Dong Seup Lee

986 total citations
13 papers, 830 citations indexed

About

Dong Seup Lee is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Dong Seup Lee has authored 13 papers receiving a total of 830 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Condensed Matter Physics, 11 papers in Electrical and Electronic Engineering and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Dong Seup Lee's work include GaN-based semiconductor devices and materials (11 papers), Ga2O3 and related materials (6 papers) and Radio Frequency Integrated Circuit Design (5 papers). Dong Seup Lee is often cited by papers focused on GaN-based semiconductor devices and materials (11 papers), Ga2O3 and related materials (6 papers) and Radio Frequency Integrated Circuit Design (5 papers). Dong Seup Lee collaborates with scholars based in United States, South Korea and Singapore. Dong Seup Lee's co-authors include Xiang Gao, Tomás Palacios, Patrick Fay, Shiping Guo, Tomás Palacios, David Kopp, Shiping Guo, Han Wang, S.R. Bahl and Zhihong Liu and has published in prestigious journals such as Japanese Journal of Applied Physics, IEEE Electron Device Letters and Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics.

In The Last Decade

Dong Seup Lee

13 papers receiving 798 citations

Peers

Countries citing papers authored by Dong Seup Lee

Since Specialization

Citations

This map shows the geographic impact of Dong Seup Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dong Seup Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dong Seup Lee more than expected).

Fields of papers citing papers by Dong Seup Lee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dong Seup Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dong Seup Lee. The network helps show where Dong Seup Lee may publish in the future.

Co-authorship network of co-authors of Dong Seup Lee

This figure shows the co-authorship network connecting the top 25 collaborators of Dong Seup Lee. A scholar is included among the top collaborators of Dong Seup Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dong Seup Lee. Dong Seup Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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13 of 13 papers shown

#	Work	Indexed citations
1	Product-level reliability of GaN devices 2016 ·S.R. Bahl, Daniel Ruíz, Dong Seup Lee	61
2	GaN high electron mobility transistors for sub-millimeter wave applications 2014 ·Japanese Journal of Applied Physics ·Dong Seup Lee, Zhihong Liu, Tomás Palacios	61
3	Device Delay in GaN Transistors Under High Drain Bias Conditions 2013 ·IEEE Electron Device Letters ·Dong Seup Lee, Oleg Laboutin, Yu Cao, J. W. Johnson, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, Tomás Palacios	4
4	High linearity nanowire channel GaN HEMTs 2013 ·Dong Seup Lee, Han Wang, Allen Hsu, M. Azize, Oleg Laboutin, Yu Cao, Wayne Johnson, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, Tomás Palacios	1
5	317 GHz InAlGaN/GaN HEMTs with extremely low on‐resistance 2013 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Dong Seup Lee, Oleg Laboutin, Yu Cao, Wayne Johnson, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, David Kopp, Patrick Fay, Tomás Palacios	19
6	Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$ 2013 ·IEEE Electron Device Letters ·Dong Seup Lee, Han Wang, Allen Hsu, M. Azize, Oleg Laboutin, Yu Cao, J. W. Johnson, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, Tomás Palacios	98
7	Delay Analysis of Graphene Field-Effect Transistors 2012 ·IEEE Electron Device Letters ·Han Wang, Allen Hsu, Dong Seup Lee, Ki Kang Kim, Jing Kong, Tomás Palacios	30
8	Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs 2012 ·IEEE Electron Device Letters ·Dong Seup Lee, Oleg Laboutin, Yu Cao, Wayne Johnson, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier, Tomás Palacios	38
9	Impact of GaN channel scaling in InAlN/GaN HEMTs 2011 ·Dong Seup Lee, Bin Lu, (unknown), Xiang Gao, Shiping Guo, David Kopp, Patrick Fay, Tomás Palacios	18
10	245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment 2011 ·IEEE Electron Device Letters ·Dong Seup Lee, Jinwook Chung, Han Wang, Xiang Gao, Shiping Guo, Patrick Fay, Tomás Palacios	131
11	InAlN/GaN HEMTs With AlGaN Back Barriers 2011 ·IEEE Electron Device Letters ·Dong Seup Lee, Xiang Gao, Shiping Guo, Tomás Palacios	147
12	300-GHz InAlN/GaN HEMTs With InGaN Back Barrier 2011 ·IEEE Electron Device Letters ·Dong Seup Lee, Xiang Gao, Shiping Guo, David Kopp, Patrick Fay, Tomás Palacios	220
13	Silicon-Based Dual-Gate Single-Electron Transistors for Logic Applications 2009 ·Japanese Journal of Applied Physics ·Dong Seup Lee, (unknown), (unknown), (unknown), Jung Han Lee, (unknown), Byung‐Gook Park	2

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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