M. Passlack

4.3k total citations
124 papers, 3.5k citations indexed

About

M. Passlack is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, M. Passlack has authored 124 papers receiving a total of 3.5k indexed citations (citations by other indexed papers that have themselves been cited), including 119 papers in Electrical and Electronic Engineering, 41 papers in Materials Chemistry and 33 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in M. Passlack's work include Semiconductor materials and devices (111 papers), Advancements in Semiconductor Devices and Circuit Design (55 papers) and Ga2O3 and related materials (32 papers). M. Passlack is often cited by papers focused on Semiconductor materials and devices (111 papers), Advancements in Semiconductor Devices and Circuit Design (55 papers) and Ga2O3 and related materials (32 papers). M. Passlack collaborates with scholars based in United States, Taiwan and United Kingdom. M. Passlack's co-authors include M. Hong, J. P. Mannáerts, Ravi Droopad, J. Abrokwah, N. Moriya, E. Fred Schubert, S. N. G. Chu, G. J. Zydzik, K. Rajagopalan and G. Doornbos and has published in prestigious journals such as The Journal of Chemical Physics, Nano Letters and Applied Physics Letters.

In The Last Decade

M. Passlack

122 papers receiving 3.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Passlack United States 31 2.8k 1.6k 999 981 409 124 3.5k
D. M. Schaadt Germany 18 1.1k 0.4× 952 0.6× 674 0.7× 661 0.7× 813 2.0× 101 2.1k
Rusen Yan United States 19 2.2k 0.8× 2.4k 1.6× 980 1.0× 869 0.9× 1.2k 3.0× 30 4.1k
Dennis E. Walker United States 23 970 0.3× 813 0.5× 878 0.9× 503 0.5× 829 2.0× 77 2.1k
Saroj P. Dash Sweden 27 1.3k 0.4× 2.3k 1.5× 314 0.3× 1.7k 1.7× 230 0.6× 75 3.2k
Yasufumi Fujiwara Japan 20 1.1k 0.4× 1.2k 0.8× 558 0.6× 621 0.6× 214 0.5× 171 1.9k
Marco Bianchi Denmark 33 914 0.3× 2.9k 1.9× 337 0.3× 1.7k 1.7× 185 0.5× 99 3.3k
Babak Fallahazad United States 19 1.5k 0.5× 3.4k 2.2× 384 0.4× 1.1k 1.1× 772 1.9× 31 3.9k
Søren Ulstrup Denmark 25 926 0.3× 2.1k 1.4× 298 0.3× 789 0.8× 253 0.6× 62 2.5k
E. Popova France 24 807 0.3× 633 0.4× 733 0.7× 970 1.0× 142 0.3× 73 1.6k
Adam W. Tsen Canada 20 930 0.3× 2.5k 1.6× 659 0.7× 938 1.0× 315 0.8× 40 2.9k

Countries citing papers authored by M. Passlack

Since Specialization
Citations

This map shows the geographic impact of M. Passlack's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Passlack with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Passlack more than expected).

Fields of papers citing papers by M. Passlack

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Passlack. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Passlack. The network helps show where M. Passlack may publish in the future.

Co-authorship network of co-authors of M. Passlack

This figure shows the co-authorship network connecting the top 25 collaborators of M. Passlack. A scholar is included among the top collaborators of M. Passlack based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Passlack. M. Passlack is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Safron, Nathaniel S., M. Passlack, Sheng‐Kai Su, et al.. (2025). Overcoming the Leakage and Contact Resistance Challenges in Highly Scaled PMOS and NMOS Carbon Nanotube Transistors. Nano Letters. 25(10). 3981–3988. 3 indexed citations
2.
Passlack, M., Ajay K. Yadav, Keith T. Wong, et al.. (2025). Si-doped HZO and ZrO2 for hysteresis free high-k dielectric. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 43(2). 1 indexed citations
3.
Passlack, M., Nujhat Tasneem, Chinsung Park, et al.. (2024). The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors. Journal of Applied Physics. 135(13). 3 indexed citations
4.
Tasneem, Nujhat, Zheng Wang, Zijian Zhao, et al.. (2022). Efficiency of Ferroelectric Field-Effect Transistors: An Experimental Study. IEEE Transactions on Electron Devices. 69(3). 1568–1574. 9 indexed citations
5.
Lin, Qing, Gregory Pitner, Sheng‐Kai Su, et al.. (2022). Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs. IEEE Electron Device Letters. 43(3). 490–493. 13 indexed citations
6.
Huang, Fei, M. Passlack, Zhouchangwan Yu, et al.. (2021). Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors. IEEE Electron Device Letters. 43(2). 212–215. 6 indexed citations
7.
Pitner, Gregory, Zichen Zhang, Qing Lin, et al.. (2020). Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length. 3.5.1–3.5.4. 27 indexed citations
8.
Vasen, T., P. Ramvall, Aryan Afzalian, et al.. (2016). InAs nanowire GAA n-MOSFETs with 12–15 nm diameter. Lund University Publications (Lund University). 1–2. 15 indexed citations
9.
Li, X., S. W. Chang, T. Vasen, et al.. (2016). InAs FinFETs With Hfinnm Fabricated Using a Top–Down Etch Process. IEEE Electron Device Letters. 37(3). 261–264. 19 indexed citations
10.
Rojas-Ramírez, Juan Salvador, R. Contreras‐Guerrero, M. Holland, et al.. (2015). Al In1−As Sb1− alloys lattice matched to InAs(1 0 0) grown by molecular beam epitaxy. Journal of Crystal Growth. 425. 33–38. 5 indexed citations
11.
Dal, M.J.H. van, G. Vellianitis, B. Duriez, et al.. (2014). Germanium p-Channel FinFET Fabricated by Aspect Ratio Trapping. IEEE Transactions on Electron Devices. 61(2). 430–436. 48 indexed citations
12.
Doornbos, G., Krishna K. Bhuwalka, R. Contreras‐Guerrero, et al.. (2013). InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces. Applied Physics Letters. 103(14). 30 indexed citations
13.
Grassman, Tyler J., et al.. (2007). Direct and indirect causes of Fermi level pinning at the SiO∕GaAs interface. The Journal of Chemical Physics. 126(8). 84703–84703. 21 indexed citations
14.
Kálna, K., Asen Asenov, & M. Passlack. (2006). Monte Carlo Simulation of Implant Free InGaAs MOSFET. Journal of Physics Conference Series. 38. 200–203. 3 indexed citations
15.
Passlack, M., K. Rajagopalan, J. Abrokwah, & Ravi Droopad. (2006). Implant-free high-mobility flatband MOSFET: principles of operation. IEEE Transactions on Electron Devices. 53(10). 2454–2459. 28 indexed citations
16.
Yi, Seho, et al.. (2003). Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4). The Journal of Chemical Physics. 119(13). 6719–6728. 121 indexed citations
17.
Passlack, M., Zhiyi Yu, Ravi Droopad, et al.. (1999). Interface charge and nonradiative carrier recombination in Ga2O3–GaAs interface structures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(1). 49–52. 16 indexed citations
18.
Passlack, M., et al.. (1998). Nonradiative recombination at GaAs homointerfaces fabricated using an As cap deposition/removal process. Applied Physics Letters. 72(24). 3163–3165. 1 indexed citations
19.
Hong, M., J. P. Mannáerts, J. E. Bower, et al.. (1997). Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces. Journal of Crystal Growth. 175-176. 422–427. 67 indexed citations
20.
Passlack, M., M. Hong, & J. P. Mannáerts. (1996). Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy. Applied Physics Letters. 68(8). 1099–1101. 193 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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