Jai Verma

1.7k total citations
54 papers, 1.4k citations indexed

About

Jai Verma is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jai Verma has authored 54 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Condensed Matter Physics, 22 papers in Electrical and Electronic Engineering and 20 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jai Verma's work include GaN-based semiconductor devices and materials (34 papers), Ga2O3 and related materials (20 papers) and Semiconductor Quantum Structures and Devices (12 papers). Jai Verma is often cited by papers focused on GaN-based semiconductor devices and materials (34 papers), Ga2O3 and related materials (20 papers) and Semiconductor Quantum Structures and Devices (12 papers). Jai Verma collaborates with scholars based in United States, India and Sweden. Jai Verma's co-authors include Huili Grace Xing, Debdeep Jena, Guowang Li, Vladimir Protasenko, Satyaki Ganguly, Debdeep Jena, Yu Cao, S. M. Islam, Ronghua Wang and Tom Zimmermann and has published in prestigious journals such as Journal of Geophysical Research Atmospheres, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Jai Verma

52 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jai Verma United States 20 1.1k 699 640 484 313 54 1.4k
Krzysztof Rapcewicz United States 11 595 0.6× 255 0.4× 231 0.4× 439 0.9× 370 1.2× 20 916
Mikhail Gaevski United States 21 1.5k 1.4× 844 1.2× 639 1.0× 677 1.4× 374 1.2× 86 1.8k
F. Natali France 26 1.3k 1.2× 544 0.8× 647 1.0× 666 1.4× 660 2.1× 94 1.8k
T. Dumelow United Kingdom 21 304 0.3× 441 0.6× 321 0.5× 241 0.5× 631 2.0× 69 1.1k
D. K. Wickenden United States 21 1.1k 1.0× 611 0.9× 597 0.9× 540 1.1× 544 1.7× 68 1.5k
Kentaro Onabe Japan 23 1.3k 1.2× 463 0.7× 1.2k 1.9× 724 1.5× 1.5k 4.8× 205 2.2k
R. Henn Germany 17 470 0.4× 372 0.5× 171 0.3× 353 0.7× 156 0.5× 37 874
A. Gerber Israel 22 878 0.8× 668 1.0× 232 0.4× 470 1.0× 931 3.0× 98 1.6k
V. Gottschalch Germany 22 355 0.3× 296 0.4× 1.0k 1.6× 697 1.4× 998 3.2× 145 1.7k
S. Elhamri United States 19 716 0.7× 390 0.6× 1.0k 1.6× 487 1.0× 906 2.9× 83 1.6k

Countries citing papers authored by Jai Verma

Since Specialization
Citations

This map shows the geographic impact of Jai Verma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jai Verma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jai Verma more than expected).

Fields of papers citing papers by Jai Verma

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jai Verma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jai Verma. The network helps show where Jai Verma may publish in the future.

Co-authorship network of co-authors of Jai Verma

This figure shows the co-authorship network connecting the top 25 collaborators of Jai Verma. A scholar is included among the top collaborators of Jai Verma based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jai Verma. Jai Verma is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Islam, S. M., Vladimir Protasenko, Kevin Lee, et al.. (2017). Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures. Applied Physics Letters. 111(9). 57 indexed citations
2.
Islam, S. M., Vladimir Protasenko, Sergei Rouvimov, et al.. (2015). Deep-UV LEDs using polarization-induced doping: Electroluminescence at cryogenic temperatures. 1. 67–68. 1 indexed citations
3.
Islam, S. M., et al.. (2015). Localized surface phonon polariton resonances in polar gallium nitride. Applied Physics Letters. 107(8). 55 indexed citations
4.
Qi, Meng, Kazuki Nomoto, Mingda Zhu, et al.. (2015). High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy. Applied Physics Letters. 107(23). 53 indexed citations
5.
Ganguly, Satyaki, Jai Verma, Huili Grace Xing, & Debdeep Jena. (2014). Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts. Applied Physics Express. 7(10). 105501–105501. 12 indexed citations
6.
Wang, Ronghua, Jia Guo, Bo Song, et al.. (2013). Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation. 24. 28.6.1–28.6.4. 9 indexed citations
7.
Verma, Jai, P. Kandaswamy, Vladimir Protasenko, et al.. (2013). Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes. Applied Physics Letters. 102(4). 55 indexed citations
8.
Zhao, Pei, Amit Verma, Jai Verma, et al.. (2013). GaN heterostructure barrier diodes (HBD) with polarization-induced delta-doping. 836. 203–204. 2 indexed citations
9.
Verma, Jai, P. Kandaswamy, Vladimir Protasenko, et al.. (2012). Tunnel injection GaN/AlN quantum dot UV LED. 62. 249–250. 1 indexed citations
10.
Li, Guowang, Ronghua Wang, Jia Guo, et al.. (2012). Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts. IEEE Electron Device Letters. 33(5). 661–663. 43 indexed citations
11.
Guo, Jia, Yu Cao, Chuanxin Lian, et al.. (2011). Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy. physica status solidi (a). 208(7). 1617–1619. 28 indexed citations
12.
Goodman, Kevin, Vladimir Protasenko, Jai Verma, et al.. (2011). Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy. Journal of Applied Physics. 109(8). 51 indexed citations
13.
Goodman, Kevin, Vladimir Protasenko, Jai Verma, et al.. (2011). Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide. Journal of Crystal Growth. 334(1). 113–117. 11 indexed citations
14.
Verma, Jai, et al.. (1985). Dielectric constant of mercuric iodide. Journal of Physics D Applied Physics. 18(3). 517–520. 6 indexed citations
15.
Verma, Jai, et al.. (1980). Series expansion method of calculating Debye temperatures of tetragonal crystals with TII Laue symmetry. Journal of Physics and Chemistry of Solids. 41(7). 809–810. 1 indexed citations
16.
Aggarwal, M. D., et al.. (1972). Note on the Characteristic Temperatures of Sphalerite-Structure Semiconductors. Canadian Journal of Physics. 50(11). 1220–1221. 1 indexed citations
17.
Aggarwal, M. D. & Jai Verma. (1972). Semiconducting properties of thallium telluride. physica status solidi (a). 12(1). K55–K57.
18.
Verma, Jai & M. D. Aggarwal. (1970). Grüneisen constant of some semiconductors. Solid State Communications. 8(22). 1929–1931. 2 indexed citations
19.
Verma, Jai, et al.. (1965). On the Elastic Moduli of a Crystal and Voigt and Reuss Relations. Journal of the Physical Society of Japan. 20(4). 635–636. 47 indexed citations
20.
Verma, Jai. (1962). Fast Neutron Bombardment of Voltage-Variable Capacitors. Journal of the Physical Society of Japan. 17(1). 242–242. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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