John W. Palmour

14.0k total citations · 5 hit papers
402 papers, 11.4k citations indexed

About

John W. Palmour is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, John W. Palmour has authored 402 papers receiving a total of 11.4k indexed citations (citations by other indexed papers that have themselves been cited), including 397 papers in Electrical and Electronic Engineering, 76 papers in Atomic and Molecular Physics, and Optics and 35 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in John W. Palmour's work include Silicon Carbide Semiconductor Technologies (381 papers), Semiconductor materials and devices (160 papers) and Multilevel Inverters and Converters (94 papers). John W. Palmour is often cited by papers focused on Silicon Carbide Semiconductor Technologies (381 papers), Semiconductor materials and devices (160 papers) and Multilevel Inverters and Converters (94 papers). John W. Palmour collaborates with scholars based in United States, China and Russia. John W. Palmour's co-authors include Anant Agarwal, Sei‐Hyung Ryu, Ranbir Singh, Scott T. Allen, Lori A. Lipkin, Mrinal K. Das, M. E. Levinshteĭn, Jim Richmond, R. F. Davis and Lin Cheng and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

John W. Palmour

392 papers receiving 10.8k citations

Hit Papers

5 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

2001 538 citations John W. Palmour et al. IEEE Electron Device Letters profile →
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

1999 462 citations Scott T. Allen, John W. Palmour et al. IEEE Electron Device Letters profile →
Status and prospects for SiC power MOSFETs

2002 416 citations Ranbir Singh, Anant Agarwal et al. IEEE Transactions on Electron Devices profile →
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

1991 317 citations R. F. Davis, M. S. Shur et al. profile →
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

1988 189 citations R. F. Davis, John W. Palmour et al. profile →

Peers

Countries citing papers authored by John W. Palmour

Since Specialization

Citations

This map shows the geographic impact of John W. Palmour's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John W. Palmour with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John W. Palmour more than expected).

Fields of papers citing papers by John W. Palmour

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John W. Palmour. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John W. Palmour. The network helps show where John W. Palmour may publish in the future.

Co-authorship network of co-authors of John W. Palmour

This figure shows the co-authorship network connecting the top 25 collaborators of John W. Palmour. A scholar is included among the top collaborators of John W. Palmour based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with John W. Palmour. John W. Palmour is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Reliability and Standardization for SiC Power Devices 2023 ·Materials science forum ·D. A. Gajewski, Satyaki Ganguly, Daniel J. Lichtenwalner, Edward Van Brunt, Brett Hull, Scott T. Allen, John W. Palmour	3
2	650V Vertical SiC MOSFETs and Diodes with Improved Terrestrial-Neutron Single-Event Burnout 2023 ·Key engineering materials ·Daniel J. Lichtenwalner, Satyaki Ganguly, (unknown), (unknown), D. A. Gajewski, Sei‐Hyung Ryu, Brett Hull, Scott T. Allen, John W. Palmour	1
3	Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs 2023 ·Materials science forum ·Daniel J. Lichtenwalner, Sei‐Hyung Ryu, Brett Hull, Scott T. Allen, John W. Palmour	4
4	Ultra-low (1.25mΩ) On-Resistance 900V SiC 62mm Half- Bridge Power Modules Using New 10mΩ SiC MOSFETs 2016 ·(unknown), Vipindas Pala, Edward Van Brunt, Brett Hull, Sei‐Hyung Ryu, Gangyao Wang, Jim Richmond, Scott T. Allen, D.E. Grider, John W. Palmour, (unknown), Brice McPherson, K.J. Olejniczak, Brandon Passmore, (unknown)	4
5	SiC power device reliability 2016 ·D. A. Gajewski, Brett Hull, Daniel J. Lichtenwalner, Sei‐Hyung Ryu, (unknown), (unknown), Gangyao Wang, Scott T. Allen, John W. Palmour	49
6	New Generation 10kV SiC Power MOSFET and Diodes for Industrial Applications 2015 ·(unknown), Vipindas Pala, Daniel J. Lichtenwalner, Edward Van Brunt, Brett Hull, Gangyao Wang, Jim Richmond, Scott T. Allen, D.E. Grider, John W. Palmour	79
7	Silicon carbide power device development for industrial markets 2014 ·John W. Palmour	137
8	純誘導負荷回路における高電流に対する4H-SiCサイリスタ(18kV級)の光学的トリガー 2014 ·Semiconductor Science and Technology ·S. L. Rumyantsev, M. E. Levinshteĭn, Tanuj Saxena, M. S. Shur, (unknown), John W. Palmour, (unknown)	22
9	10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems 2014 ·Vipindas Pala, Edward Van Brunt, Lin Cheng, Michael O’Loughlin, Jim Richmond, Albert A. Burk, Scott T. Allen, David Grider, John W. Palmour, Charles Scozzie	127
10	Ultra High Voltage SiC Power Devices and Its Impact on Future Power Delivery System 2014 ·Alex Q. Huang, Lin Cheng, John W. Palmour, Charles Scozzie	7
11	22 kV, 1 cm², 4H-SiC n-IGBTs with improved conductivity modulation 2014 ·Edward Van Brunt, Scott T. Allen, Albert A. Burk, John W. Palmour, Charles Scozzie, Lin Cheng, Michael O’Loughlin, Craig Capell, Charlotte Jonas, (unknown), Jim Richmond, Vipindas Pala, Sei‐Hyung Ryu	68
12	Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV 2014 ·John W. Palmour, Lin Cheng, Vipindas Pala, Edward Van Brunt, Daniel J. Lichtenwalner, (unknown), Jim Richmond, Michael O’Loughlin, Sei‐Hyung Ryu, Scott T. Allen, Albert A. Burk, Charles Scozzie	241
13	Temperature dependence of On-state characteristics, and Switching characteristics of 5 kV class 4H-SiC SEJFET 2005 ·IEEJ Transactions on Industry Applications ·Katsunori Asano, Toshihiko Hayashi, (unknown), Yoshitaka Sugawara, Sei‐Hyung Ryu, John W. Palmour	9
14	Electric Characteristics of 5 kV Novel 4H-SiC "SEMOSFET" 2005 ·IEEJ Transactions on Industry Applications ·(unknown), Toshihiko Hayashi, (unknown), Yoshitaka Sugawara, Sei‐Hyung Ryu, John W. Palmour	2
15	10 kV, 123 m {Ω}-cm2 4H-SiC Power DMOSFETs 2004 ·IEEE Electron Device Letters ·Sei‐Hyung Ryu, Sumi Krishnaswami, Michael O’Loughlin, (unknown), Anant Agarwal, John W. Palmour, Allen R. Hefner	2
16	Dynamic Characteristics of 6.2 kV High Voltage 4H-SiC pn Diode with Low Loss 2003 ·IEEJ Transactions on Industry Applications ·Katsunori Asano, Toshihiko Hayashi, (unknown), Yoshitaka Sugawara, Ranbir Singh, John W. Palmour	0
17	High-Power 4H-SiC JBS Rectifiers \| NIST 2002 ·IEEE Transactions on Electron Devices ·Ranbir Singh, (unknown), Allen R. Hefner, Jih‐Sheng Lai, John W. Palmour	0
18	High voltage SiC diodes with small recovery time 2000 ·Electronics Letters ·M. E. Levinshteĭn, T. T. Mnatsakanov, P. A. Ivanov, John W. Palmour, S. L. Rumyantsev, Ranbir Singh, S. N. Yurkov	27
19	1/f noise in 6H-SiC 1993 ·Technical Physics Letters ·M. E. Levinshteĭn, S. L. Rumyantsev, John W. Palmour	6
20	Dry etching of beta-SiC in CF4 and CF4 + O2 mixtures 1986 ·Journal of Vacuum Science and Technology ·John W. Palmour, R. F. Davis, (unknown), K. B. Bhasin	2

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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