Yinhe Wu

412 total citations
20 papers, 309 citations indexed

About

Yinhe Wu is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Yinhe Wu has authored 20 papers receiving a total of 309 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Condensed Matter Physics, 13 papers in Electrical and Electronic Engineering and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Yinhe Wu's work include GaN-based semiconductor devices and materials (17 papers), Semiconductor materials and devices (9 papers) and Ga2O3 and related materials (8 papers). Yinhe Wu is often cited by papers focused on GaN-based semiconductor devices and materials (17 papers), Semiconductor materials and devices (9 papers) and Ga2O3 and related materials (8 papers). Yinhe Wu collaborates with scholars based in China, Macao and United States. Yinhe Wu's co-authors include G. A. Lodoen, A. Hiltner, C. Sellitti, C. R. Payet, J. M. Anderson, Jincheng Zhang, Shenglei Zhao, Weihang Zhang, Yue Hao and Yue Hao and has published in prestigious journals such as Journal of Alloys and Compounds, IEEE Transactions on Electron Devices and Journal of Applied Polymer Science.

In The Last Decade

Yinhe Wu

15 papers receiving 294 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yinhe Wu China 10 166 148 88 57 53 20 309
Hiroyuki Sakurai Japan 13 92 0.6× 168 1.1× 121 1.4× 9 0.2× 172 3.2× 36 394
Guohua Wang China 8 83 0.5× 61 0.4× 194 2.2× 48 0.8× 99 1.9× 24 304
Maxim A. Visotin Russia 11 22 0.1× 162 1.1× 103 1.2× 23 0.4× 265 5.0× 28 381
Yi-Chun Lai Taiwan 10 46 0.3× 210 1.4× 55 0.6× 37 0.6× 138 2.6× 18 372
Piu Rajak Italy 9 38 0.2× 78 0.5× 134 1.5× 9 0.2× 167 3.2× 29 290
Włodzimierz Strupiński Poland 8 74 0.4× 144 1.0× 48 0.5× 21 0.4× 157 3.0× 24 320
Jiangshan Zheng China 13 114 0.7× 208 1.4× 161 1.8× 30 0.5× 554 10.5× 21 659
Wittawat Saenrang Thailand 11 24 0.1× 90 0.6× 180 2.0× 12 0.2× 169 3.2× 33 301
Xue Hou China 11 65 0.4× 79 0.5× 184 2.1× 21 0.4× 252 4.8× 21 442
A. Mallick India 13 68 0.4× 95 0.6× 342 3.9× 20 0.4× 313 5.9× 32 504

Countries citing papers authored by Yinhe Wu

Since Specialization
Citations

This map shows the geographic impact of Yinhe Wu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yinhe Wu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yinhe Wu more than expected).

Fields of papers citing papers by Yinhe Wu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yinhe Wu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yinhe Wu. The network helps show where Yinhe Wu may publish in the future.

Co-authorship network of co-authors of Yinhe Wu

This figure shows the co-authorship network connecting the top 25 collaborators of Yinhe Wu. A scholar is included among the top collaborators of Yinhe Wu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yinhe Wu. Yinhe Wu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhang, Weihang, Yachao Zhang, Yinhe Wu, et al.. (2025). 1.27 GW/cm² Reverse Blocking E-Mode GaN-Si(100) Monolithic Heterogeneous Integration Cascode Switch With Ultralow Turn-On Voltage and Dynamic RON. IEEE Electron Device Letters. 46(5). 805–808.
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Wang, Zhongxu, et al.. (2023). Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors. Micromachines. 15(1). 80–80. 5 indexed citations
6.
Song, Xiufeng, Jincheng Zhang, Yinhe Wu, et al.. (2023). 60Co gamma irradiation effects on GaN quasi-vertical Schottky barrier diodes with passivation layer and their post-irradiation annealing behavior. Applied Physics Express. 16(4). 46001–46001. 1 indexed citations
7.
Wu, Yinhe, Jincheng Zhang, Shenglei Zhao, et al.. (2023). Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V. IEEE Transactions on Electron Devices. 70(2). 424–428. 28 indexed citations
8.
Wu, Yinhe, Jincheng Zhang, Shenglei Zhao, et al.. (2022). Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs. Science China Information Sciences. 65(8). 9 indexed citations
9.
Zhang, Jincheng, Shenglei Zhao, Lei Shu, et al.. (2022). Simulation Research on Single Event Burnout Performances of p-GaN Gate HEMTs With 2DEG Al x Ga1-x N Channel. IEEE Transactions on Electron Devices. 69(3). 973–980. 30 indexed citations
10.
Duan, Chao, Bo Mei, Zhongxu Wang, et al.. (2021). Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate. Science China Information Sciences. 65(2). 2 indexed citations
11.
Zhang, Weihang, Jincheng Zhang, Xiufeng Song, et al.. (2021). AlN/GaN Superlattice Channel HEMTs on Silicon Substrate. IEEE Transactions on Electron Devices. 68(7). 3296–3301. 21 indexed citations
12.
Wu, Yinhe, Weihang Zhang, Jincheng Zhang, et al.. (2021). Au-Free Al₀.₄Ga₀.₆N/Al₀.₁Ga₀.₉N HEMTs on Silicon Substrate With High Reverse Blocking Voltage of 2 kV. IEEE Transactions on Electron Devices. 68(9). 4543–4549. 8 indexed citations
13.
Chen, Jiabo, Zhaoke Bian, Dan Zhu, et al.. (2020). Effects of thermal annealing on the electrical and structural properties of Mo/Au schottky contacts on n-GaN. Journal of Alloys and Compounds. 853. 156978–156978. 13 indexed citations
14.
Chen, Jiabo, Zhaoke Bian, Zhihong Liu, et al.. (2019). High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment. Semiconductor Science and Technology. 34(11). 115019–115019. 16 indexed citations
15.
Zhou, Chao, Yueshi Guan, Chuan He, et al.. (2019). On-Chip Gate ESD Protection for AlGaN/GaN E-Mode Power HEMT Delivering >2kV HBM ESD Capability. 175–176. 9 indexed citations
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Wu, Yinhe, Jincheng Zhang, Shenglei Zhao, et al.. (2019). More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With >230 MW/cm2 Power Figure-of-Merit. IEEE Electron Device Letters. 40(11). 1724–1727. 35 indexed citations
18.
Hou, Xiaohui, Xuefeng Zheng, Haoyu Wen, et al.. (2016). Distribution of electron traps in SiO 2 /HfO 2 nMOSFET. Chinese Physics B. 25(5). 57702–57702. 1 indexed citations
19.
Deissler, Robert J., M. Martens, Yinhe Wu, & Robert W. Brown. (2013). Brownian and Néel relaxation times in magnetic particle dynamics. 1–1. 6 indexed citations
20.
Wu, Yinhe, C. Sellitti, J. M. Anderson, et al.. (1992). An FTIR–ATR investigation of in vivo poly(ether urethane) degradation. Journal of Applied Polymer Science. 46(2). 201–211. 112 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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