T. Vasen

928 total citations
26 papers, 708 citations indexed

About

T. Vasen is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Condensed Matter Physics. According to data from OpenAlex, T. Vasen has authored 26 papers receiving a total of 708 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 11 papers in Biomedical Engineering and 7 papers in Condensed Matter Physics. Recurrent topics in T. Vasen's work include Advancements in Semiconductor Devices and Circuit Design (18 papers), Semiconductor materials and devices (18 papers) and Nanowire Synthesis and Applications (10 papers). T. Vasen is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (18 papers), Semiconductor materials and devices (18 papers) and Nanowire Synthesis and Applications (10 papers). T. Vasen collaborates with scholars based in United States, Taiwan and Sweden. T. Vasen's co-authors include Huili Grace Xing, Alan Seabaugh, Patrick Fay, Mark A. Wistey, Guangle Zhou, Yeqing Lu, Rui Li, Qingmin Liu, Qin Zhang and Tom Kosel and has published in prestigious journals such as Applied Physics Letters, Scientific Reports and Journal of Physics Condensed Matter.

In The Last Decade

T. Vasen

25 papers receiving 685 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
T. Vasen United States	13	641	278	90	79	60	26	708
B. Chu-Kung United States	13	842 1.3×	253 0.9×	193 2.1×	53 0.7×	123 2.0×	17	873
Anurag Vohra Belgium	11	254 0.4×	60 0.2×	92 1.0×	72 0.9×	41 0.7×	35	289
Jack Kramer United States	11	156 0.2×	260 0.9×	86 1.0×	64 0.8×	119 2.0×	28	279
T. Hoffman Belgium	6	449 0.7×	146 0.5×	73 0.8×	13 0.2×	85 1.4×	10	495
Swaroop Ganguly India	8	437 0.7×	106 0.4×	44 0.5×	87 1.1×	31 0.5×	9	478
Sinwoo Cho United States	11	157 0.2×	268 1.0×	90 1.0×	65 0.8×	121 2.0×	32	286
X. Garros France	18	998 1.6×	82 0.3×	137 1.5×	56 0.7×	128 2.1×	105	1.0k
M. Carroll United States	13	502 0.8×	224 0.8×	265 2.9×	22 0.3×	96 1.6×	28	550
Paul M. Jordan Germany	10	397 0.6×	82 0.3×	93 1.0×	35 0.4×	115 1.9×	21	421
Chris Haapamaki Canada	9	209 0.3×	262 0.9×	171 1.9×	56 0.7×	123 2.0×	14	344

Countries citing papers authored by T. Vasen

Since Specialization

Citations

This map shows the geographic impact of T. Vasen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Vasen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Vasen more than expected).

Fields of papers citing papers by T. Vasen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Vasen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Vasen. The network helps show where T. Vasen may publish in the future.

Co-authorship network of co-authors of T. Vasen

This figure shows the co-authorship network connecting the top 25 collaborators of T. Vasen. A scholar is included among the top collaborators of T. Vasen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Vasen. T. Vasen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Nomoto, Kazuki, Joseph Casamento, Lei Li, et al.. (2025). AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz. Applied Physics Express. 18(1). 16506–16506. 11 indexed citations

Uren, Michael J., et al.. (2023). Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors. IEEE Electron Device Letters. 44(11). 1821–1824. 2 indexed citations

Casamento, Joseph, et al.. (2022). Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions. Applied Physics Letters. 121(19). 39 indexed citations

Vasen, T., et al.. (2022). Ultra-low resistance n+GaN contacts for GaN HEMT applications using MOCVD selective area epitaxy in N2 carrier gas. AIP Advances. 12(3). 4 indexed citations

Vasen, T., Ken A. Nagamatsu, Virginia D. Wheeler, et al.. (2022). SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process. 120–123. 2 indexed citations

Vasen, T., P. Ramvall, Aryan Afzalian, et al.. (2019). Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs. Scientific Reports. 9(1). 202–202. 37 indexed citations

Ramvall, P., et al.. (2019). Sn Incorporation in Ultrathin InAs Nanowires for Next-Generation Transistors Characterized by Atom Probe Tomography. ACS Applied Nano Materials. 2(3). 1253–1258. 4 indexed citations

Afzalian, Aryan, et al.. (2018). Physics and performances of III–V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations. Journal of Physics Condensed Matter. 30(25). 254002–254002. 14 indexed citations

Dal, M.J.H. van, G. Vellianitis, G. Doornbos, et al.. (2018). Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs. 21.1.1–21.1.4. 36 indexed citations

10.

Holland, M., Mark van Dal, B. Duriez, et al.. (2017). Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration. Scientific Reports. 7(1). 14632–14632. 5 indexed citations

11.

Li, X., S. W. Chang, T. Vasen, et al.. (2016). InAs FinFETs With H_finnm Fabricated Using a Top–Down Etch Process. IEEE Electron Device Letters. 37(3). 261–264. 19 indexed citations

12.

Vasen, T., P. Ramvall, Aryan Afzalian, et al.. (2016). InAs nanowire GAA n-MOSFETs with 12–15 nm diameter. Lund University Publications (Lund University). 1–2. 15 indexed citations

13.

Zhou, Guangle, Yeqing Lu, Rui Li, et al.. (2012). InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$. IEEE Electron Device Letters. 33(6). 782–784. 75 indexed citations

14.

Lu, Yeqing, Guangle Zhou, Rui Li, et al.. (2012). Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned. IEEE Electron Device Letters. 33(5). 655–657. 98 indexed citations

15.

Zhou, Guangle, T. Vasen, Meng Qi, et al.. (2012). Novel gate-recessed vertical InAs/GaSb TFETs with record high I<inf>ON</inf> of 180 μA/μm at V<inf>DS</inf> = 0.5 V. 32.6.1–32.6.4. 102 indexed citations

16.

Li, Rui, Yeqing Lu, Guangle Zhou, et al.. (2012). AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 $\mu\hbox{A}/\mu\hbox{m}$ at 0.5 V. IEEE Electron Device Letters. 33(3). 363–365. 113 indexed citations

17.

Seabaugh, Alan, Soo Doo Chae, Patrick Fay, et al.. (2011). III-V Tunnel Field-Effect Transistors. ECS Meeting Abstracts. MA2011-02(32). 2130–2130. 1 indexed citations

18.

Zhou, Guangle, Yeqing Lu, Rui Li, et al.. (2011). Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the Gate. IEEE Electron Device Letters. 32(11). 1516–1518. 56 indexed citations

19.

Zhou, Guangle, Yeqing Lu, Wan-Sik Hwang, et al.. (2011). Self-aligned InAs/Al<inf>0.45</inf>Ga<inf>0.55</inf>Sb vertical tunnel FETs. 205–206. 15 indexed citations

20.

Seabaugh, Alan, Soo Doo Chae, Patrick Fay, et al.. (2011). (Invited) III-V Tunnel Field-Effect Transistors. ECS Transactions. 41(7). 227–229. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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