Chih Hang Tung

654 total citations
14 papers, 517 citations indexed

About

Chih Hang Tung is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, Chih Hang Tung has authored 14 papers receiving a total of 517 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 2 papers in Mechanical Engineering. Recurrent topics in Chih Hang Tung's work include Semiconductor materials and devices (9 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). Chih Hang Tung is often cited by papers focused on Semiconductor materials and devices (9 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). Chih Hang Tung collaborates with scholars based in Singapore, United States and Italy. Chih Hang Tung's co-authors include K. L. Pey, S. Lombardo, Félix Palumbo, J. H. Stathis, B.P. Linder, Lei Tang, M. Radhakrishnan, Yu‐Wen Huang, G. Condorelli and Rakesh Ranjan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

Chih Hang Tung

12 papers receiving 509 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Chih Hang Tung Singapore	7	473	138	71	43	42	14	517
David Trémouilles France	15	580 1.2×	183 1.3×	48 0.7×	43 1.0×	35 0.8×	65	707
Ho-Kyu Kang South Korea	8	349 0.7×	189 1.4×	55 0.8×	44 1.0×	77 1.8×	28	389
Richard G. Southwick United States	16	961 2.0×	141 1.0×	84 1.2×	67 1.6×	57 1.4×	62	980
C. Huffman United States	14	502 1.1×	203 1.5×	37 0.5×	66 1.5×	66 1.6×	38	581
Takashi Eshita Japan	10	222 0.5×	159 1.2×	75 1.1×	40 0.9×	32 0.8×	35	300
B. Roberds United States	9	461 1.0×	108 0.8×	53 0.7×	84 2.0×	41 1.0×	15	503
Cory S. Wajda United States	11	385 0.8×	172 1.2×	55 0.8×	39 0.9×	81 1.9×	46	419
Yi-Fan Huang Taiwan	8	310 0.7×	50 0.4×	46 0.6×	76 1.8×	35 0.8×	18	409
Michael DiBattista United States	7	304 0.6×	165 1.2×	29 0.4×	137 3.2×	26 0.6×	24	353
J. Schaeffer United States	13	595 1.3×	189 1.4×	96 1.4×	20 0.5×	69 1.6×	32	628

Countries citing papers authored by Chih Hang Tung

Since Specialization

Citations

This map shows the geographic impact of Chih Hang Tung's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chih Hang Tung with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chih Hang Tung more than expected).

Fields of papers citing papers by Chih Hang Tung

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chih Hang Tung. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chih Hang Tung. The network helps show where Chih Hang Tung may publish in the future.

Co-authorship network of co-authors of Chih Hang Tung

This figure shows the co-authorship network connecting the top 25 collaborators of Chih Hang Tung. A scholar is included among the top collaborators of Chih Hang Tung based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chih Hang Tung. Chih Hang Tung is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

Li, Xiang, et al.. (2009). Impact of Gate Dielectric Breakdown Induced Microstructural Defects on Transistor Reliability. ECS Transactions. 22(1). 11–25.

Wang, Grace Huiqi, Eng-Huat Toh, T. K. Chan, et al.. (2008). Realization of Silicon-Germanium-Tin (SiGeSn) Source/Drain Stressors by Sn implant and Solid Phase Epitaxy for strain engineering in SiGe channel P-MOSFETs. National University of Singapore. 22. 128–129. 1 indexed citations

Wang, Grace Huiqi, Eng-Huat Toh, Xincai Wang, et al.. (2007). Silicon-Germanium-Tin (SiGeSn) Source and Drain Stressors formed by Sn Implant and Laser Annealing for Strained Silicon-Germanium Channel P-MOSFETs. National University of Singapore. 131–134. 4 indexed citations

Lim, Andy Eu-Jin, Rinus T. P. Lee, Xinpeng Wang, et al.. (2007). Yttrium- and Terbium-Based Interlayer on $ \hbox{SiO}_{2}$ and $\hbox{HfO}_{2}$ Gate Dielectrics for Work Function Modulation of Nickel Fully Silicided Gate in nMOSFET. IEEE Electron Device Letters. 28(6). 482–485. 5 indexed citations

Tung, Chih Hang, K. L. Pey, Rakesh Ranjan, Lei Tang, & D. S. Ang. (2006). Nanometal-oxide-semiconductor field-effect-transistor contact and gate silicide instability during gate dielectric breakdown. Applied Physics Letters. 89(22). 3 indexed citations

Condorelli, G., et al.. (2006). Structure and Conductance of the Breakdown Spot During the Early Stages of Progressive Breakdown. IEEE Transactions on Device and Materials Reliability. 6(4). 534–541. 16 indexed citations

Tanoto, H., Soon Fatt Yoon, Wan Khai Loke, et al.. (2005). Growth of GaAs on (100) Ge and Vicinal Ge Surface by Migration Enhanced Epitaxy. MRS Proceedings. 891. 3 indexed citations

Ranjan, Rakesh, et al.. (2005). Dielectric-breakdown-induced epitaxy: a universal breakdown defect in ultrathin gate dielectrics. IEEE Transactions on Device and Materials Reliability. 5(2). 190–197. 17 indexed citations

Tung, Chih Hang, et al.. (2005). Interface microstructure evolution of lead-free solder on Ni-based under bump metallizations during reflow and high temperature storage. IEEE Transactions on Device and Materials Reliability. 5(2). 212–216. 6 indexed citations

10.

Lombardo, S., J. H. Stathis, B.P. Linder, et al.. (2005). Dielectric breakdown mechanisms in gate oxides. Journal of Applied Physics. 98(12). 352 indexed citations

11.

Tung, Chih Hang. (2003). Process-Structure-Property Relationship and its Impact on Microelectronics Device Reliability and Failure Mechanism. JSTS Journal of Semiconductor Technology and Science. 3(3). 107–113.

12.

Tung, Chih Hang, K. L. Pey, Lei Tang, et al.. (2003). Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient. Applied Physics Letters. 83(11). 2223–2225. 82 indexed citations

13.

Huang, Yu‐Wen, et al.. (2002). Investigation of under bump metallization systems for flip-chip assemblies. 33–39. 16 indexed citations

14.

Lau, W. S., Taejoon Han, Nathan P. Sandler, et al.. (1998). The Superiority of N₂O Plasma Annealing over O₂ Plasma Annealing for Amorphous Tantalum Pentoxide (Ta₂O₅) Films. Japanese Journal of Applied Physics. 37(4B). L435–L435. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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