Cory Lund

821 total citations
31 papers, 698 citations indexed

About

Cory Lund is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Mechanics of Materials. According to data from OpenAlex, Cory Lund has authored 31 papers receiving a total of 698 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 18 papers in Electrical and Electronic Engineering and 10 papers in Mechanics of Materials. Recurrent topics in Cory Lund's work include GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (14 papers) and Metal and Thin Film Mechanics (10 papers). Cory Lund is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (14 papers) and Metal and Thin Film Mechanics (10 papers). Cory Lund collaborates with scholars based in United States, Italy and Germany. Cory Lund's co-authors include S. Keller, Umesh K. Mishra, Silvia H. Chan, Anchal Agarwal, Aurélien David, Michael D. Craven, Nathan G. Young, Chirag Gupta, Junqian Liu and Yuuki Enatsu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Cory Lund

30 papers receiving 665 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Cory Lund United States 15 619 398 276 195 181 31 698
Yoshinobu Narita Japan 14 709 1.1× 459 1.2× 377 1.4× 216 1.1× 149 0.8× 32 754
Tanya Paskova United States 14 580 0.9× 225 0.6× 278 1.0× 284 1.5× 189 1.0× 25 640
Yaozong Zhong China 17 640 1.0× 484 1.2× 350 1.3× 168 0.9× 125 0.7× 35 707
Shun Washiyama United States 17 596 1.0× 314 0.8× 418 1.5× 218 1.1× 101 0.6× 28 678
B. Schineller Germany 14 497 0.8× 307 0.8× 233 0.8× 252 1.3× 279 1.5× 72 640
R. Hickman United States 11 612 1.0× 381 1.0× 314 1.1× 207 1.1× 146 0.8× 20 675
A. S. Zubrilov Russia 15 495 0.8× 349 0.9× 229 0.8× 243 1.2× 240 1.3× 58 654
K.P. Lee United States 8 505 0.8× 462 1.2× 209 0.8× 198 1.0× 198 1.1× 17 652
S. K. Lee South Korea 10 504 0.8× 251 0.6× 270 1.0× 241 1.2× 144 0.8× 13 552
M. Hayden Breckenridge United States 16 506 0.8× 291 0.7× 352 1.3× 165 0.8× 81 0.4× 25 568

Countries citing papers authored by Cory Lund

Since Specialization
Citations

This map shows the geographic impact of Cory Lund's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Cory Lund with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Cory Lund more than expected).

Fields of papers citing papers by Cory Lund

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Cory Lund. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Cory Lund. The network helps show where Cory Lund may publish in the future.

Co-authorship network of co-authors of Cory Lund

This figure shows the co-authorship network connecting the top 25 collaborators of Cory Lund. A scholar is included among the top collaborators of Cory Lund based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Cory Lund. Cory Lund is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lund, Cory, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra, & S. Keller. (2019). Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors. Semiconductor Science and Technology. 34(7). 75017–75017. 8 indexed citations
2.
Lund, Cory, et al.. (2019). Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition. Applied Physics Letters. 114(24). 14 indexed citations
3.
David, Aurélien, Nathan G. Young, Cory Lund, & Michael D. Craven. (2019). Compensation between radiative and Auger recombinations in III-nitrides: The scaling law of separated-wavefunction recombinations. Applied Physics Letters. 115(19). 18 indexed citations
4.
Lund, Cory. (2018). Metal-Organic Chemical Vapor Deposition of N-polar InGaN and InN for Electronic Devices. eScholarship (California Digital Library). 1 indexed citations
5.
Gupta, Chirag, Cory Lund, Silvia H. Chan, et al.. (2018). Corrections to “<italic>In Situ</italic> Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates’ [Mar 17 353-355]. IEEE Electron Device Letters. 39(2). 316–316. 5 indexed citations
6.
Lund, Cory, Anchal Agarwal, Brian Romanczyk, et al.. (2018). Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD. Semiconductor Science and Technology. 33(9). 95014–95014. 10 indexed citations
7.
Lund, Cory, M. Catalano, Lühua Wang, et al.. (2018). Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN. Journal of Applied Physics. 123(5). 18 indexed citations
8.
Ji, Dong, Chirag Gupta, Anchal Agarwal, et al.. (2018). Large-Area <italic>In-Situ</italic> Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET). IEEE Electron Device Letters. 39(5). 711–714. 61 indexed citations
9.
Lund, Cory, Brian Romanczyk, M. Catalano, et al.. (2017). Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices. Journal of Applied Physics. 121(18). 17 indexed citations
10.
Catalano, M., et al.. (2017). High Spatial Resolution Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography study of Indium segregation in N-polar InGaN Quantum Wells. Microscopy and Microanalysis. 23(S1). 1448–1449. 1 indexed citations
11.
Bonef, Bastien, M. Catalano, Cory Lund, et al.. (2017). Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography. Applied Physics Letters. 110(14). 34 indexed citations
12.
Gupta, Chirag, Cory Lund, Silvia H. Chan, et al.. (2017). In Situ <italic>O</italic>xide, <italic>G</italic>aN Interlayer-Based Vertical Trench MOS<italic>FET</italic> (<italic>OG-FET</italic>) on Bulk GaN substrates. IEEE Electron Device Letters. 38(3). 353–355. 142 indexed citations
13.
Lund, Cory, Karine Hestroffer, Nirupam Hatui, et al.. (2017). Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates. Applied Physics Express. 10(11). 111001–111001. 14 indexed citations
14.
Lund, Cory, Shuji Nakamura, Steven P. DenBaars, Umesh K. Mishra, & S. Keller. (2016). Growth of high purity N-polar (In,Ga)N films. Journal of Crystal Growth. 464. 127–131. 21 indexed citations
15.
Fay, Patrick, Lina Cao, S. M. Islam, et al.. (2016). Novel III-N heterostructure devices for low-power logic and more. 767–769. 4 indexed citations
16.
Hestroffer, Karine, Cory Lund, Haoran Li, et al.. (2016). Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades. physica status solidi (b). 253(4). 626–629. 18 indexed citations
17.
18.
Li, Wenjun, Lina Cao, Cory Lund, S. Keller, & Patrick Fay. (2015). Performance projection of III‐nitride heterojunction nanowire tunneling field‐effect transistors. physica status solidi (a). 213(4). 905–908. 11 indexed citations
19.
Sachs, Emanuel M., et al.. (2013). Direct Wafer™ - High Performance 156mm Silicon Wafers at Half the Cost of Sawn. EU PVSEC. 907–910. 4 indexed citations
20.
Yeluri, Ramya, Shalini Lal, Cory Lund, et al.. (2013). In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors. Applied Physics Letters. 103(5). 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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