Michael L. Schuette

771 total citations
35 papers, 641 citations indexed

About

Michael L. Schuette is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Michael L. Schuette has authored 35 papers receiving a total of 641 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 27 papers in Condensed Matter Physics and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Michael L. Schuette's work include GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (17 papers) and Ga2O3 and related materials (9 papers). Michael L. Schuette is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (17 papers) and Ga2O3 and related materials (9 papers). Michael L. Schuette collaborates with scholars based in United States and South Korea. Michael L. Schuette's co-authors include P. Saunier, A. Ketterson, Edward Beam, Wu Lu, Xiang Gao, Yu Cao, Tomás Palacios, Dong Seup Lee, Oleg Laboutin and Hyeongnam Kim and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Michael L. Schuette

34 papers receiving 595 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Michael L. Schuette United States 12 562 492 247 175 94 35 641
Silvia Lenci Belgium 12 548 1.0× 542 1.1× 241 1.0× 201 1.1× 55 0.6× 38 650
David A. Deen United States 17 502 0.9× 454 0.9× 289 1.2× 165 0.9× 181 1.9× 27 645
X. Z. Dang United States 9 732 1.3× 526 1.1× 350 1.4× 254 1.5× 203 2.2× 12 825
Claude Ahyi United States 10 253 0.5× 272 0.6× 139 0.6× 130 0.7× 97 1.0× 14 394
Chi-Chih Liao Taiwan 10 232 0.4× 233 0.5× 106 0.4× 143 0.8× 158 1.7× 28 437
Mohsen Nami United States 15 460 0.8× 330 0.7× 207 0.8× 202 1.2× 223 2.4× 32 653
Y. Smorchkova United States 9 324 0.6× 197 0.4× 153 0.6× 117 0.7× 111 1.2× 15 391
Friedhard Römer Germany 14 441 0.8× 412 0.8× 145 0.6× 314 1.8× 187 2.0× 63 710
Jinyu Ni China 11 395 0.7× 310 0.6× 230 0.9× 57 0.3× 131 1.4× 32 458
J.-I. Chyi Taiwan 10 324 0.6× 339 0.7× 173 0.7× 76 0.4× 105 1.1× 20 410

Countries citing papers authored by Michael L. Schuette

Since Specialization
Citations

This map shows the geographic impact of Michael L. Schuette's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Michael L. Schuette with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Michael L. Schuette more than expected).

Fields of papers citing papers by Michael L. Schuette

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Michael L. Schuette. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Michael L. Schuette. The network helps show where Michael L. Schuette may publish in the future.

Co-authorship network of co-authors of Michael L. Schuette

This figure shows the co-authorship network connecting the top 25 collaborators of Michael L. Schuette. A scholar is included among the top collaborators of Michael L. Schuette based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Michael L. Schuette. Michael L. Schuette is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Walwil, Husam, Daniel Shoemaker, Yiwen Song, et al.. (2024). Thermophysical Property Measurement of GaN-on-AlN Wafers for Next-Generation RF Device Technologies. 1 indexed citations
2.
Shoemaker, Daniel, Yiwen Song, Michael L. Schuette, et al.. (2023). Implications of Interfacial Thermal Transport on the Self-Heating of GaN-on-SiC High Electron Mobility Transistors. IEEE Transactions on Electron Devices. 70(10). 5036–5043. 9 indexed citations
3.
Leedy, Kevin, et al.. (2021). Interface control and electron transport in ALD ZnO/Al 2 O 3 TFTs studied by gated Hall effect. Semiconductor Science and Technology. 36(7). 75005–75005. 2 indexed citations
4.
Wang, Buguo, et al.. (2020). Deep level defects and their instability in PLD-grown IGZO (In 2 Ga 2 Zn 5 O 11 ) thin films studied by thermally stimulated current spectroscopy. Semiconductor Science and Technology. 35(12). 124002–124002. 3 indexed citations
5.
Kazimierczuk, Marian K., et al.. (2020). Gated Hall and field-effect transport characterization of e-mode ZnO TFTs. Applied Physics Letters. 116(25). 2 indexed citations
6.
McCandless, Jonathan P., Michael L. Schuette, & Kevin Leedy. (2018). Vertical resistivity in nanocrystalline ZnO and amorphous InGaZnO. 7679. 40–40. 1 indexed citations
7.
Gao, Xiang, et al.. (2014). Ultra‐thin barrier quaternary InAlGaN HEMTs with state of the art sheet resistance. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 495–497. 3 indexed citations
8.
Lee, Dong Seup, Han Wang, Allen Hsu, et al.. (2013). High linearity nanowire channel GaN HEMTs. 48. 195–196. 1 indexed citations
9.
Saunier, P., Michael L. Schuette, Tso-Min Chou, et al.. (2013). InAlN Barrier Scaled Devices for Very High $f_{T}$ and for Low-Voltage RF Applications. IEEE Transactions on Electron Devices. 60(10). 3099–3104. 43 indexed citations
10.
Lee, Dong Seup, Oleg Laboutin, Yu Cao, et al.. (2013). Device Delay in GaN Transistors Under High Drain Bias Conditions. IEEE Electron Device Letters. 34(7). 849–851. 4 indexed citations
11.
Schuette, Michael L., A. Ketterson, Bo Song, et al.. (2013). Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz. IEEE Electron Device Letters. 34(6). 741–743. 92 indexed citations
12.
Song, Bo, Berardi Sensale‐Rodriguez, Ronghua Wang, et al.. (2012). Monolithically integrated E/D-mode InAlN HEMTs with &#x0192;<inf>t</inf>/&#x0192;<inf>max</inf> &#x003E; 200/220 GHz. 32. 1–2. 7 indexed citations
13.
Lee, Dong Seup, Oleg Laboutin, Yu Cao, et al.. (2012). Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs. IEEE Electron Device Letters. 33(7). 976–978. 38 indexed citations
14.
Sensale‐Rodriguez, Berardi, Jia Guo, Ronghua Wang, et al.. (2012). Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs. Solid-State Electronics. 80. 67–71. 6 indexed citations
15.
Wong, Man Hoi, David F. Brown, Michael L. Schuette, et al.. (2011). X-band power performance of N-face GaN MIS-HEMTs. Electronics Letters. 47(3). 214–215. 8 indexed citations
16.
Schuette, Michael L., et al.. (2010). Improved Sensitivity of AlGaN/GaN Field Effect Transistor Biosensors by Optimized Surface Functionalization. IEEE Sensors Journal. 11(8). 1726–1735. 24 indexed citations
17.
Schuette, Michael L. & Wu Lu. (2007). Compositional Study of Copper-Germanium Ohmic Contact to n-GaN. Journal of Electronic Materials. 36(4). 420–425. 6 indexed citations
18.
Schuette, Michael L. & Wu Lu. (2007). Electrical transport in the copper germanide-n-GaN system: Experiment and numerical model. Journal of Applied Physics. 101(11). 2 indexed citations
19.
Schuette, Michael L. & Wu Lu. (2007). Highly selective zero-bias plasma etching of GaN over AlGaN. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 25(6). 1870–1874. 11 indexed citations
20.
Schuette, Michael L. & Wu Lu. (2005). Copper germanide Ohmic contact on n-type gallium nitride using silicon tetrachloride plasma. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(6). 3143–3147. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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