Masanobu Hiroki

762 total citations
53 papers, 651 citations indexed

About

Masanobu Hiroki is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Masanobu Hiroki has authored 53 papers receiving a total of 651 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Condensed Matter Physics, 31 papers in Electronic, Optical and Magnetic Materials and 29 papers in Electrical and Electronic Engineering. Recurrent topics in Masanobu Hiroki's work include GaN-based semiconductor devices and materials (51 papers), Ga2O3 and related materials (31 papers) and Semiconductor materials and devices (19 papers). Masanobu Hiroki is often cited by papers focused on GaN-based semiconductor devices and materials (51 papers), Ga2O3 and related materials (31 papers) and Semiconductor materials and devices (19 papers). Masanobu Hiroki collaborates with scholars based in Japan and United States. Masanobu Hiroki's co-authors include Kazuhide Kumakura, Narihiko Maeda, Takashi Kobayashi, Toshiki Makimōto, Hideki Yamamoto, Naoteru Shigekawa, Haruki Yokoyama, Masamichi Akazawa, Tamotsu Hashizume and S. Yamahata and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

Masanobu Hiroki

50 papers receiving 625 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Masanobu Hiroki Japan	14	579	326	316	226	117	53	651
K. M. Tracy United States	10	490 0.8×	363 1.1×	322 1.0×	217 1.0×	134 1.1×	11	632
Yong-Tae Moon South Korea	14	576 1.0×	226 0.7×	267 0.8×	316 1.4×	173 1.5×	33	665
Soojeong Choi United States	14	376 0.6×	230 0.7×	293 0.9×	298 1.3×	121 1.0×	29	569
Benjamin Neuschl Germany	16	612 1.1×	290 0.9×	355 1.1×	308 1.4×	169 1.4×	37	752
Youssef El Gmili France	16	556 1.0×	252 0.8×	288 0.9×	467 2.1×	121 1.0×	36	803
Tanya Paskova United States	14	580 1.0×	225 0.7×	278 0.9×	284 1.3×	189 1.6×	25	640
E. Richter Germany	17	724 1.3×	418 1.3×	456 1.4×	445 2.0×	228 1.9×	69	919
Jin‐Kuo Ho Taiwan	6	475 0.8×	286 0.9×	251 0.8×	212 0.9×	130 1.1×	9	562
K. Y. Zang Singapore	15	369 0.6×	200 0.6×	214 0.7×	268 1.2×	78 0.7×	38	498
K.P. Lee United States	8	505 0.9×	462 1.4×	209 0.7×	198 0.9×	198 1.7×	17	652

Countries citing papers authored by Masanobu Hiroki

Since Specialization

Citations

This map shows the geographic impact of Masanobu Hiroki's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Masanobu Hiroki with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Masanobu Hiroki more than expected).

Fields of papers citing papers by Masanobu Hiroki

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Masanobu Hiroki. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Masanobu Hiroki. The network helps show where Masanobu Hiroki may publish in the future.

Co-authorship network of co-authors of Masanobu Hiroki

This figure shows the co-authorship network connecting the top 25 collaborators of Masanobu Hiroki. A scholar is included among the top collaborators of Masanobu Hiroki based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Masanobu Hiroki. Masanobu Hiroki is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Hiroki, Masanobu, Kazuyuki Hirama, Kazuhide Kumakura, & Yoshitaka Taniyasu. (2025). AlN-based polarization-doped field-effect transistors with downward-graded AlGaN underlayers. Applied Physics Letters. 126(20).

Hiroki, Masanobu, et al.. (2024). Effects of Thermal Annealing on V‐Based Ohmic Contacts on n‐Type AlGaN with High Al Content. physica status solidi (a). 221(21). 2 indexed citations

Hiroki, Masanobu, Yoshitaka Taniyasu, & Kazuhide Kumakura. (2022). High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers. IEEE Electron Device Letters. 43(3). 350–353. 40 indexed citations

Hiroki, Masanobu & Kazuhide Kumakura. (2019). Ohmic contact to AlN:Si using graded AlGaN contact layer. Applied Physics Letters. 115(19). 22 indexed citations

Hiroki, Masanobu, Kazuhide Kumakura, & Hideki Yamamoto. (2016). Substrate-transfer Technique Using h-BN for GaN-based High-power Transistors. NTT technical review. 14(8). 44–49. 1 indexed citations

Hiroki, Masanobu, Kazuhide Kumakura, & Hideki Yamamoto. (2016). Enhancement of performance of AlGaN/GaN high-electron-mobility transistors by transfer from sapphire to a copper plate. Japanese Journal of Applied Physics. 55(5S). 05FH07–05FH07. 9 indexed citations

Hiroki, Masanobu, Kazuhide Kumakura, Yasuyuki Kobayashi, et al.. (2014). Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN. Applied Physics Letters. 105(19). 63 indexed citations

Maeda, Narihiko, Masanobu Hiroki, Satoshi Sasaki, & Y. Harada. (2013). High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures. Japanese Journal of Applied Physics. 52(8S). 08JN18–08JN18. 3 indexed citations

Hiroki, Masanobu, Yasuhiro Oda, Noriyuki Watanabe, et al.. (2013). Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors. Journal of Crystal Growth. 382. 36–40. 37 indexed citations

10.

Akazawa, Masamichi, Bo Gao, Tamotsu Hashizume, et al.. (2011). Investigation of polarization‐induced electric field in ultrathin InAlN layers on GaN by X‐ray photoelectron spectroscopy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2139–2141. 3 indexed citations

11.

Akazawa, Masamichi, Bo Gao, Tamotsu Hashizume, et al.. (2011). Optimization of AlGaN‐based spacer layer for InAlN/GaN interfaces. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(3-4). 592–595. 1 indexed citations

12.

Akazawa, Masamichi, Bo Gao, Tamotsu Hashizume, et al.. (2011). Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy. Journal of Applied Physics. 109(1). 55 indexed citations

13.

Hiroki, Masanobu, et al.. (2010). 再成長AlGaN接触層をもつ圧縮歪みを加えたIn x Al 1-x N/Al 0.22 Ga 0.78 N/GaN(x=0.245~0.325)ヘテロ構造. Japanese Journal of Applied Physics. 49. 1–4. 1 indexed citations

14.

Hiroki, Masanobu, Narihiko Maeda, & Naoteru Shigekawa. (2010). Compressively Strained In_xAl_1-xN/Al_0.22Ga_0.78N/GaN (x = 0.245–0.325) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers. Japanese Journal of Applied Physics. 49(4S). 04DF13–04DF13. 5 indexed citations

15.

Maeda, Narihiko, Masanobu Hiroki, Noriyuki Watanabe, et al.. (2007). Analysis of electrical properties of insulators (Si₃N₄, SiO₂, AlN, and Al₂O₃)/0.5 nm Si₃N₄/AlGaN/GaN heterostructures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(7). 2712–2715. 4 indexed citations

16.

Shiojima, Kenji, Takashi Maruyama, Tetsuya Suemitsu, et al.. (2006). Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short‐gate HEMTs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 2360–2363. 4 indexed citations

17.

Maeda, Noritoshi, et al.. (2006). High temperature characteristics of doped channel AlGaN/GaN MIS‐HFETs with thin AlGaN barrier layer. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 2317–2320. 4 indexed citations

18.

Hiroki, Masanobu, Hideaki Yokoyama, N. Watanabe, & Takashi Kobayashi. (2006). High-quality InAlN/GaN heterostructures grown by metal–organic vapor phase epitaxy. Superlattices and Microstructures. 40(4-6). 214–218. 14 indexed citations

19.

Maeda, Narihiko, Chengxin Wang, Masanobu Hiroki, et al.. (2005). Al₂O₃/Si₃N₄ Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure: Low Gate Leakage Current with High Transconductance. Japanese Journal of Applied Physics. 44(4S). 2747–2747. 8 indexed citations

20.

Wang, Chengxin, Narihiko Maeda, Masanobu Hiroki, et al.. (2004). Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al2O3/Si3N4 bilayer and with Si3N4 single layer.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact