M. Azize

2.0k total citations · 1 hit paper
35 papers, 1.7k citations indexed

About

M. Azize is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, M. Azize has authored 35 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Condensed Matter Physics, 25 papers in Electrical and Electronic Engineering and 15 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in M. Azize's work include GaN-based semiconductor devices and materials (28 papers), Semiconductor materials and devices (16 papers) and Ga2O3 and related materials (15 papers). M. Azize is often cited by papers focused on GaN-based semiconductor devices and materials (28 papers), Semiconductor materials and devices (16 papers) and Ga2O3 and related materials (15 papers). M. Azize collaborates with scholars based in France, United States and Spain. M. Azize's co-authors include Tomás Palacios, Jing Kong, Pınar Zorlutuna, Keekyoung Kim, Masoud Khabiry, Xiaowu Tang, Su Ryon Shin, Kai‐Tak Wan, Sung Mi Jung and Hojae Bae and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. Azize

35 papers receiving 1.6k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Carbon-Nanotube-Embedded Hydrogel Sheets for Engineering Cardiac Constructs and Bioactuators

2013 767 citations M. Azize, Tomás Palacios et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Azize France	15	817	673	624	429	338	35	1.7k
Huanqing Cui China	20	270 0.3×	975 1.4×	173 0.3×	126 0.3×	330 1.0×	41	1.7k
Alberto Riminucci Italy	20	117 0.1×	326 0.5×	826 1.3×	327 0.8×	233 0.7×	47	1.5k
Berna Özkale Switzerland	14	376 0.5×	580 0.9×	125 0.2×	97 0.2×	94 0.3×	30	1.0k
Emily E. Evans United States	15	659 0.8×	1.3k 1.9×	152 0.2×	119 0.3×	418 1.2×	26	1.9k
S. J. Chung South Korea	16	157 0.2×	471 0.7×	444 0.7×	129 0.3×	324 1.0×	32	1.1k
Jiu‐an Lv China	19	429 0.5×	1.3k 2.0×	238 0.4×	647 1.5×	203 0.6×	33	2.5k
Fanan Wei China	18	480 0.6×	731 1.1×	335 0.5×	31 0.1×	82 0.2×	49	1.3k
Kyungsuk Yum United States	19	112 0.1×	783 1.2×	263 0.4×	78 0.2×	88 0.3×	28	1.5k
Nicholas A. Sather United States	10	196 0.2×	354 0.5×	462 0.7×	98 0.2×	303 0.9×	19	1.3k
Xiaochan Li China	15	292 0.4×	280 0.4×	127 0.2×	204 0.5×	52 0.2×	30	824

Countries citing papers authored by M. Azize

Since Specialization

Citations

This map shows the geographic impact of M. Azize's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Azize with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Azize more than expected).

Fields of papers citing papers by M. Azize

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Azize. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Azize. The network helps show where M. Azize may publish in the future.

Co-authorship network of co-authors of M. Azize

This figure shows the co-authorship network connecting the top 25 collaborators of M. Azize. A scholar is included among the top collaborators of M. Azize based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Azize. M. Azize is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Sun, Min, Hiu Yung Wong, Yuxuan Lin, et al.. (2015). Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes. IEEE Transactions on Electron Devices. 62(7). 2155–2161. 138 indexed citations

Joglekar, Sameer, et al.. (2015). Impact of Al<sub>2</sub>O<sub>3</sub> Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 63(1). 318–325. 27 indexed citations

Zhang, Yuhao, Min Sun, Daniel Piedra, et al.. (2014). GaN-on-Si Vertical Schottky and p-n Diodes. IEEE Electron Device Letters. 35(6). 618–620. 162 indexed citations

Cooper, David, Jean‐Luc Rouvière, Armand Béché, et al.. (2013). Towards rapid nanoscale measurement of strain in III-nitride heterostructures. Applied Physics Letters. 103(23). 8 indexed citations

Lee, Dong Seup, Han Wang, Allen Hsu, et al.. (2013). High linearity nanowire channel GaN HEMTs. 48. 195–196. 1 indexed citations

Azize, M., et al.. (2012). Correlating stress generation and sheet resistance in InAlN/GaN nanoribbon high electron mobility transistors. Applied Physics Letters. 101(11). 9 indexed citations

Calle, F., Alejandro F. Braña, Y. Cordier, et al.. (2008). High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1971–1973. 25 indexed citations

Contreras, Sylvie, B. Jouault, L. Kończewicz, et al.. (2008). Investigation of AlGaN∕AlN∕GaN heterostructures for magnetic sensor application from liquid helium temperature to 300°C. Applied Physics Letters. 92(4). 14 indexed citations

Cordier, Y., M. Azize, N. Baron, et al.. (2007). AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination. Journal of Crystal Growth. 309(1). 1–7. 26 indexed citations

10.

Tauk, R., J. Łusakowski, W. Knap, et al.. (2007). Low electron mobility of field-effect transistor determined by modulated magnetoresistance. Journal of Applied Physics. 102(10). 7 indexed citations

11.

Cordier, Y., M. Azize, N. Baron, et al.. (2007). Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures. Journal of Crystal Growth. 310(5). 948–954. 13 indexed citations

12.

Muret, Pierre, Julien Pernot, M. Azize, & Z. Bougrioua. (2007). Photoinduced current transient spectroscopy of deep levels and transport mechanisms in iron-doped GaN thin films grown by low pressure-metalorganic vapor phase epitaxy. Journal of Applied Physics. 102(5). 8 indexed citations

13.

Azize, M., Z. Bougrioua, & P. Gibart. (2007). Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates. Journal of Crystal Growth. 299(1). 103–108. 18 indexed citations

14.

Azize, M., M. Leroux, M. Laügt, P. Gibart, & Z. Bougrioua. (2006). Strain and microstructure in Fe‐doped GaN layers grown by low pressure metalorganic vapour phase epitaxy. physica status solidi (a). 203(7). 1744–1748. 8 indexed citations

15.

Sakowicz, M., R. Tauk, J. Łusakowski, et al.. (2006). Low temperature electron mobility and concentration under the gate of AlGaN∕GaN field effect transistors. Journal of Applied Physics. 100(11). 10 indexed citations

16.

Bougrioua, Z., M. Azize, B. Beaumont, et al.. (2006). Photoelectric properties of highly excited GaN:Fe epilayers, grown by modulation- and continuous-doping techniques. Journal of Crystal Growth. 300(1). 228–232. 3 indexed citations

17.

Bougrioua, Z., M. Azize, P. Lorenzini, M. Laügt, & H. Haas. (2005). Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE. physica status solidi (a). 202(4). 536–544. 56 indexed citations

18.

Azize, M., et al.. (2005). Carrier profiles in Fe doped GaN layers grown by MOVPE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2153–2156. 9 indexed citations

19.

Braña, Alejandro F., Z. Bougrioua, M. Azize, et al.. (2005). Improved AlGaN/GaN HEMTs using Fe doping. 119–121. 2 indexed citations

20.

Lorenzini, P., Z. Bougrioua, Antoine Tiberj, et al.. (2005). Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN∕GaN heterostructures. Applied Physics Letters. 87(23). 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact