Zongyang Hu

3.6k total citations
71 papers, 3.0k citations indexed

About

Zongyang Hu is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Zongyang Hu has authored 71 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 44 papers in Condensed Matter Physics and 42 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Zongyang Hu's work include GaN-based semiconductor devices and materials (44 papers), Ga2O3 and related materials (37 papers) and Semiconductor materials and devices (26 papers). Zongyang Hu is often cited by papers focused on GaN-based semiconductor devices and materials (44 papers), Ga2O3 and related materials (37 papers) and Semiconductor materials and devices (26 papers). Zongyang Hu collaborates with scholars based in United States, United Kingdom and Japan. Zongyang Hu's co-authors include Huili Grace Xing, Debdeep Jena, Kazuki Nomoto, Wenshen Li, Bo Song, Mingda Zhu, Tohru Nakamura, Xiang Gao, Meng Qi and Kohei Sasaki and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and IEEE Transactions on Electron Devices.

In The Last Decade

Zongyang Hu

67 papers receiving 2.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Zongyang Hu United States 29 2.1k 1.7k 1.5k 1.4k 549 71 3.0k
Antonio Crespo United States 27 2.3k 1.1× 1.3k 0.7× 1.3k 0.9× 2.1k 1.5× 823 1.5× 66 3.3k
Joachim Würfl Germany 31 1.3k 0.6× 2.6k 1.5× 2.7k 1.8× 734 0.5× 128 0.2× 195 3.5k
Kazuki Nomoto United States 34 2.5k 1.2× 2.3k 1.3× 2.0k 1.4× 1.9k 1.4× 686 1.2× 136 4.0k
Chee‐Keong Tan United States 20 730 0.4× 463 0.3× 387 0.3× 771 0.6× 286 0.5× 70 1.4k
Mengyuan Hua Hong Kong 31 1.1k 0.6× 1.8k 1.0× 1.8k 1.2× 756 0.5× 133 0.2× 104 2.4k
Xuanwu Kang China 28 1.1k 0.5× 1.5k 0.9× 1.3k 0.9× 718 0.5× 153 0.3× 85 2.1k
Jacob H. Leach United States 26 897 0.4× 1.2k 0.7× 952 0.6× 1.1k 0.8× 208 0.4× 112 2.1k
Shu Yang China 33 1.8k 0.9× 3.0k 1.7× 2.8k 1.9× 692 0.5× 89 0.2× 126 3.5k
Robert Kaplar United States 30 893 0.4× 1.5k 0.9× 1.6k 1.1× 656 0.5× 116 0.2× 151 2.4k
Xuelin Yang China 26 991 0.5× 1.6k 0.9× 1.1k 0.8× 847 0.6× 74 0.1× 174 2.3k

Countries citing papers authored by Zongyang Hu

Since Specialization
Citations

This map shows the geographic impact of Zongyang Hu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Zongyang Hu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Zongyang Hu more than expected).

Fields of papers citing papers by Zongyang Hu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Zongyang Hu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Zongyang Hu. The network helps show where Zongyang Hu may publish in the future.

Co-authorship network of co-authors of Zongyang Hu

This figure shows the co-authorship network connecting the top 25 collaborators of Zongyang Hu. A scholar is included among the top collaborators of Zongyang Hu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Zongyang Hu. Zongyang Hu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Xiaolong, et al.. (2025). High-performance of low-fired (1-x)Na0.5Y0.5MoO4-xLi0.5Y0.5MoO4 ceramics and microstrip bandpass filters designs for LTCC. Ceramics International. 51(19). 28812–28818.
2.
Hu, Zongyang, et al.. (2024). Efficient model predictive control of boiler coal combustion based on NARX neutral network. Journal of Process Control. 134. 103158–103158. 6 indexed citations
3.
Nomoto, Kazuki, Wenshen Li, Bo Song, et al.. (2022). Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV. Applied Physics Letters. 120(12). 4 indexed citations
4.
Li, Wenshen, Kazuki Nomoto, Zongyang Hu, Debdeep Jena, & Huili Grace Xing. (2021). ON-Resistance of Ga2O3 Trench-MOS Schottky Barrier Diodes: Role of Sidewall Interface Trapping. IEEE Transactions on Electron Devices. 68(5). 2420–2426. 34 indexed citations
5.
Li, Lei, Kazuki Nomoto, Ming Pan, et al.. (2020). GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz. IEEE Electron Device Letters. 41(5). 689–692. 89 indexed citations
6.
Santi, Carlo De, Wenshen Li, Kazuki Nomoto, et al.. (2020). Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements. IEEE Transactions on Electron Devices. 67(10). 3954–3959. 31 indexed citations
7.
Li, Wenshen, Kazuki Nomoto, Zongyang Hu, Debdeep Jena, & Huili Grace Xing. (2020). Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga₂O₃. IEEE Transactions on Electron Devices. 67(10). 3938–3947. 54 indexed citations
8.
Santi, Carlo De, Kazuki Nomoto, Zongyang Hu, et al.. (2020). Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction. IEEE Transactions on Electron Devices. 67(10). 3978–3982. 4 indexed citations
9.
Li, Wenshen, Kazuki Nomoto, Aditya Sundar, et al.. (2019). Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms. Japanese Journal of Applied Physics. 58(SC). SCCD15–SCCD15. 18 indexed citations
10.
Meneghesso, Gaudenzio, Enrico Zanoni, Matteo Meneghini, et al.. (2019). Breakdown Walkout in Polarization-Doped Vertical GaN Diodes. IEEE Transactions on Electron Devices. 66(11). 4597–4603. 9 indexed citations
11.
Nomoto, Kazuki, Zongyang Hu, Wenshen Li, et al.. (2019). Recent Progress of GaN-Based Vertical Devices. ECS Meeting Abstracts. MA2019-02(31). 1348–1348. 1 indexed citations
12.
Li, Wenshen, Kazuki Nomoto, Zongyang Hu, Debdeep Jena, & Huili Grace Xing. (2019). Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/$R_{\text{on,sp}}$ of up to 0.95 GW/cm2. IEEE Electron Device Letters. 41(1). 107–110. 241 indexed citations
13.
Hu, Zongyang, Kazuki Nomoto, Wenshen Li, et al.. (2018). Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV. IEEE Electron Device Letters. 39(6). 869–872. 254 indexed citations
14.
Li, Wenshen, Huili Grace Xing, Kazuki Nomoto, et al.. (2018). Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel. IEEE Transactions on Electron Devices. 65(6). 2558–2564. 56 indexed citations
15.
Hu, Zongyang, Kazuki Nomoto, Wenshen Li, et al.. (2018). Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors. Applied Physics Letters. 113(12). 142 indexed citations
16.
Li, Wenshen, Zongyang Hu, Kazuki Nomoto, et al.. (2018). 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2. Applied Physics Letters. 113(20). 131 indexed citations
17.
Hu, Zongyang, Kazuki Nomoto, Meng Qi, et al.. (2017). 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy. IEEE Electron Device Letters. 38(8). 1071–1074. 64 indexed citations
18.
Nomoto, Kazuki, Samuel James Bader, Kevin Lee, et al.. (2017). Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature. 1–2. 2 indexed citations
19.
Zhu, Mingda, Bo Song, Zongyang Hu, et al.. (2016). Comparing buffer leakage in PolarMOSH on SiC and free-standing GaN substrates. 27–30. 2 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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