Yee‐Chia Yeo
About
In The Last Decade
Yee‐Chia Yeo
488 papers receiving 10.3k citations
Hit Papers
Peers
Comparison fields: 5 of 77
- Electrical and Electronic Engineering 9.4k
- Atomic and Molecular Physics, and Optics 2.9k
- Materials Chemistry 2.8k
- Biomedical Engineering 2.1k
- Electronic, Optical and Magnetic Materials 776
Countries citing papers authored by Yee‐Chia Yeo
This map shows the geographic impact of Yee‐Chia Yeo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yee‐Chia Yeo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yee‐Chia Yeo more than expected).
Fields of papers citing papers by Yee‐Chia Yeo
This network shows the impact of papers produced by Yee‐Chia Yeo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yee‐Chia Yeo. The network helps show where Yee‐Chia Yeo may publish in the future.
Co-authorship network of co-authors of Yee‐Chia Yeo
This figure shows the co-authorship network connecting the top 25 collaborators of Yee‐Chia Yeo. A scholar is included among the top collaborators of Yee‐Chia Yeo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yee‐Chia Yeo. Yee‐Chia Yeo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 1 | |
| 2 | 1 | |
| 3 | 5 | |
| 4 | 23 | |
| 5 | 17 | |
| 6 | 19 | |
| 7 | 24 | |
| 8 | 2 | |
| 9 | Uniaxially strained germanium-tin (GeSn) gate-all-around nanowire PFETs enabled by a novel top-down nanowire formation technology | 9 |
| 10 | A new expandible ZnS-SiO 2 liner stressor for n-channel FinFETs | 1 |
| 11 | 16 | |
| 12 | 49 | |
| 13 | Novel tellurium co-implantation and segregation for effective source/drain contact resistance reduction and gate work function modulation in n-FinFETs | 4 |
| 14 | 6 | |
| 15 | 33 | |
| 16 | Gate-all-around quantum-wire field-effect transistor with Dopant Segregation at Metal-Semiconductor-Metal heterostucture | 7 |
| 17 | Single silicide comprising Nickel-Dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by Aluminum implant | 4 |
| 18 | Strained In 0.53 Ga 0.47 As n-MOSFETs: Performance boost with in-situ doped lattice-mismatched source/drain stressors and interface engineering | 9 |
| 19 | 150 | |
| 20 | 6 |
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.