M. Passlack
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- Ga2O3 and related materials 32
-
- Semiconductor materials and devices 111
- Advancements in Semiconductor Devices and Circuit Design 55
- Ferroelectric and Negative Capacitance Devices 17
- Materials Chemistry top 5%
- Electronic and Structural Properties of Oxides 22
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- Semiconductor Quantum Structures and Devices 19
- Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 17
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- Nanowire Synthesis and Applications 19
- Co-authors
- M. HongJ. P. MannáertsRavi DroopadJ. AbrokwahN. MoriyaE. Fred SchubertS. N. G. ChuG. J. Zydzik
- Cited by
- Electronic, Optical and Magnetic MaterialsElectrical and Electronic EngineeringMaterials Chemistry
- Journals
- Applied Physics Letters (17 papers)IEEE Electron Device Letters (15 papers)Journal of Crystal Growth (8 papers)
- Partner nations
- United StatesTaiwanUnited Kingdom
In The Last Decade
M. Passlack
122 papers receiving 3.3k citations
Peers
Comparison fields: 5 of 42
- Electronic, Optical and Magnetic Materials 999
- Electrical and Electronic Engineering 2.8k
- Materials Chemistry 1.6k
- Atomic and Molecular Physics, and Optics 981
- Condensed Matter Physics 366
Countries citing papers authored by M. Passlack
This map shows the geographic impact of M. Passlack's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Passlack with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Passlack more than expected).
Fields of papers citing papers by M. Passlack
This network shows the impact of papers produced by M. Passlack. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Passlack. The network helps show where M. Passlack may publish in the future.
Co-authorship network
The 25 scholars most cited alongside M. Passlack, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2025 | 1 | |
| 2 | 2025 | 3 | |
| 3 | 2024 | 3 | |
| 4 | 2022 | 13 | |
| 5 | 2022 | 9 | |
| 6 | 2021 | 6 | |
| 7 | 2020 | 27 | |
| 8 | 2019 | 37 | |
| 9 | 2018 | 14 | |
| 10 | 2017 | 5 | |
| 11 | 2016 | 19 | |
| 12 | 2016 | 12 | |
| 13 | 2007 | 45 | |
| 14 | 2006 | 3 | |
| 15 | 2006 | 28 | |
| 16 | 2005 | 68 | |
| 17 | 2003 | 40 | |
| 18 | 1997 | 67 | |
| 19 | 1996 | 193 | |
| 20 | 1994 | 20 |
About M. Passlack
M. Passlack is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Condensed Matter Physics, having authored 124 papers that have together received 3.5k indexed citations. Recurring topics across this work include Semiconductor materials and devices (111 papers), Advancements in Semiconductor Devices and Circuit Design (55 papers), Ga2O3 and related materials (32 papers), Electronic and Structural Properties of Oxides (22 papers), Semiconductor Quantum Structures and Devices (19 papers), Nanowire Synthesis and Applications (19 papers), Ferroelectric and Negative Capacitance Devices (17 papers) and GaN-based semiconductor devices and materials (17 papers). The work is most often cited by research in Electronic, Optical and Magnetic Materials (999 citations), Electrical and Electronic Engineering (2.8k citations) and Materials Chemistry (1.6k citations). M. Passlack has collaborated with scholars based in United States, Taiwan and United Kingdom. Frequent co-authors include M. Hong, J. P. Mannáerts, Ravi Droopad, J. Abrokwah, N. Moriya, E. Fred Schubert, S. N. G. Chu, G. J. Zydzik, K. Rajagopalan and G. Doornbos. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Journal of Crystal Growth, IEEE Transactions on Electron Devices and Journal of Applied Physics.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.