P. Mortini

433 total citations
33 papers, 343 citations indexed

About

P. Mortini is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Materials Chemistry. According to data from OpenAlex, P. Mortini has authored 33 papers receiving a total of 343 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 5 papers in Electronic, Optical and Magnetic Materials and 2 papers in Materials Chemistry. Recurrent topics in P. Mortini's work include Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). P. Mortini is often cited by papers focused on Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). P. Mortini collaborates with scholars based in France, Switzerland and India. P. Mortini's co-authors include C. Papadas, A. Juge, G. Ghibaudo, G. Pananakakis, Emmanuel Vincent, S. Bruyère, Carlo Riva, F. Pio, N. Revil and P. Candelier and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Electronics Letters.

In The Last Decade

P. Mortini

33 papers receiving 316 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Mortini France 10 335 50 21 12 12 33 343
J.D. Hayden United States 9 318 0.9× 35 0.7× 10 0.5× 29 2.4× 19 1.6× 34 326
Y.D. Chan United States 11 328 1.0× 50 1.0× 28 1.3× 23 1.9× 13 1.1× 48 332
R. Kies France 10 317 0.9× 84 1.7× 19 0.9× 33 2.8× 44 3.7× 21 323
Tomasz Brożek United States 9 273 0.8× 48 1.0× 26 1.2× 19 1.6× 11 0.9× 76 292
L. Pinzelli France 5 102 0.3× 39 0.8× 26 1.2× 9 0.8× 17 1.4× 12 109
S. Krishnan United States 13 477 1.4× 60 1.2× 16 0.8× 37 3.1× 19 1.6× 34 499
S.M. Jang Taiwan 7 193 0.6× 24 0.5× 35 1.7× 25 2.1× 34 2.8× 50 219
S. Aur United States 13 376 1.1× 27 0.5× 32 1.5× 15 1.3× 10 0.8× 36 383
A. Inani United States 5 313 0.9× 41 0.8× 15 0.7× 28 2.3× 28 2.3× 11 321
Z. Chbili United States 10 347 1.0× 36 0.7× 13 0.6× 20 1.7× 35 2.9× 24 352

Countries citing papers authored by P. Mortini

Since Specialization
Citations

This map shows the geographic impact of P. Mortini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Mortini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Mortini more than expected).

Fields of papers citing papers by P. Mortini

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Mortini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Mortini. The network helps show where P. Mortini may publish in the future.

Co-authorship network of co-authors of P. Mortini

This figure shows the co-authorship network connecting the top 25 collaborators of P. Mortini. A scholar is included among the top collaborators of P. Mortini based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Mortini. P. Mortini is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Giroux, François, et al.. (2002). Current and temperature distribution impact on electromigration failure location in SWEAT structure. 214–217. 5 indexed citations
2.
3.
Juge, A., et al.. (2002). Investigation on different ESD protection strategies devoted to 3.3V RF applications (2GHz) in a 0.18μm CMOS process. Journal of Electrostatics. 54(1). 55–71. 22 indexed citations
4.
Giroux, François, et al.. (2002). Wafer-level electromigration tests on NIST and SWEAT structures. 229–232. 2 indexed citations
5.
Leroux, Cédric, et al.. (1999). Extended SPICE-like model accounting for layout effects on snapback phenomenon during ESD events. Microelectronics Reliability. 39(6-7). 833–838. 2 indexed citations
6.
Bravaix, A., et al.. (1998). Projecting Device Lifetime for Scaling Technology Generations with the Quasi-Static model. European Solid-State Device Research Conference. 552–555. 1 indexed citations
7.
Goguenheim, D., et al.. (1998). HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS. Microelectronics Reliability. 38(4). 539–544. 4 indexed citations
8.
Bravaix, A., et al.. (1997). Effects of high temperature on performances and hot-carrier reliability in DC/AC stressed 0.35 um n-MOSFETs. European Solid-State Device Research Conference. 584–587. 1 indexed citations
9.
Vincent, Emmanuel, S. Bruyère, C. Papadas, & P. Mortini. (1997). Dielectric reliability in deep-submicron technologies: From thin to ultrathin oxides. Microelectronics Reliability. 37(10-11). 1499–1506. 31 indexed citations
10.
Bravaix, A., et al.. (1997). Influences of the different degradation mechanisms in AC-stressed p-MOSFET's during pass transistor operation. Microelectronic Engineering. 36(1-4). 305–308. 1 indexed citations
11.
Giroux, François, et al.. (1995). Linewidth influence on electromigration tests at wafer level on TiN/AlCu/TiN/Ti metal lines. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2635. 114–114. 2 indexed citations
12.
Papadas, C., et al.. (1995). On the degradation features of poly-emitter n-p-n BJTs after hot carrier injection. 32. 266–270. 4 indexed citations
13.
Papadas, C., G. Ghibaudo, F. Pio, et al.. (1994). On the charge build-up mechanisms in gate dielectrics. Solid-State Electronics. 37(3). 495–505. 32 indexed citations
14.
Mortini, P., et al.. (1993). Temperature, field and technological dependences of thin oxide breakdown characteristics. Microelectronics Journal. 24(4). 353–360. 6 indexed citations
15.
16.
Papadas, C., et al.. (1993). Reliability simulations of the endurance performance of FLOTOX EEPROM cells using spice. Quality and Reliability Engineering International. 9(4). 347–352. 1 indexed citations
17.
Papadas, C., et al.. (1993). Influence of rapid thermal nitridation process in N 2 O ambient on the endurance performance of FLOTOX EEPROM cells. Electronics Letters. 29(2). 242–243. 2 indexed citations
18.
Papadas, C., et al.. (1993). New method for the extraction of the coupling ratios in FLOTOX EEPROM cells. IEEE Transactions on Electron Devices. 40(10). 1870–1872. 13 indexed citations
19.
Mortini, P., et al.. (1993). Breakdown characteristics of gate and tunnel oxides versus field and temperature. Quality and Reliability Engineering International. 9(4). 321–324. 11 indexed citations
20.
Papadas, C., et al.. (1992). Influence of tunnel oxide thickness variation on the programmed window of FLOTOX EEPROM cells. Solid-State Electronics. 35(8). 1195–1196. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by J.D. Hayden Breakdown of academic impact, for papers by Y.D. Chan Breakdown of academic impact, for papers by R. Kies Breakdown of academic impact, for papers by Tomasz Brożek Breakdown of academic impact, for papers by L. Pinzelli Breakdown of academic impact, for papers by S. Krishnan Breakdown of academic impact, for papers by S.M. Jang Breakdown of academic impact, for papers by S. Aur Breakdown of academic impact, for papers by A. Inani Breakdown of academic impact, for papers by Z. Chbili
Rankless by CCL
2026