C. Papadas
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- Semiconductor materials and devices 45
- Advancements in Semiconductor Devices and Circuit Design 27
- Integrated Circuits and Semiconductor Failure Analysis 18
- Advanced Memory and Neural Computing 9
- Electrostatic Discharge in Electronics 7
- Low-power high-performance VLSI design 5
- Silicon Carbide Semiconductor Technologies 4
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- Electronic and Structural Properties of Oxides 8
- Journals
- Electronics Letters (7 papers)Solid-State Electronics (5 papers)IEEE Electron Device Letters (4 papers)
- Partner nations
- FranceGreeceSwitzerland
In The Last Decade
C. Papadas
58 papers receiving 470 citations
Peers
Comparison fields: 5 of 36
- Electrical and Electronic Engineering 480
- Materials Chemistry 129
- Hardware and Architecture 10
- Electronic, Optical and Magnetic Materials 25
- Atomic and Molecular Physics, and Optics 41
Countries citing papers authored by C. Papadas
This map shows the geographic impact of C. Papadas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Papadas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Papadas more than expected).
Fields of papers citing papers by C. Papadas
This network shows the impact of papers produced by C. Papadas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Papadas. The network helps show where C. Papadas may publish in the future.
Co-authorship network
The 25 scholars most cited alongside C. Papadas, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2023 | 1 | |
| 2 | 2014 | 2 | |
| 3 | 2007 | 1 | |
| 4 | 2002 | 3 | |
| 5 | 2000 | 1 | |
| 6 | Silicon Nitridation by Nitric Oxide (NO) for Ta2O5 Gate Dielectric Application in MOS Devices | 1999 | 1 |
| 7 | High performance 0.12 um nMOSFETs with nitrogen implanted epitaxial channels | 1999 | 1 |
| 8 | 1999 | 3 | |
| 9 | 1999 | 14 | |
| 10 | Transport Properties of the SiO(2)/Ta(2)O(5) stack as Gate Dielectric in CMOS Processes | 1998 | 2 |
| 11 | 1997 | 7 | |
| 12 | 1997 | 31 | |
| 13 | Electric Field Dependence of Charge Build-up Mechanisms and Breakdown Phenomena in Thin Oxides During Fowler-Nordheim Injection | 1996 | 4 |
| 14 | On the Charge Build-Up Mechanisms in Very Thin Insulator Layers | 1994 | 7 |
| 15 | Temperature Dependence of Fowler-Nordheim Emission Tunneling Current in MOS Structures | 1994 | 5 |
| 16 | 1993 | 7 | |
| 17 | 1993 | 4 | |
| 18 | 1993 | 1 | |
| 19 | 1993 | 1 | |
| 20 | 1992 | 2 |
About C. Papadas
C. Papadas is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Computer Graphics and Computer-Aided Design, having authored 60 papers that have together received 508 indexed citations. Recurring topics across this work include Semiconductor materials and devices (45 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers), Integrated Circuits and Semiconductor Failure Analysis (18 papers), Advanced Memory and Neural Computing (9 papers), Electronic and Structural Properties of Oxides (8 papers), Electrostatic Discharge in Electronics (7 papers), Low-power high-performance VLSI design (5 papers) and Silicon Carbide Semiconductor Technologies (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (480 citations), Materials Chemistry (129 citations) and Hardware and Architecture (10 citations). C. Papadas has collaborated with scholars based in France, Greece and Switzerland. Frequent co-authors include G. Ghibaudo, G. Pananakakis, R. Kies, P. Mortini, Carlo Riva, Emmanuel Vincent, F. Pio, S. Bruyère, N. Revil and Guillaume Morin. Their work appears in journals such as Electronics Letters, Solid-State Electronics, IEEE Electron Device Letters, Journal of Applied Physics and Microelectronics Reliability.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.