Andrew Klump

742 total citations
31 papers, 592 citations indexed

About

Andrew Klump is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Andrew Klump has authored 31 papers receiving a total of 592 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Condensed Matter Physics, 23 papers in Electrical and Electronic Engineering and 19 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Andrew Klump's work include GaN-based semiconductor devices and materials (29 papers), Semiconductor materials and devices (21 papers) and Ga2O3 and related materials (17 papers). Andrew Klump is often cited by papers focused on GaN-based semiconductor devices and materials (29 papers), Semiconductor materials and devices (21 papers) and Ga2O3 and related materials (17 papers). Andrew Klump collaborates with scholars based in United States, Germany and Japan. Andrew Klump's co-authors include Zlatko Sitar, Ramón Collazo, Ronny Kirste, Pramod Reddy, Seiji Mita, James Tweedie, Biplab Sarkar, Felix Kaess, Shun Washiyama and Qiang Guo and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Andrew Klump

30 papers receiving 580 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Andrew Klump United States 15 462 341 274 201 126 31 592
Hanling Long China 16 392 0.8× 258 0.8× 179 0.7× 280 1.4× 157 1.2× 38 556
Jeomoh Kim United States 14 519 1.1× 266 0.8× 216 0.8× 245 1.2× 206 1.6× 27 690
J. T. Hsu Taiwan 10 370 0.8× 294 0.9× 193 0.7× 338 1.7× 87 0.7× 18 585
K. Hazu Japan 15 550 1.2× 376 1.1× 258 0.9× 318 1.6× 167 1.3× 48 724
Takao Oto Japan 11 374 0.8× 180 0.5× 153 0.6× 201 1.0× 179 1.4× 27 481
Reet Chaudhuri United States 13 515 1.1× 259 0.8× 381 1.4× 171 0.9× 159 1.3× 25 641
Jiangnan Dai China 17 601 1.3× 411 1.2× 181 0.7× 286 1.4× 257 2.0× 41 689
Hongpo Hu China 12 531 1.1× 297 0.9× 194 0.7× 306 1.5× 212 1.7× 18 655
Ralph Rothemund United States 10 238 0.5× 136 0.4× 221 0.8× 262 1.3× 302 2.4× 16 523

Countries citing papers authored by Andrew Klump

Since Specialization
Citations

This map shows the geographic impact of Andrew Klump's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Andrew Klump with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Andrew Klump more than expected).

Fields of papers citing papers by Andrew Klump

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Andrew Klump. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Andrew Klump. The network helps show where Andrew Klump may publish in the future.

Co-authorship network of co-authors of Andrew Klump

This figure shows the co-authorship network connecting the top 25 collaborators of Andrew Klump. A scholar is included among the top collaborators of Andrew Klump based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Andrew Klump. Andrew Klump is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Klump, Andrew, C. Hartmann, Matthias Bickermann, & Thomas L. Straubinger. (2024). Prediction of impurity concentrations in AlN single crystals by absorption at 230 nm using random forest regression. CrystEngComm. 27(2). 184–190.
2.
Hartmann, C., Carsten Richter, Andrew Klump, et al.. (2023). Efficient diameter enlargement of bulk AlN single crystals with high structural quality. Applied Physics Express. 16(7). 75502–75502. 11 indexed citations
3.
Straubinger, Thomas L., C. Hartmann, M. Albrecht, et al.. (2023). Dislocation Climb in AlN Crystals Grown at Low-Temperature Gradients Revealed by 3D X-ray Diffraction Imaging. Crystal Growth & Design. 23(3). 1538–1546. 5 indexed citations
4.
Miller, W., Tobias Schulz, L. Lymperakis, Andrew Klump, & M. Albrecht. (2023). Kinetic Monte Carlo simulations for AlN and AlGaN epitaxial growth on AlN. Journal of Crystal Growth. 607. 127125–127125. 2 indexed citations
5.
Bagheri, Pegah, Andrew Klump, Shun Washiyama, et al.. (2022). Doping and compensation in heavily Mg doped Al-rich AlGaN films. Applied Physics Letters. 120(8). 24 indexed citations
6.
Bagheri, Pegah, Shun Washiyama, Andrew Klump, et al.. (2021). Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies. Applied Physics Letters. 119(2). 1 indexed citations
7.
Bagheri, Pegah, Pramod Reddy, Seiji Mita, et al.. (2021). On the Ge shallow-to-deep level transition in Al-rich AlGaN. Journal of Applied Physics. 130(5). 7 indexed citations
8.
Bagheri, Pegah, Shun Washiyama, Pramod Reddy, et al.. (2021). A pathway to highly conducting Ge-doped AlGaN. Journal of Applied Physics. 130(20). 5 indexed citations
9.
Washiyama, Shun, Pegah Bagheri, Jonathon N. Baker, et al.. (2021). Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping. Applied Physics Letters. 118(4). 18 indexed citations
10.
Bagheri, Pegah, Andrew Klump, Dolar Khachariya, et al.. (2021). On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters. Semiconductor Science and Technology. 37(1). 15003–15003. 7 indexed citations
11.
Washiyama, Shun, Pramod Reddy, Biplab Sarkar, et al.. (2020). The role of chemical potential in compensation control in Si:AlGaN. Journal of Applied Physics. 127(10). 43 indexed citations
12.
Reddy, Pramod, M. Hayden Breckenridge, Qiang Guo, et al.. (2020). High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates. Applied Physics Letters. 116(8). 41 indexed citations
13.
Breckenridge, M. Hayden, Qiang Guo, Andrew Klump, et al.. (2020). Shallow Si donor in ion-implanted homoepitaxial AlN. Applied Physics Letters. 116(17). 28 indexed citations
14.
Klump, Andrew, Marc P. Hoffmann, Felix Kaess, et al.. (2020). Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control. Journal of Applied Physics. 127(4). 24 indexed citations
15.
Kelley, Kyle P., Evan L. Runnerstrom, Edward Sachet, et al.. (2019). Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials. ACS Photonics. 6(5). 1139–1145. 39 indexed citations
16.
Guo, Qiang, Ronny Kirste, Seiji Mita, et al.. (2019). Design of AlGaN-based quantum structures for low threshold UVC lasers. Journal of Applied Physics. 126(22). 22 indexed citations
17.
Sarkar, Biplab, Qiang Guo, Andrew Klump, et al.. (2018). The influence of point defects on the thermal conductivity of AlN crystals. Journal of Applied Physics. 123(18). 31 indexed citations
18.
Sarkar, Biplab, Shun Washiyama, M. Hayden Breckenridge, et al.. (2018). N- and P- type Doping in Al-rich AlGaN and AlN. ECS Meeting Abstracts. MA2018-02(38). 1283–1283. 2 indexed citations
19.
Kaess, Felix, Pramod Reddy, Andrew Klump, et al.. (2016). The effect of illumination power density on carbon defect configuration in silicon doped GaN. Journal of Applied Physics. 120(23). 18 indexed citations
20.
Kaess, Felix, Seiji Mita, Pramod Reddy, et al.. (2016). Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition. Journal of Applied Physics. 120(10). 71 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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