Sanyam Bajaj

1.5k citations

23 papers · 1.2k indexed · h-index 16

Electronic, Optical and Magnetic Materials top 2%
Condensed Matter Physics top 2%
Materials Chemistry top 10%
Electrical and Electronic Engineering top 10%
Renewable Energy, Sustainability and the Environment top 10%

Co-authors: Siddharth Rajan Sriram Krishnamoorthy Yuewei Zhang Zhanbo Xia Mark Brenner Fatih Akyol Chandan Joishi Ting-Hsiang Hung
Topics: GaN-based semiconductor devices and materials (20 papers)Ga2O3 and related materials (15 papers)Semiconductor materials and devices (9 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Renewable Energy, Sustainability and the Environment
Journals: Applied Physics Letters IEEE Transactions on Electron Devices Japanese Journal of Applied Physics
Partner nations: United States India

In The Last Decade

Sanyam Bajaj

23 papers receiving 1.2k citations

Peers

Countries citing papers authored by Sanyam Bajaj

Since Specialization

Citations

This map shows the geographic impact of Sanyam Bajaj's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sanyam Bajaj with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sanyam Bajaj more than expected).

Fields of papers citing papers by Sanyam Bajaj

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sanyam Bajaj. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sanyam Bajaj. The network helps show where Sanyam Bajaj may publish in the future.

Co-authorship network of co-authors of Sanyam Bajaj

This figure shows the co-authorship network connecting the top 25 collaborators of Sanyam Bajaj. A scholar is included among the top collaborators of Sanyam Bajaj based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Sanyam Bajaj. Sanyam Bajaj is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Al_0.7Ga_0.3N MESFET With All-Refractory Metal Process for High Temperature Operation 2021 ·IEEE Transactions on Electron Devices ·(unknown),Sanyam Bajaj,David R. Daughton,Andrew A. Allerman,Andrew Armstrong,Towhidur Razzak,Shahadat H. Sohel,Siddharth Rajan	8
2	Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors 2020 ·Applied Physics Express ·Shahadat H. Sohel,Andy Xie,Edward Beam,Hao Xue,Towhidur Razzak,Sanyam Bajaj,(unknown),(unknown),(unknown),Yu Cao,Wu Lu,Siddharth Rajan	11
3	BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm 2020 ·Applied Physics Letters ·Towhidur Razzak,Hareesh Chandrasekar,Kamal Hussain,Choong Hee Lee,Abdullah Mamun,Hao Xue,Zhanbo Xia,Shahadat H. Sohel,Mohammad Wahidur Rahman,Sanyam Bajaj,Caiyu Wang,Wu Lu,Asif Khan,Siddharth Rajan	20
4	Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiN_x Passivation 2019 ·IEEE Electron Device Letters ·Shahadat H. Sohel,Mohammad Wahidur Rahman,Andy Xie,Edward Beam,(unknown),(unknown),Hao Xue,Towhidur Razzak,Sanyam Bajaj,Yu Cao,Wu Lu,Siddharth Rajan	47
5	Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications 2019 ·IEEE Electron Device Letters ·Shahadat H. Sohel,Andy Xie,Edward Beam,Hao Xue,Towhidur Razzak,Sanyam Bajaj,Yu Cao,Cathy Lee,Wu Lu,Siddharth Rajan	35
6	Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures 2018 ·Applied Physics Letters ·Yuewei Zhang,Adam T. Neal,Zhanbo Xia,Chandan Joishi,Jared M. Johnson,Yuanhua Zheng,Sanyam Bajaj,Mark Brenner,Donald L. Dorsey,Kelson D. Chabak,Gregg H. Jessen,Jinwoo Hwang,Shin Mou,Joseph P. Heremans,Siddharth Rajan	281
7	Ultra-wide band gap AlGaN polarization-doped field effect transistor 2018 ·Japanese Journal of Applied Physics ·Andrew Armstrong,Brianna Klein,(unknown),Andrew A. Allerman,E Douglas,Albert G. Baca,Torben R. Fortune,(unknown),Sanyam Bajaj,Siddharth Rajan	21
8	Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts 2018 ·IEEE Electron Device Letters ·Zhanbo Xia,Chandan Joishi,Sriram Krishnamoorthy,Sanyam Bajaj,Yuewei Zhang,Mark Brenner,Saurabh Lodha,Siddharth Rajan	113
9	All MOCVD grown 250 nm gate length Al_0.70Ga_0.30N MESFETs 2018 ·Hao Xue,Towhidur Razzak,(unknown),(unknown),Sanyam Bajaj,Yuewei Zhang,(unknown),Shahadat H. Sohel,Asif Khan,Siddharth Rajan,Wu Lu	2
10	Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency 2018 ·Applied Physics Letters ·Yuewei Zhang,(unknown),Fatih Akyol,Sanyam Bajaj,Jared M. Johnson,(unknown),Andrew A. Allerman,Michael W. Moseley,Andrew Armstrong,Jinwoo Hwang,Siddharth Rajan	65
11	High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm 2017 ·IEEE Electron Device Letters ·Sanyam Bajaj,Andrew A. Allerman,Andrew Armstrong,Towhidur Razzak,(unknown),(unknown),Shahadat H. Sohel,Yuewei Zhang,Wu Lu,Aaron R. Arehart,Fatih Akyol,Siddharth Rajan	51
12	Delta-doped β-gallium oxide field-effect transistor 2017 ·Applied Physics Express ·Sriram Krishnamoorthy,Zhanbo Xia,Sanyam Bajaj,Mark Brenner,Siddharth Rajan	116
13	Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity 2017 ·IEEE Transactions on Electron Devices ·Sanyam Bajaj,(unknown),Fatih Akyol,Pil Sung Park,Yuewei Zhang,(unknown),Sriram Krishnamoorthy,David J. Meyer,Siddharth Rajan	67
14	Small-signal characteristics of graded AlGaN channel PolFETs 2017 ·Sanyam Bajaj,(unknown),Fatih Akyol,Pil Sung Park,Yuewei Zhang,Shahadat H. Sohel,Sriram Krishnamoorthy,David J. Meyer,Siddharth Rajan	2
15	Tunnel-injected sub-260 nm ultraviolet light emitting diodes 2017 ·Applied Physics Letters ·Yuewei Zhang,Sriram Krishnamoorthy,Fatih Akyol,Sanyam Bajaj,Andrew A. Allerman,Michael W. Moseley,Andrew Armstrong,Siddharth Rajan	54
16	AlGaN channel field effect transistors with graded heterostructure ohmic contacts 2016 ·Applied Physics Letters ·Sanyam Bajaj,Fatih Akyol,Sriram Krishnamoorthy,Yuewei Zhang,Siddharth Rajan	76
17	Ultra-wide bandgap AlGaN channel MISFET with polarization engineered ohmics 2016 ·Sanyam Bajaj,Fatih Akyol,Sriram Krishnamoorthy,Yuewei Zhang,Andrew Armstrong,Andrew A. Allerman,Siddharth Rajan	2
18	Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride 2015 ·Applied Physics Letters ·Jacob B. Khurgin,Sanyam Bajaj,Siddharth Rajan	5
19	Lateral energy band engineering of Al<inf>2</inf>O<inf>3</inf>/III-nitride interfaces 2014 ·Ting-Hsiang Hung,Pil Sung Park,Sriram Krishnamoorthy,Digbijoy N. Nath,Sanyam Bajaj,Siddharth Rajan	1
20	Electrical properties of atomic layer deposited aluminum oxide on gallium nitride 2011 ·Applied Physics Letters ·Michele Esposto,Sriram Krishnamoorthy,Digbijoy N. Nath,Sanyam Bajaj,Ting-Hsiang Hung,Siddharth Rajan	153

About Sanyam Bajaj

Sanyam Bajaj is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 23 papers that have together received 1.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (20 papers), Ga2O3 and related materials (15 papers) and Semiconductor materials and devices (9 papers). The work is most often cited by research in Condensed Matter Physics (745 citations), Electronic, Optical and Magnetic Materials (920 citations) and Renewable Energy, Sustainability and the Environment (230 citations). Sanyam Bajaj has collaborated with scholars based in United States and India. Frequent co-authors include Siddharth Rajan, Sriram Krishnamoorthy, Yuewei Zhang, Zhanbo Xia, Mark Brenner, Fatih Akyol, Chandan Joishi, Ting-Hsiang Hung, Digbijoy N. Nath and Michele Esposto. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

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