Ningyang Liu

649 total citations
34 papers, 541 citations indexed

About

Ningyang Liu is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Ningyang Liu has authored 34 papers receiving a total of 541 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Condensed Matter Physics, 19 papers in Electronic, Optical and Magnetic Materials and 12 papers in Electrical and Electronic Engineering. Recurrent topics in Ningyang Liu's work include GaN-based semiconductor devices and materials (27 papers), Ga2O3 and related materials (18 papers) and ZnO doping and properties (9 papers). Ningyang Liu is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Ga2O3 and related materials (18 papers) and ZnO doping and properties (9 papers). Ningyang Liu collaborates with scholars based in China, Taiwan and United States. Ningyang Liu's co-authors include Zhitao Chen, Kang Zhang, Chenguang He, Wei Zhao, Longfei He, Hualong Wu, Xiao Hu, Lei Liu, Lei Wang and Shan Zhang and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Ningyang Liu

29 papers receiving 511 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ningyang Liu China 13 381 225 210 178 149 34 541
Yimin Chen China 15 360 0.9× 211 0.9× 231 1.1× 180 1.0× 150 1.0× 51 599
H. Namita Japan 9 592 1.6× 352 1.6× 440 2.1× 305 1.7× 87 0.6× 13 844
E. Luna Mexico 13 347 0.9× 235 1.0× 215 1.0× 321 1.8× 150 1.0× 41 580
Fabian Schuster Germany 14 258 0.7× 245 1.1× 223 1.1× 381 2.1× 170 1.1× 29 573
R. P. Reade United States 11 229 0.6× 162 0.7× 389 1.9× 309 1.7× 54 0.4× 19 704
Riyaz Abdul Khadar Switzerland 11 694 1.8× 288 1.3× 654 3.1× 167 0.9× 42 0.3× 21 854
Zhiwen Liang China 12 233 0.6× 173 0.8× 149 0.7× 296 1.7× 104 0.7× 55 477
Piero Gamarra France 15 522 1.4× 211 0.9× 470 2.2× 141 0.8× 60 0.4× 40 688
Ning Hao China 12 151 0.4× 139 0.6× 105 0.5× 433 2.4× 46 0.3× 48 638

Countries citing papers authored by Ningyang Liu

Since Specialization
Citations

This map shows the geographic impact of Ningyang Liu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ningyang Liu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ningyang Liu more than expected).

Fields of papers citing papers by Ningyang Liu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ningyang Liu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ningyang Liu. The network helps show where Ningyang Liu may publish in the future.

Co-authorship network of co-authors of Ningyang Liu

This figure shows the co-authorship network connecting the top 25 collaborators of Ningyang Liu. A scholar is included among the top collaborators of Ningyang Liu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ningyang Liu. Ningyang Liu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
An, Le, et al.. (2025). Performance of LIF neuron circuit based on threshold switching memristors. Materials Science in Semiconductor Processing. 192. 109428–109428. 1 indexed citations
2.
He, Chenguang, et al.. (2025). Optimization and mechanism for Ni/Ag/Ni ohmic contact to p-Al0.28Ga0.72N. Optics Express. 33(8). 16898–16898. 1 indexed citations
3.
Dong, Jianqi, Chenguang He, Ningyang Liu, et al.. (2025). Core-shell microdisk with InGaN/GaN quantum wells for dual-band whispering gallery mode lasing. SHILAP Revista de lepidopterología. 5(1). 100150–100150.
4.
Zhao, Jie, Huan Liu, Bin Dong, et al.. (2024). Planar Compound Eye Lens for Enhanced Light Extraction Efficiency in AlGaN‐Based Deep Ultraviolet LEDs. Advanced Photonics Research. 5(3). 1 indexed citations
5.
Jiang, Ting, et al.. (2024). Effects of Ag nano-islands and Al2O3 layer on the performance of HfO2-Based threshold switching devices. Materials Science in Semiconductor Processing. 188. 109242–109242. 2 indexed citations
6.
Zhang, Yuanyuan, et al.. (2024). Prenatal risk assessment of Xp21.1 duplication involving theDMDgene by optical genome mapping. Life Science Alliance. 7(11). e202402780–e202402780.
7.
Zhao, Jie, Huan Liu, Bin Dong, et al.. (2023). Planar Compound Eye Lens for Enhanced Light Extraction Efficiency in AlGaN‐Based Deep Ultraviolet LEDs. SHILAP Revista de lepidopterología. 5(3).
8.
Li, Chengguo, Bin Dong, Chang‐An Wang, et al.. (2022). Low etching damage surface obtained by a mixed etching method and the influence of surface states on the C–V characteristics of AlGaN/GaN Schottky barrier diodes. Materials Science in Semiconductor Processing. 147. 106667–106667. 4 indexed citations
9.
Tang, Yun, Lei Wang, Huiping Zhu, et al.. (2021). Evolution and Mechanism of P-GaN Films Under Proton Irradiation and Its Influence on Electronic Device. IEEE Transactions on Nuclear Science. 69(3). 225–231. 1 indexed citations
10.
He, Chenguang, Hualong Wu, Chuanyu Jia, et al.. (2021). Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection. Crystal Growth & Design. 21(6). 3394–3400. 14 indexed citations
11.
He, Chenguang, Wei Zhao, Hualong Wu, et al.. (2020). Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids. Journal of Physics D Applied Physics. 53(40). 405303–405303. 12 indexed citations
12.
Liu, Jiucheng, Jiantai Wang, Ningyang Liu, et al.. (2020). Wafer‐Scale Micro‐LEDs Transferred onto an Adhesive Film for Planar and Flexible Displays. Advanced Materials Technologies. 5(12). 48 indexed citations
13.
Li, Liuan, Ningyang Liu, Kang Zhang, et al.. (2020). Quasi-vertical GaN heterojunction diodes with p-NiO anodes deposited by sputtering and post-annealing. Vacuum. 182. 109784–109784. 23 indexed citations
14.
He, Longfei, Wei Zhao, Kang Zhang, et al.. (2018). Performance enhancement of AlGaN-based 365  nm ultraviolet light-emitting diodes with a band-engineering last quantum barrier. Optics Letters. 43(3). 515–515. 29 indexed citations
15.
He, Chenguang, Wei Zhao, Hualong Wu, et al.. (2018). High-Quality AlN Film Grown on Sputtered AlN/Sapphire via Growth-Mode Modification. Crystal Growth & Design. 18(11). 6816–6823. 49 indexed citations
16.
Wang, Lei, Ningyang Liu, Bo Li, et al.. (2018). Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes. IEEE Transactions on Nuclear Science. 65(11). 2784–2792. 12 indexed citations
17.
He, Chenguang, Wei Zhao, Kang Zhang, et al.. (2017). High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates. ACS Applied Materials & Interfaces. 9(49). 43386–43392. 36 indexed citations
18.
Yang, Wei, Li Ding, Ningyang Liu, et al.. (2012). Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes. Applied Physics Letters. 100(3). 51 indexed citations
19.
Wang, Lei, Lei Liu, Ningyang Liu, et al.. (2011). Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes. Optics Express. 19(15). 14182–14182. 54 indexed citations
20.
Wang, Lei, Rui Li, Ding Li, et al.. (2010). Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer. Applied Physics Letters. 96(6). 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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