L. Kehias

1.3k total citations · 1 hit paper
22 papers, 1.1k citations indexed

About

L. Kehias is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, L. Kehias has authored 22 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 15 papers in Condensed Matter Physics and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in L. Kehias's work include Radio Frequency Integrated Circuit Design (21 papers), GaN-based semiconductor devices and materials (15 papers) and Semiconductor Quantum Structures and Devices (6 papers). L. Kehias is often cited by papers focused on Radio Frequency Integrated Circuit Design (21 papers), GaN-based semiconductor devices and materials (15 papers) and Semiconductor Quantum Structures and Devices (6 papers). L. Kehias collaborates with scholars based in United States. L. Kehias's co-authors include T. Jenkins, Scott T. Allen, W.L. Pribble, John W. Palmour, K. Doverspike, S.T. Sheppard, Umesh K. Mishra, Yifeng Wu, Steven P. DenBaars and B.P. Keller and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Microwave Theory and Techniques and IEEE Transactions on Electron Devices.

In The Last Decade

L. Kehias

21 papers receiving 1.1k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

1999 462 citations S.T. Sheppard, K. Doverspike et al. IEEE Electron Device Letters profile →

Peers

Countries citing papers authored by L. Kehias

Since Specialization

Citations

This map shows the geographic impact of L. Kehias's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Kehias with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Kehias more than expected).

Fields of papers citing papers by L. Kehias

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Kehias. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Kehias. The network helps show where L. Kehias may publish in the future.

Co-authorship network of co-authors of L. Kehias

This figure shows the co-authorship network connecting the top 25 collaborators of L. Kehias. A scholar is included among the top collaborators of L. Kehias based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Kehias. L. Kehias is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Wideband, High-Efficiency GaN Power Amplifiers Utilizing a Non-Uniform Distributed Topology 2007 ·IEEE MTT-S International Microwave Symposium digest ·(unknown), Paul Watson, L. Kehias, (unknown)	62
2	High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs 2003 ·P. Parikh, Yifeng Wu, M. Moore, P. Chavarkar, Umesh K. Mishra, R. Neidhard, L. Kehias, T. Jenkins	25
3	Linearity of high Al-content AlGaN/GaN HEMTs 2002 ·T. Jenkins, L. Kehias, P. Parikh, Yifeng Wu, P. Chavarkar, M. Moore, Umesh K. Mishra	5
4	Broadband class-E power amplifier for space radar application 2002 ·Zenodo (CERN European Organization for Nuclear Research) ·T. Quach, Paul Watson, W. Okamura, E. Kaneshiro, A.L. Gutierrez-Aitken, T. Block, (unknown), T. Jenkins, L. Kehias, A.K. Oki, D. Sawdai, (unknown), (unknown)	7
5	Power performance of thermally-shunted heterojunction bipolar transistors 2002 ·T. Jenkins, C. Bozada, (unknown), G. DeSalvo, R. Dettmer, J. Ebel, J. Gillespie, (unknown), L. Kehias, K. Nakano, C. Pettiford, T. Quach, J. Sewell, D. Via, R. Anholt	1
6	High speed and high power AlGaN/GaN MODFETs 2002 ·Yifeng Wu, B.P. Keller, S. Keller, Nam Nguyen, Minh T. N. Le, C. Nguyen, T. Jenkins, L. Kehias, Steven P. DenBaars, Umesh K. Mishra	2
7	Ultra-high efficiency operation based on an alternative class-E mode 2002 ·Paul Watson, R. Neidhard, L. Kehias, (unknown), T. Quach, (unknown), (unknown), (unknown), Robert Schweller, T. Jenkins	12
8	Ultrahigh-efficiency power amplifier for space radar applications 2002 ·IEEE Journal of Solid-State Circuits ·T. Quach, Paul Watson, W. Okamura, E. Kaneshiro, A.L. Gutierrez-Aitken, T. Block, (unknown), T. Jenkins, L. Kehias, A.K. Oki, D. Sawdai, (unknown), (unknown)	23
9	Ultra-efficient X-band and linear-efficient Ka-band power amplifiers using indium phosphide double heterojunction bipolar transistors 2002 ·T. Quach, W. Okamura, A.L. Gutierrez-Aitken, T. Jenkins, E. Kaneshiro, L. Kehias, D. Sawdai, Paul Watson, (unknown), (unknown), H.C. Yen	4
10	Low noise hybrid amplifier using AlGaN/GaN power HEMT devices 2002 ·Zenodo (CERN European Organization for Nuclear Research) ·(unknown), T. Jenkins, (unknown), L. Kehias, T. Quach, Paul Watson, (unknown), M. Barsky, Rajinder Sandhu, M. Wójtowicz	4
11	SiC MESFET with output power of 50 watts CW at S-band 2002 ·R.A. Sadler, Scott T. Allen, (unknown), W.L. Pribble, Joseph J. Sumakeris, John W. Palmour, L. Kehias	9
12	Design and fabrication of thermally-stable AlGaAs/GaAs microwave power HBTs 2002 ·B. Bayraktaroglu, Robert Fitch, (unknown), (unknown), L. Kehias, C.I. Huang	10
13	Highest efficiency, linear X-band performance using InP DHBTs - 48% PAE at 30 dB C/IM3 2001 ·IEEE Microwave and Wireless Components Letters ·L. Kehias, T. Jenkins, T. Quach, Paul Watson, (unknown), (unknown), A.K. Oki, H.C. Yen, A. Gutierrez-Aitken, W. Okamura, E. Kaneshiro	3
14	Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology 1999 ·IEEE Journal of Solid-State Circuits ·T. Jenkins, L. Kehias, P. Parikh, J. P. Ibbetson, Umesh K. Mishra, (unknown), Minh Vuong Le, J. Pusl, (unknown)	3
15	High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates breakdown → 1999 ·IEEE Electron Device Letters ·S.T. Sheppard, K. Doverspike, W.L. Pribble, Scott T. Allen, John W. Palmour, L. Kehias, T. Jenkins	462
16	Record power-added-efficiency, low-voltage GOI (GaAs on insulator) MESFET technology for wireless applications 1998 ·IEEE Transactions on Microwave Theory and Techniques ·P. Parikh, J. P. Ibbetson, Umesh K. Mishra, (unknown), Minh‐Quyen Le, (unknown), D.E. Grider, J. Pusl, (unknown), L. Kehias, T. Jenkins	1
17	Microwave performance of AlGaN/GaN inverted MODFET's 1997 ·IEEE Electron Device Letters ·Özgür Aktaş, Z. Fan, A. Botchkarev, S. Noor Mohammad, M. Roth, T. Jenkins, L. Kehias, H. Morkoç̌	87
18	Thermally stable AlGaAs/GaAs microwave power HBT's 1993 ·IEEE Transactions on Electron Devices ·B. Bayraktaroglu, (unknown), Robert Fitch, L. Kehias, C.I. Huang, R. Neidhard, (unknown)	4
19	Microwave operation of high power InGaP/GaAs heterojunction bipolar transistors 1993 ·Electronics Letters ·M. Mack, B. Bayraktaroglu, L. Kehias, (unknown), R. Neidhard, Robert Fitch, (unknown), (unknown), (unknown)	4
20	Very high-power-density CW operation of GaAs/AlGaAs microwave heterojunction bipolar transistors 1993 ·IEEE Electron Device Letters ·B. Bayraktaroglu, (unknown), L. Kehias, C.I. Huang, Robert Fitch, R. Neidhard, (unknown)	65

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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