X. Z. Dang

984 total citations
12 papers, 825 citations indexed

About

X. Z. Dang is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, X. Z. Dang has authored 12 papers receiving a total of 825 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Condensed Matter Physics, 9 papers in Electrical and Electronic Engineering and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in X. Z. Dang's work include GaN-based semiconductor devices and materials (11 papers), Semiconductor materials and devices (8 papers) and Ga2O3 and related materials (3 papers). X. Z. Dang is often cited by papers focused on GaN-based semiconductor devices and materials (11 papers), Semiconductor materials and devices (8 papers) and Ga2O3 and related materials (3 papers). X. Z. Dang collaborates with scholars based in United States and China. X. Z. Dang's co-authors include Edward T. Yu, G.J. Sullivan, Eric J Miller, P.M. Asbeck, Joan M. Redwing, S. S. Lau, K. S. Boutros, B. T. McDermott, D. Qiao and H. H. Wieder and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Solid State Communications.

In The Last Decade

X. Z. Dang

12 papers receiving 789 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
X. Z. Dang United States 9 732 526 350 254 203 12 825
P. M. Bridger United States 11 453 0.6× 378 0.7× 174 0.5× 281 1.1× 165 0.8× 17 645
A.P. Zhang United States 8 693 0.9× 549 1.0× 272 0.8× 253 1.0× 197 1.0× 12 791
B. Schineller Germany 14 497 0.7× 307 0.6× 233 0.7× 279 1.1× 252 1.2× 72 640
Haibo Yin China 15 483 0.7× 361 0.7× 254 0.7× 177 0.7× 181 0.9× 61 614
Michael L. Schuette United States 12 562 0.8× 492 0.9× 247 0.7× 175 0.7× 94 0.5× 35 641
Takuma Nanjo Japan 16 790 1.1× 535 1.0× 450 1.3× 201 0.8× 213 1.0× 33 849
B.M. Green United States 8 1.1k 1.5× 882 1.7× 448 1.3× 265 1.0× 234 1.2× 11 1.2k
Narihiko Maeda Japan 14 674 0.9× 429 0.8× 395 1.1× 199 0.8× 215 1.1× 50 749
David A. Deen United States 17 502 0.7× 454 0.9× 289 0.8× 165 0.6× 181 0.9× 27 645
Mohsen Nami United States 15 460 0.6× 330 0.6× 207 0.6× 202 0.8× 223 1.1× 32 653

Countries citing papers authored by X. Z. Dang

Since Specialization
Citations

This map shows the geographic impact of X. Z. Dang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by X. Z. Dang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites X. Z. Dang more than expected).

Fields of papers citing papers by X. Z. Dang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by X. Z. Dang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by X. Z. Dang. The network helps show where X. Z. Dang may publish in the future.

Co-authorship network of co-authors of X. Z. Dang

This figure shows the co-authorship network connecting the top 25 collaborators of X. Z. Dang. A scholar is included among the top collaborators of X. Z. Dang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with X. Z. Dang. X. Z. Dang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

12 of 12 papers shown
2.
Yu, Edward T., X. Z. Dang, L. S. Yu, et al.. (2002). Piezoelectric enhancement of Schottky barrier heights in GaN-AlGaN HFET structures. 116–117. 1 indexed citations
3.
Dang, X. Z., Edward T. Yu, E. L. Piner, & B. T. McDermott. (2001). Influence of surface processing and passivation on carrier concentrations and transport properties in AlGaN/GaN heterostructures. Journal of Applied Physics. 90(3). 1357–1361. 51 indexed citations
4.
Dang, X. Z., et al.. (2000). Charging effects in AlGaN/GaN heterostructures probed using scanning capacitance microscopy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(4). 2304–2308. 11 indexed citations
5.
Miller, Eric J, X. Z. Dang, & Edward T. Yu. (2000). Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors. Journal of Applied Physics. 88(10). 5951–5958. 174 indexed citations
6.
Miller, Eric J, X. Z. Dang, H. H. Wieder, et al.. (2000). Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor. Journal of Applied Physics. 87(11). 8070–8073. 97 indexed citations
7.
Dang, X. Z., P.M. Asbeck, Edward T. Yu, et al.. (1999). Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor. Applied Physics Letters. 74(25). 3890–3892. 86 indexed citations
8.
Yu, Edward T., X. Z. Dang, P.M. Asbeck, S. S. Lau, & G.J. Sullivan. (1999). Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(4). 1742–1749. 176 indexed citations
9.
Dang, X. Z., R.J. Welty, D. Qiao, et al.. (1999). Fabrication and characterisation of enhanced barrierAlGaN/GaN HFET. Electronics Letters. 35(7). 602–603. 35 indexed citations
10.
Dang, X. Z., Chundong Wang, Edward T. Yu, K. S. Boutros, & Joan M. Redwing. (1998). Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures. Applied Physics Letters. 72(21). 2745–2747. 69 indexed citations
11.
Yu, Edward T., X. Z. Dang, L. S. Yu, et al.. (1998). Schottky barrier engineering in III–V nitrides via the piezoelectric effect. Applied Physics Letters. 73(13). 1880–1882. 120 indexed citations
12.
Zhang, G.Y., et al.. (1997). Effects of thermal convection on growth rate of GaN by MOVPE. Solid State Communications. 102(4). 331–334. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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