Debdeep Jena

1.5k total citations
29 papers, 1.2k citations indexed

About

Debdeep Jena is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Debdeep Jena has authored 29 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 11 papers in Condensed Matter Physics and 11 papers in Materials Chemistry. Recurrent topics in Debdeep Jena's work include GaN-based semiconductor devices and materials (10 papers), Semiconductor Quantum Structures and Devices (7 papers) and Ga2O3 and related materials (7 papers). Debdeep Jena is often cited by papers focused on GaN-based semiconductor devices and materials (10 papers), Semiconductor Quantum Structures and Devices (7 papers) and Ga2O3 and related materials (7 papers). Debdeep Jena collaborates with scholars based in United States, Germany and Canada. Debdeep Jena's co-authors include Huili Grace Xing, Alan Seabaugh, C. E. C. Wood, Rusen Yan, Qin Zhang, Tian Fang, Patrick Fay, Gregory L. Snider, Ronghua Wang and Kristof Tahy and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

Debdeep Jena

25 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Debdeep Jena United States 12 745 652 375 285 247 29 1.2k
C. H. Swartz United States 14 469 0.6× 421 0.6× 282 0.8× 209 0.7× 208 0.8× 40 707
Zhonghai Yu United States 18 665 0.9× 736 1.1× 380 1.0× 385 1.4× 187 0.8× 50 1.1k
R. Granzner Germany 15 787 1.1× 705 1.1× 183 0.5× 154 0.5× 171 0.7× 47 1.2k
D. Johnstone United States 20 602 0.8× 486 0.7× 342 0.9× 337 1.2× 235 1.0× 52 938
Brenda L. VanMil United States 18 915 1.2× 834 1.3× 119 0.3× 209 0.7× 358 1.4× 62 1.4k
Andrzej Taube Poland 15 492 0.7× 535 0.8× 191 0.5× 185 0.6× 119 0.5× 56 866
Mau‐Phon Houng Taiwan 17 580 0.8× 379 0.6× 119 0.3× 152 0.5× 224 0.9× 76 781
Emanuele Francesco Pecora Italy 19 393 0.5× 362 0.6× 169 0.5× 270 0.9× 252 1.0× 34 815
Joo In Lee South Korea 13 366 0.5× 467 0.7× 250 0.7× 220 0.8× 280 1.1× 45 703
X. Weng United States 16 381 0.5× 338 0.5× 310 0.8× 156 0.5× 202 0.8× 32 712

Countries citing papers authored by Debdeep Jena

Since Specialization
Citations

This map shows the geographic impact of Debdeep Jena's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Debdeep Jena with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Debdeep Jena more than expected).

Fields of papers citing papers by Debdeep Jena

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Debdeep Jena. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Debdeep Jena. The network helps show where Debdeep Jena may publish in the future.

Co-authorship network of co-authors of Debdeep Jena

This figure shows the co-authorship network connecting the top 25 collaborators of Debdeep Jena. A scholar is included among the top collaborators of Debdeep Jena based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Debdeep Jena. Debdeep Jena is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chaudhuri, Reet, Antonio T. Lucero, Austin Hickman, et al.. (2025). MOCVD-grown, ultra-thin barrier AlN/GaN/AlN HEMTs fabricated using commercial GaN foundry process for Ka-band operation. Applied Physics Express. 18(7). 76501–76501.
2.
Hensling, Felix V. E., Patrick Vogt, Jisung Park, et al.. (2024). Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy. Advanced Electronic Materials. 11(3). 2 indexed citations
3.
Wang, Xiaopeng, Kazuki Nomoto, Richard Al Hadi, et al.. (2024). Inverted Scanning Microwave Microscopy of GaN/AlN High-Electron Mobility Transistors. Espace ÉTS (ETS). 1–4.
4.
Nomoto, Kazuki, et al.. (2024). Strain-Balanced AlScN/GaN HEMTs with fT/fMAX of 173/321 GHz. 1–4.
5.
McCandless, Jonathan P., et al.. (2023). Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy. Japanese Journal of Applied Physics. 62(SF). SF1013–SF1013. 11 indexed citations
6.
Vogt, Patrick, Felix V. E. Hensling, Jonathan P. McCandless, et al.. (2022). Extending the Kinetic and Thermodynamic Limits of Molecular-Beam Epitaxy Utilizing Suboxide Sources or Metal-Oxide-Catalyzed Epitaxy. Physical Review Applied. 17(3). 19 indexed citations
7.
Jena, Debdeep. (2022). Quantum Physics of Semiconductor Materials and Devices. 6 indexed citations
8.
Nomoto, Kazuki, Huili Grace Xing, Debdeep Jena, & Yong-Jin Cho. (2022). N-polar GaN p-n junction diodes with low ideality factors. Applied Physics Express. 15(6). 64004–64004. 9 indexed citations
9.
Wright, John, et al.. (2020). Epitaxial superconducting tunnel diodes for light detection applications. Optical Materials Express. 10(7). 1724–1724. 4 indexed citations
10.
Bjaalie, Lars, Amit Verma, Burak Himmetoḡlu, et al.. (2015). Determination of the Mott-Hubbard gap in GdTiO3. Library, Museums and Press - UDSpace (University of Delaware). 2015. 1 indexed citations
11.
Sensale‐Rodriguez, Berardi, Rusen Yan, Lei Liu, Debdeep Jena, & Huili Grace Xing. (2013). Graphene for Reconfigurable Terahertz Optoelectronics. Proceedings of the IEEE. 101(7). 1705–1716. 102 indexed citations
12.
Hwang, Wan Sik, Maja Remškar, Rusen Yan, et al.. (2012). Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior. Applied Physics Letters. 101(1). 244 indexed citations
13.
Wang, Ronghua, Guowang Li, Oleg Laboutin, et al.. (2011). 210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation. IEEE Electron Device Letters. 32(7). 892–894. 87 indexed citations
14.
Wang, Ronghua, P. Saunier, Chuanxin Lian, et al.. (2010). Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance. IEEE Electron Device Letters. 31(12). 1383–1385. 141 indexed citations
15.
Sensale‐Rodriguez, Berardi, Tom Zimmermann, Yu Cao, et al.. (2010). Development of Microwave and Terahertz Detectors Utilizing AlN/GaN High Electron Mobility Transistors. 321–325. 3 indexed citations
16.
Zimmermann, Tom, et al.. (2009). Top-down AlN/GaN enhancement- & depletion-mode nanoribbon HEMTs. 129–130. 13 indexed citations
17.
Lian, Chuanxin, Kristof Tahy, Fang Tian, et al.. (2009). Quantum transport in patterned graphene nanoribbons. 1–2. 3 indexed citations
18.
Jena, Debdeep. (2009). A theory for the high-field current-carrying capacity of one-dimensional semiconductors. Journal of Applied Physics. 105(12). 9 indexed citations
19.
Zhang, Qin, Tian Fang, Huili Grace Xing, Alan Seabaugh, & Debdeep Jena. (2008). Graphene Nanoribbon Tunnel Transistors. IEEE Electron Device Letters. 29(12). 1344–1346. 170 indexed citations
20.
Wood, C. E. C. & Debdeep Jena. (2007). Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications. Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)). 115 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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