Kamran Forghani

647 total citations
44 papers, 531 citations indexed

About

Kamran Forghani is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Kamran Forghani has authored 44 papers receiving a total of 531 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 24 papers in Atomic and Molecular Physics, and Optics and 20 papers in Condensed Matter Physics. Recurrent topics in Kamran Forghani's work include Semiconductor Quantum Structures and Devices (22 papers), GaN-based semiconductor devices and materials (20 papers) and Semiconductor materials and devices (13 papers). Kamran Forghani is often cited by papers focused on Semiconductor Quantum Structures and Devices (22 papers), GaN-based semiconductor devices and materials (20 papers) and Semiconductor materials and devices (13 papers). Kamran Forghani collaborates with scholars based in United States, Germany and Czechia. Kamran Forghani's co-authors include F. Scholz, T. F. Kuech, L. J. Mawst, Yingxin Guan, Oliver Klein, Ute Kaiser, S.E. Babcock, Johannes Biskupek, K. Thonke and Frank Lipski and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Renewable and Sustainable Energy Reviews.

In The Last Decade

Kamran Forghani

43 papers receiving 511 citations

Peers

Countries citing papers authored by Kamran Forghani

Since Specialization

Citations

This map shows the geographic impact of Kamran Forghani's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kamran Forghani with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kamran Forghani more than expected).

Fields of papers citing papers by Kamran Forghani

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kamran Forghani. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kamran Forghani. The network helps show where Kamran Forghani may publish in the future.

Co-authorship network of co-authors of Kamran Forghani

This figure shows the co-authorship network connecting the top 25 collaborators of Kamran Forghani. A scholar is included among the top collaborators of Kamran Forghani based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kamran Forghani. Kamran Forghani is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	A multi-period sustainable hydrogen supply chain model considering pipeline routing and carbon emissions: The case study of Oman 2022 ·Renewable and Sustainable Energy Reviews ·Kamran Forghani, Reza Kia, (unknown)	22
2	MOVPE Growth of AlInP–InGaP Distributed Bragg Reflectors 2020 ·IEEE Journal of Photovoltaics ·Kamran Forghani, Rekha Reddy, (unknown), Rao Tatavarti	4
3	MOVPE growth of AlInP-InGaP Distributed Bragg Reflectors (DBR) for Monolithic Integration into Multijunction Solar Cells 2019 ·Kamran Forghani, Rekha Reddy, (unknown), Rao Tatavarti	4
4	Recent Progress in Epitaxial Lift-Off Solar Cells 2018 ·Alexander P. Kirk, (unknown), Joshua D. Wood, Andree Wibowo, Kamran Forghani, (unknown), N. Pan, M.L. Osowski	22
5	Annealing-induced precipitate formation behavior in MOVPE-grown GaAs_1−xBi_xexplored by atom probe tomography and HAADF-STEM 2017 ·Nanotechnology ·(unknown), Weixin Chen, Honghyuk Kim, Yingxin Guan, Kamran Forghani, (unknown), T. F. Kuech, L. J. Mawst, S.E. Babcock	13
6	Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1−Bi /GaAs superlattice 2016 ·Journal of Crystal Growth ·Weixin Chen, Paul Ronsheim, (unknown), Kamran Forghani, Yingxin Guan, T. F. Kuech, S.E. Babcock	7
7	The Effect of the Bi Precursors, (CH₃)₃Bi and (C₂H₅)₃Bi, on the Metal‐Organic Vapor Phase Epitaxy of GaAs_1‐yBi_y Films 2015 ·Chemical Vapor Deposition ·Kamran Forghani, Yingxin Guan, (unknown), (unknown), L. J. Mawst, T. F. Kuech	12
8	Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1−xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging 2015 ·APL Materials ·Antony W. Wood, Yingxin Guan, Kamran Forghani, (unknown), T. F. Kuech, S.E. Babcock	11
9	Time-resolved PL and TEM studies of MOVPE-grown bulk dilute nitride and bismide quantum well heterostructure 2015 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Yongkun Sin, Zachary Lingley, Mark W. Peterson, (unknown), Steven C. Moss, Tae Wan Kim, Honghyuk Kim, Yingxin Guan, Kamran Forghani, L. J. Mawst, T. F. Kuech	1
10	Composition dependent valence band order in c-oriented wurtzite AlGaN layers 2014 ·Journal of Applied Physics ·Benjamin Neuschl, (unknown), (unknown), (unknown), (unknown), K. Thonke, Tobias Meisch, Kamran Forghani, F. Scholz, Martin Feneberg	23
11	Carrier Dynamics in MOVPE-Grown Bulk InGaAsNSb Materials and Epitaxial Lift-Off GaAs Double Heterostructures for Multi-junction Solar Cells 2014 ·MRS Proceedings ·Yongkun Sin, Stephen LaLumondiere, Nathan P. Wells, Zachary Lingley, Nathan Presser, William T. Lotshaw, Steven C. Moss, Tae Wan Kim, Kamran Forghani, L. J. Mawst, T. F. Kuech, Rao Tatavarti, Andree Wibowo, N. Pan	0
12	Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1−yBiy 2014 ·Journal of Crystal Growth ·Kamran Forghani, Yingxin Guan, (unknown), (unknown), S.E. Babcock, L. J. Mawst, T. F. Kuech	29
13	Designing robust layout in cellular manufacturing systems with uncertain demands 2013 ·SHILAP Revista de lepidopterología ·Kamran Forghani, Mohammad Mohammadi, Vahidreza Ghezavati	2
14	High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes 2013 ·Japanese Journal of Applied Physics ·T. Passow, (unknown), M. Kunzer, W. Pletschen, Lutz Kirste, Kamran Forghani, F. Scholz, K. Köhler, J. Wagner	5
15	Properties of ‘bulk’ GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration 2013 ·Journal of Crystal Growth ·(unknown), Kamran Forghani, L. J. Mawst, T. F. Kuech, S. D. LaLumondiere, Yongkun Sin, William T. Lotshaw, Steven C. Moss	22
16	Low temperature growth of GaAs1−yBiy epitaxial layers 2013 ·Journal of Crystal Growth ·Kamran Forghani, (unknown), L. J. Mawst, T. F. Kuech	20
17	Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system 2012 ·Journal of Applied Crystallography ·Sergey Lazarev, M. Barchuk, (unknown), Kamran Forghani, V. Holý, F. Scholz, Tilo Baumbach	13
18	Investigations on Si‐doped AlGaN: Below and above the Mott density 2012 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Kamran Forghani, (unknown), F. Scholz, K. Thonke	3
19	Efficient 350 nm LEDs on low edge threading dislocation density AlGaN buffer layers 2011 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown), T. Passow, W. Pletschen, M. Kunzer, Lutz Kirste, Kamran Forghani, F. Scholz, Oliver Klein, Ute Kaiser, K. Köhler, J. Wagner	2
20	In‐situ deposited SiN_x nanomask for crystal quality improvement in AlGaN 2011 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Kamran Forghani, (unknown), Martin Klein, F. Scholz, Oliver Klein, Ute Kaiser, Martin Feneberg, Benjamin Neuschl, K. Thonke	11

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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