Yong-Tae Moon

785 total citations
33 papers, 665 citations indexed

About

Yong-Tae Moon is a scholar working on Condensed Matter Physics, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Yong-Tae Moon has authored 33 papers receiving a total of 665 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Condensed Matter Physics, 15 papers in Materials Chemistry and 13 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Yong-Tae Moon's work include GaN-based semiconductor devices and materials (33 papers), ZnO doping and properties (14 papers) and Semiconductor Quantum Structures and Devices (13 papers). Yong-Tae Moon is often cited by papers focused on GaN-based semiconductor devices and materials (33 papers), ZnO doping and properties (14 papers) and Semiconductor Quantum Structures and Devices (13 papers). Yong-Tae Moon collaborates with scholars based in South Korea, Japan and United States. Yong-Tae Moon's co-authors include Seong-Ju Park, Dong-Joon Kim, Jeong-Tak Oh, Hwan-Hee Jeong, Tae‐Yeon Seong, Sang-Youl Lee, Sung Soo Park, Hiroshi Amano, Joon Seop Kwak and Jong‐In Shim and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Yong-Tae Moon

33 papers receiving 632 citations

Peers

Yong-Tae Moon
Jeomoh Kim United States
Hongpo Hu China
Ryan Ley United States
Shun Washiyama United States
A. Rice United States
K. Hazu Japan
Andrew Klump United States
Yong-Tae Moon
Citations per year, relative to Yong-Tae Moon Yong-Tae Moon (= 1×) peers Takao Kosugi

Countries citing papers authored by Yong-Tae Moon

Since Specialization
Citations

This map shows the geographic impact of Yong-Tae Moon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yong-Tae Moon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yong-Tae Moon more than expected).

Fields of papers citing papers by Yong-Tae Moon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yong-Tae Moon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yong-Tae Moon. The network helps show where Yong-Tae Moon may publish in the future.

Co-authorship network of co-authors of Yong-Tae Moon

This figure shows the co-authorship network connecting the top 25 collaborators of Yong-Tae Moon. A scholar is included among the top collaborators of Yong-Tae Moon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yong-Tae Moon. Yong-Tae Moon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Min‐Sung, Sunghan Choi, Young Hoon Kim, et al.. (2019). Light extraction enhancement of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes by using highly reflective ITO/Al electrode and surface roughening. Optics Express. 27(21). 29930–29930. 53 indexed citations
2.
Choi, Sunghan, et al.. (2019). Enhancing the light extraction of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes with an internal reflector. Applied Physics Express. 12(12). 122011–122011. 8 indexed citations
3.
Moon, Yong-Tae, et al.. (2015). Light interaction in sapphire/MgF2/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes. Scientific Reports. 5(1). 9717–9717. 14 indexed citations
5.
Moon, Yong-Tae, et al.. (2014). High Efficiency and ESD of GaN-Based LEDs With Patterned Ion-Damaged Current Blocking Layer. IEEE Photonics Technology Letters. 27(2). 149–152. 9 indexed citations
7.
Shin, Dong‐Soo, et al.. (2013). Investigation of Quantum-Well Shapes and Their Impacts on the Performance of InGaN/GaN Light-Emitting Diodes. Japanese Journal of Applied Physics. 52(8S). 08JL11–08JL11. 2 indexed citations
8.
Park, Seoung-Hwan & Yong-Tae Moon. (2013). Temperature characteristics of spontaneous emission and optical gain in blue InGaN/GaN quantum well structures. Journal of Applied Physics. 114(8). 8 indexed citations
9.
Park, Seoung-Hwan, et al.. (2012). High-efficiency InGaN/GaN light-emitting diodes with electron injector. Semiconductor Science and Technology. 27(11). 115003–115003. 6 indexed citations
10.
Park, Seoung-Hwan, et al.. (2012). Comparison of light emission in InGaN/GaN light-emitting diodes with graded, triangular, and parabolic quantum-well structures. Journal of the Korean Physical Society. 60(3). 505–508. 7 indexed citations
11.
Park, Seoung-Hwan, et al.. (2011). Light emission enhancement in blue InGaAlN/InGaN quantum well structures. Applied Physics Letters. 99(18). 30 indexed citations
12.
Park, Seoung-Hwan, et al.. (2011). Optical Gain Analysis of Graded InGaN/GaN Quantum-Well Lasers. Chinese Physics Letters. 28(7). 78503–78503. 4 indexed citations
13.
Kim, Bong-Hwan, et al.. (2010). Effect of In Composition on Two-Dimensional Electron Gas in Wurtzite AlGaN/InGaN Heterostructures. Chinese Physics Letters. 27(11). 118501–118501. 5 indexed citations
14.
Park, Seoung-Hwan, et al.. (2010). Enhancement of light power for strain-compensated hybrid InGaN/InGaN/MgZnO light-emitting diodes. Applied Physics Letters. 97(12). 2 indexed citations
15.
Moon, Yong-Tae, et al.. (2008). Improvement in the optical and structural properties of InGaN/GaN multiple quantum wells by indium predeposition. Journal of Physics D Applied Physics. 41(16). 165103–165103. 5 indexed citations
17.
Kim, Dong-Joon, et al.. (2003). Effects of KrF (248 nm) excimer laser irradiation on electrical and optical properties of GaN:Mg. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(2). 641–644. 8 indexed citations
18.
Moon, Yong-Tae, Dong-Joon Kim, Jeong-Tak Oh, et al.. (2001). Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots. Applied Physics Letters. 79(5). 599–601. 58 indexed citations
19.
Kim, Dong-Joon, et al.. (2001). Characteristics of GaN grown by metalorganic chemical vapor deposition using trimethylgallium and triethylgallium. Journal of Crystal Growth. 233(3). 439–445. 15 indexed citations
20.
Kim, Dong-Joon, et al.. (2001). Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD. Journal of Electronic Materials. 30(2). 99–102. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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