Patrick Fay

9.0k total citations
323 papers, 5.8k citations indexed

About

Patrick Fay is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Patrick Fay has authored 323 papers receiving a total of 5.8k indexed citations (citations by other indexed papers that have themselves been cited), including 285 papers in Electrical and Electronic Engineering, 114 papers in Atomic and Molecular Physics, and Optics and 107 papers in Condensed Matter Physics. Recurrent topics in Patrick Fay's work include GaN-based semiconductor devices and materials (106 papers), Semiconductor Quantum Structures and Devices (92 papers) and Semiconductor materials and devices (92 papers). Patrick Fay is often cited by papers focused on GaN-based semiconductor devices and materials (106 papers), Semiconductor Quantum Structures and Devices (92 papers) and Semiconductor materials and devices (92 papers). Patrick Fay collaborates with scholars based in United States, Chile and France. Patrick Fay's co-authors include Huili Grace Xing, Debdeep Jena, Xiang Gao, I. Adesida, Gregory L. Snider, Ronghua Wang, Shiping Guo, Yu Cao, Alan Seabaugh and Gary H. Bernstein and has published in prestigious journals such as Physical Review Letters, Nature Communications and SHILAP Revista de lepidopterología.

In The Last Decade

Patrick Fay

311 papers receiving 5.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Patrick Fay United States 39 4.5k 2.9k 1.7k 1.4k 962 323 5.8k
Christophe Gaquière France 33 3.1k 0.7× 2.7k 0.9× 1.4k 0.8× 802 0.6× 493 0.5× 276 3.9k
M. E. Levinshteĭn Russia 28 3.7k 0.8× 1.6k 0.6× 1.9k 1.1× 568 0.4× 571 0.6× 230 4.9k
Berardi Sensale‐Rodriguez United States 30 2.1k 0.5× 591 0.2× 1.2k 0.7× 1.9k 1.3× 1.5k 1.5× 114 3.8k
L. Faraone Australia 32 4.7k 1.0× 769 0.3× 2.6k 1.5× 706 0.5× 947 1.0× 426 5.9k
W. Knap France 52 7.6k 1.7× 2.1k 0.7× 6.1k 3.5× 1.1k 0.8× 2.3k 2.4× 399 10.7k
A.M. Campbell United Kingdom 32 965 0.2× 3.6k 1.3× 976 0.6× 1.3k 0.9× 1.5k 1.6× 144 4.1k
M. R. Melloch United States 43 6.4k 1.4× 807 0.3× 4.9k 2.8× 451 0.3× 731 0.8× 297 7.9k
D. S. Katzer United States 40 3.6k 0.8× 2.0k 0.7× 5.7k 3.3× 966 0.7× 1.3k 1.4× 226 8.4k
A. Levy Yeyati Spain 44 2.0k 0.4× 2.7k 0.9× 5.7k 3.3× 409 0.3× 496 0.5× 162 6.5k
Michael J. Uren United Kingdom 48 7.3k 1.6× 4.9k 1.7× 2.2k 1.3× 1.6k 1.1× 1.1k 1.1× 291 9.1k

Countries citing papers authored by Patrick Fay

Since Specialization
Citations

This map shows the geographic impact of Patrick Fay's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Patrick Fay with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Patrick Fay more than expected).

Fields of papers citing papers by Patrick Fay

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Patrick Fay. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Patrick Fay. The network helps show where Patrick Fay may publish in the future.

Co-authorship network of co-authors of Patrick Fay

This figure shows the co-authorship network connecting the top 25 collaborators of Patrick Fay. A scholar is included among the top collaborators of Patrick Fay based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Patrick Fay. Patrick Fay is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Xie, Jiacheng, et al.. (2025). Towards terahertz nanomechanics. Nature Communications. 16(1). 8549–8549. 1 indexed citations
2.
Li, Peizhao, et al.. (2025). Integrated Broadband THz Switching Using Photoconductivity Modulation in Si-on-Sapphire Substrates. IEEE Transactions on Terahertz Science and Technology. 15(3). 536–540. 1 indexed citations
3.
Li, Lei, et al.. (2025). A D-Band 24-dBm MMIC Amplifier by Innovative Power Combining of GaN HEMTs in a SiC SIW. IEEE Transactions on Microwave Theory and Techniques. 73(8). 4929–4936. 1 indexed citations
4.
Moon, Jeong‐Sun, et al.. (2024). Polarization‐Graded High‐Electron‐Mobility Transistors for Improved Johnson's Figure of Merit. physica status solidi (a). 221(21).
5.
Li, Lei, et al.. (2024). AD-band Traveling-Wave Amplifier by Embedding GaN HEMTs as Current Probes in a SiC SIW. 686–689. 3 indexed citations
6.
Wang, Xiaopeng, et al.. (2024). Low-Loss D-Band SIW Power Divider for Integrated Systems. 255–256.
7.
Li, Lei, et al.. (2023). Extraordinary permittivity characterization of 4H SiC at millimeter-wave frequencies. Applied Physics Letters. 123(1). 6 indexed citations
8.
Zhang, Zexuan, Jimy Encomendero, Kazuki Nomoto, et al.. (2023). N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates. Applied Physics Letters. 122(9). 26 indexed citations
9.
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11.
Moon, Jeong‐Sun, Joel Wong, Erdem Arkun, et al.. (2022). W-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz. IEEE Microwave and Wireless Technology Letters. 33(2). 161–164. 36 indexed citations
12.
Wu, Chunlei, et al.. (2022). Ferroelectric-Gated GaN HEMTs for RF and mm-Wave Switch Applications. 1–2. 6 indexed citations
13.
Chakraborty, Wriddhi, Matthew San Jose, Jorge Gómez, et al.. (2021). Higher-k Zirconium Doped Hafnium Oxide (HZO) Trigate Transistors with Higher DC and RF Performance and Improved Reliability. Symposium on VLSI Technology. 1–2. 1 indexed citations
14.
Chakraborty, Wriddhi, et al.. (2021). Cryogenic RF CMOS on 22nm FDSOI Platform with Record f T =495GHz and f MAX =497GHz. Symposium on VLSI Technology. 1–2. 5 indexed citations
15.
Fay, Patrick, et al.. (2019). Determining Electromagnetic Exposure Compliance of Multi-Antenna Devices in Linear Time. IEEE Transactions on Antennas and Propagation. 67(12). 7585–7596. 6 indexed citations
16.
Ren, Jun, Zhenguo Jiang, Patrick Fay, et al.. (2018). High-Performance WR-4.3 Optically Controlled Variable Attenuator With 60-dB Range. IEEE Microwave and Wireless Components Letters. 28(6). 512–514. 21 indexed citations
17.
Ameen, Tarek A., Hesameddin Ilatikhameneh, Patrick Fay, et al.. (2018). Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs. IEEE Transactions on Electron Devices. 66(1). 736–742. 15 indexed citations
18.
Wang, Jingshan, Robert McCarthy, C. Youtsey, et al.. (2018). Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates. physica status solidi (a). 216(4). 4 indexed citations
19.
Jiang, Zhenguo, et al.. (2017). A G-Band Monolithically Integrated Quasi-Optical Zero-Bias Detector Based on Heterostructure Backward Diodes Using Submicrometer Airbridges. IEEE Transactions on Microwave Theory and Techniques. 66(4). 2010–2017. 15 indexed citations
20.
Cao, Yu, X. Li, T.H. Kosel, et al.. (2004). Electrical properties of inalp native oxides for metal-oxide-semiconductor device \napplications. eScholarship (California Digital Library). 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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