Cory Lund

821 citations

31 papers · 698 indexed · h-index 15

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 23
- GaN-based semiconductor devices and materials 23
Mechanics of Materials 10
- Metal and Thin Film Mechanics 10

Co-authors: S. Keller (25 shared papers)Umesh K. Mishra (22 shared papers)Silvia H. Chan (7 shared papers)Anchal Agarwal (6 shared papers)Chirag Gupta (5 shared papers)Nathan G. Young (3 shared papers)Michael D. Craven (3 shared papers)Aurélien David (3 shared papers)
Journals: Applied Physics Letters (5 papers)Semiconductor Science and Technology (4 papers)IEEE Electron Device Letters (3 papers)Journal of Applied Physics (2 papers)Applied Physics Express (2 papers)
Partner nations: United States Italy Germany

In The Last Decade

Cory Lund

30 papers receiving 665 citations

Peers

Countries citing papers authored by Cory Lund

Since Specialization

Citations

This map shows the geographic impact of Cory Lund's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Cory Lund with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Cory Lund more than expected).

Fields of papers citing papers by Cory Lund

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Cory Lund. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Cory Lund. The network helps show where Cory Lund may publish in the future.

Co-authors

The 25 scholars most cited alongside Cory Lund, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Cory Lund Line = papers co-authored together Cory Lund links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 31 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	In Situ <italic>O</italic>xide, <italic>G</italic>aN Interlayer-Based Vertical Trench MOS<italic>FET</italic> (<italic>OG-FET</italic>) on Bulk GaN substrates IEEE Electron Device Letters ·Chirag Gupta, Cory Lund, Silvia H. Chan, Anchal Agarwal, Junqian Liu, Yuuki Enatsu, S. Keller, Umesh K. Mishra	2017	142
2	Review—The Physics of Recombinations in III-Nitride Emitters ECS Journal of Solid State Science and Technology ·Aurélien David, Nathan G. Young, Cory Lund, Michael D. Craven	2019	78
3	Large-Area <italic>In-Situ</italic> Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) IEEE Electron Device Letters ·Dong Ji, Chirag Gupta, Anchal Agarwal, Silvia H. Chan, Cory Lund, Wenwen Li, S. Keller, Umesh K. Mishra, Srabanti Chowdhury	2018	61
4	Relaxedc-plane InGaN layers for the growth of strain-reduced InGaN quantum wells Semiconductor Science and Technology ·Karine Hestroffer, Feng Wu, Haoran Li, Cory Lund, S. Keller, James S. Speck, Umesh K. Mishra	2015	48
5	Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels Applied Physics Express ·Chirag Gupta, Silvia H. Chan, Cory Lund, Anchal Agarwal, Onur S. Koksaldi, Junqian Liu, Yuuki Enatsu, S. Keller, Umesh K. Mishra	2016	47
6	Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography Applied Physics Letters ·Bastien Bonef, M. Catalano, Cory Lund, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra, Moon J. Kim, S. Keller	2017	34
7	In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors Applied Physics Letters ·X. Liu, Ramya Yeluri, J. Kim, Shalini Lal, A. Raman, Cory Lund, Steven Wienecke, Jing Lu, Matthew A. Laurent, S. Keller, Umesh K. Mishra	2013	28
8	Thermal droop in high-quality InGaN LEDs Applied Physics Letters ·Aurélien David, Nathan G. Young, Cory Lund, Michael D. Craven	2019	27
9	Growth of high purity N-polar (In,Ga)N films Journal of Crystal Growth ·Cory Lund, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra, S. Keller	2016	21
10	Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN Journal of Applied Physics ·Cory Lund, M. Catalano, Lühua Wang, Christian Wurm, Thomas E. Mates, Moon J. Kim, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra, S. Keller	2018	18
11	Compensation between radiative and Auger recombinations in III-nitrides: The scaling law of separated-wavefunction recombinations Applied Physics Letters ·Aurélien David, Nathan G. Young, Cory Lund, Michael D. Craven	2019	18
12	Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades physica status solidi (b) ·Karine Hestroffer, Cory Lund, Haoran Li, S. Keller, James S. Speck, Umesh K. Mishra	2016	18
13	Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Maher Tahhan, Joseph Nedy, Silvia H. Chan, Cory Lund, Haoran Li, Geetak Gupta, S. Keller, Umesh K. Mishra	2016	18
14	Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices Journal of Applied Physics ·Cory Lund, Brian Romanczyk, M. Catalano, Qingxiao Wang, Wenjun Li, Domenic DiGiovanni, Moon J. Kim, Patrick Fay, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra, S. Keller	2017	17
15	Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy Journal of Crystal Growth ·Karine Hestroffer, Cory Lund, Onur S. Koksaldi, Haoran Li, Gordon Schmidt, Max Trippel, Peter Veit, F. Bertram, Ning Lü, Qingxiao Wang, J. Christen, Moon J. Kim, Umesh K. Mishra, S. Keller	2017	15
16	Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition Applied Physics Letters ·Caroline E. Reilly, Cory Lund, Shuji Nakamura, Umesh K. Mishra, Steven P. DenBaars, S. Keller	2019	14
17	Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates Applied Physics Express ·Cory Lund, Karine Hestroffer, Nirupam Hatui, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra, S. Keller	2017	14
18	InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays Semiconductor Science and Technology ·S. Keller, Cory Lund, Tyler Whyland, Yan-Ling Hu, Carl J. Neufeld, Silvia H. Chan, Steven Wienecke, Feng Wu, Shuji Nakamura, James S. Speck, Steven P. DenBaars, Umesh K. Mishra	2015	13
19	Performance projection of III‐nitride heterojunction nanowire tunneling field‐effect transistors physica status solidi (a) ·Wenjun Li, Lina Cao, Cory Lund, S. Keller, Patrick Fay	2015	11
20	Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD Semiconductor Science and Technology ·Cory Lund, Anchal Agarwal, Brian Romanczyk, Thomas E. Mates, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra, S. Keller	2018	10

About Cory Lund

Cory Lund is a scholar working on Condensed Matter Physics, Mechanics of Materials, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 31 papers that have together received 698 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (14 papers), Metal and Thin Film Mechanics (10 papers), ZnO doping and properties (8 papers), Semiconductor Quantum Structures and Devices (6 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers), Ga2O3 and related materials (5 papers) and Silicon Carbide Semiconductor Technologies (5 papers). The work is most often cited by research in Condensed Matter Physics (619 citations), Electronic, Optical and Magnetic Materials (276 citations), Electrical and Electronic Engineering (398 citations), Atomic and Molecular Physics, and Optics (181 citations) and Materials Chemistry (195 citations). Cory Lund has collaborated with scholars based in United States, Italy and Germany. Frequent co-authors include S. Keller, Umesh K. Mishra, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Nathan G. Young, Michael D. Craven, Aurélien David, Junqian Liu and Yuuki Enatsu. Their work appears in journals such as Applied Physics Letters, Semiconductor Science and Technology, IEEE Electron Device Letters, Journal of Applied Physics and Applied Physics Express.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact