Dong Seup Lee

986 citations

13 papers · 830 indexed · h-index 10

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials 11
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 6
Electrical and Electronic Engineering top 10%
- Radio Frequency Integrated Circuit Design 5
- Semiconductor materials and devices 5
- Electrostatic Discharge in Electronics 1
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 1
Materials Chemistry
- ZnO doping and properties 2
- Graphene research and applications 1

Co-authors: Xiang GaoTomás Palacios Patrick Fay Shiping Guo David Kopp Han Wang S.R. Bahl Zhihong Liu
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Japanese Journal of Applied Physics (2 papers)IEEE Electron Device Letters (7 papers)Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics (1 paper)
Partner nations: United States South Korea Singapore

In The Last Decade

Dong Seup Lee

13 papers receiving 798 citations

Peers

Countries citing papers authored by Dong Seup Lee

Since Specialization

Citations

This map shows the geographic impact of Dong Seup Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dong Seup Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dong Seup Lee more than expected).

Fields of papers citing papers by Dong Seup Lee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dong Seup Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dong Seup Lee. The network helps show where Dong Seup Lee may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Dong Seup Lee, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Dong Seup Lee Line = papers co-authored together Dong Seup Lee links everyone, so they are left out of the graph.

All Works

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13 of 13 papers shown

#	Work
1	Product-level reliability of GaN devices S.R. Bahl,Daniel Ruíz,Dong Seup Lee	2016	61
2	GaN high electron mobility transistors for sub-millimeter wave applications Japanese Journal of Applied Physics ·Dong Seup Lee,Zhihong Liu,Tomás Palacios	2014	61
3	Device Delay in GaN Transistors Under High Drain Bias Conditions IEEE Electron Device Letters ·Dong Seup Lee,Oleg Laboutin,Yu Cao,J. W. Johnson,Edward Beam,A. Ketterson,Michael L. Schuette,P. Saunier,Tomás Palacios	2013	4
4	High linearity nanowire channel GaN HEMTs Dong Seup Lee,Han Wang,Allen Hsu,M. Azize,Oleg Laboutin,Yu Cao,Wayne Johnson,Edward Beam,A. Ketterson,Michael L. Schuette,P. Saunier,Tomás Palacios	2013	1
5	317 GHz InAlGaN/GaN HEMTs with extremely low on‐resistance Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Dong Seup Lee,Oleg Laboutin,Yu Cao,Wayne Johnson,Edward Beam,A. Ketterson,Michael L. Schuette,P. Saunier,David Kopp,Patrick Fay,Tomás Palacios	2013	19
6	Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$ IEEE Electron Device Letters ·Dong Seup Lee,Han Wang,Allen Hsu,M. Azize,Oleg Laboutin,Yu Cao,J. W. Johnson,Edward Beam,A. Ketterson,Michael L. Schuette,P. Saunier,Tomás Palacios	2013	98
7	Delay Analysis of Graphene Field-Effect Transistors IEEE Electron Device Letters ·Han Wang,Allen Hsu,Dong Seup Lee,Ki Kang Kim,Jing Kong,Tomás Palacios	2012	30
8	Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs IEEE Electron Device Letters ·Dong Seup Lee,Oleg Laboutin,Yu Cao,Wayne Johnson,Edward Beam,A. Ketterson,Michael L. Schuette,P. Saunier,Tomás Palacios	2012	38
9	Impact of GaN channel scaling in InAlN/GaN HEMTs Dong Seup Lee,Bin Lu,M. Azize,Xiang Gao,Shiping Guo,David Kopp,Patrick Fay,Tomás Palacios	2011	18
10	245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment IEEE Electron Device Letters ·Dong Seup Lee,Jinwook Chung,Han Wang,Xiang Gao,Shiping Guo,Patrick Fay,Tomás Palacios	2011	131
11	InAlN/GaN HEMTs With AlGaN Back Barriers IEEE Electron Device Letters ·Dong Seup Lee,Xiang Gao,Shiping Guo,Tomás Palacios	2011	147
12	300-GHz InAlN/GaN HEMTs With InGaN Back Barrier IEEE Electron Device Letters ·Dong Seup Lee,Xiang Gao,Shiping Guo,David Kopp,Patrick Fay,Tomás Palacios	2011	220
13	Silicon-Based Dual-Gate Single-Electron Transistors for Logic Applications Japanese Journal of Applied Physics ·Dong Seup Lee,Hong‐Seon Yang,Kwon-Chil Kang,Joung-Eob Lee,Jung Han Lee,Sang Hyuk Park,Byung‐Gook Park	2009	2

About Dong Seup Lee

Dong Seup Lee is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 13 papers that have together received 830 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (11 papers), Ga2O3 and related materials (6 papers), Radio Frequency Integrated Circuit Design (5 papers), Semiconductor materials and devices (5 papers), ZnO doping and properties (2 papers), Graphene research and applications (1 paper), Semiconductor Quantum Structures and Devices (1 paper) and Electrostatic Discharge in Electronics (1 paper). The work is most often cited by research in Condensed Matter Physics (761 citations), Electronic, Optical and Magnetic Materials (367 citations) and Electrical and Electronic Engineering (633 citations). Dong Seup Lee has collaborated with scholars based in United States, South Korea and Singapore. Frequent co-authors include Xiang Gao, Tomás Palacios, Patrick Fay, Shiping Guo, Tomás Palacios, David Kopp, Shiping Guo, Han Wang, S.R. Bahl and Zhihong Liu. Their work appears in journals such as Japanese Journal of Applied Physics, IEEE Electron Device Letters and Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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