M. Wójtowicz

1.2k total citations
73 papers, 893 citations indexed

About

M. Wójtowicz is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, M. Wójtowicz has authored 73 papers receiving a total of 893 indexed citations (citations by other indexed papers that have themselves been cited), including 73 papers in Electrical and Electronic Engineering, 57 papers in Atomic and Molecular Physics, and Optics and 23 papers in Condensed Matter Physics. Recurrent topics in M. Wójtowicz's work include Semiconductor Quantum Structures and Devices (50 papers), Radio Frequency Integrated Circuit Design (32 papers) and Semiconductor materials and devices (32 papers). M. Wójtowicz is often cited by papers focused on Semiconductor Quantum Structures and Devices (50 papers), Radio Frequency Integrated Circuit Design (32 papers) and Semiconductor materials and devices (32 papers). M. Wójtowicz collaborates with scholars based in United States, Taiwan and Israel. M. Wójtowicz's co-authors include D.C. Streit, Ioulia Smorchkova, A.K. Oki, R. Lai, B. Heying, T. Block, Y.C. Chou, Mark S. Goorsky, R. Tsai and D. Leung and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

M. Wójtowicz

71 papers receiving 832 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Wójtowicz United States 17 825 474 428 90 71 73 893
Chanh Nguyen United States 14 428 0.5× 529 1.1× 370 0.9× 106 1.2× 52 0.7× 29 722
S. Yamahata Japan 16 715 0.9× 410 0.9× 146 0.3× 59 0.7× 86 1.2× 74 793
O. Imafuji Japan 12 306 0.4× 277 0.6× 262 0.6× 116 1.3× 33 0.5× 35 455
Bart Van Zeghbroeck United States 14 449 0.5× 190 0.4× 261 0.6× 136 1.5× 66 0.9× 49 579
Shinichi Takigawa Japan 11 315 0.4× 297 0.6× 303 0.7× 62 0.7× 79 1.1× 34 461
J. Kolník United States 9 549 0.7× 378 0.8× 592 1.4× 103 1.1× 59 0.8× 26 769
Hideto Sugawara Japan 12 646 0.8× 636 1.3× 321 0.8× 171 1.9× 61 0.9× 25 787
K. Horio Japan 19 993 1.2× 462 1.0× 715 1.7× 124 1.4× 35 0.5× 104 1.1k
C. Brylinski France 16 787 1.0× 549 1.2× 101 0.2× 77 0.9× 31 0.4× 46 835
K. Hikosaka Japan 21 1.3k 1.5× 891 1.9× 337 0.8× 112 1.2× 131 1.8× 67 1.4k

Countries citing papers authored by M. Wójtowicz

Since Specialization
Citations

This map shows the geographic impact of M. Wójtowicz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Wójtowicz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Wójtowicz more than expected).

Fields of papers citing papers by M. Wójtowicz

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Wójtowicz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Wójtowicz. The network helps show where M. Wójtowicz may publish in the future.

Co-authorship network of co-authors of M. Wójtowicz

This figure shows the co-authorship network connecting the top 25 collaborators of M. Wójtowicz. A scholar is included among the top collaborators of M. Wójtowicz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Wójtowicz. M. Wójtowicz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Smorchkova, Ioulia, Vincent Gambin, R. Tsai, et al.. (2010). A 1–25 GHz GaN HEMT MMIC Low-Noise Amplifier. IEEE Microwave and Wireless Components Letters. 20(10). 563–565. 55 indexed citations
2.
3.
Mei, X. B., Y.C. Chou, Jun-Yao Yang, et al.. (2009). Sub-mW Operation of InP HEMT X-Band Low-Noise Amplifiers for Low Power Applications. 1–4. 10 indexed citations
4.
Deal, W.R., Daisuke Yamauchi, Ioulia Smorchkova, et al.. (2009). Design and analysis of ultra wideband GaN dual-gate HEMT low noise amplifiers. 14. 669–672. 13 indexed citations
5.
Deal, W.R., et al.. (2007). Broadband GaN Dual-Gate HEMT Low Noise Amplifier. 1–4. 26 indexed citations
6.
7.
Lai, R., Y.C. Chou, P.H. Liu, et al.. (2007). High Performance and High Reliability of 0.1μm InP HEMT MMIC Technology on 100 mm InP Substrates. 44. 63–66. 4 indexed citations
8.
Coffie, R., Ioulia Smorchkova, M. Wójtowicz, et al.. (2006). Impact of A1N Interalayer on Reliability of AlGaN/GaN HEMTS. 99–102. 9 indexed citations
9.
Chou, Y.C., R. Lai, D. Leung, et al.. (2006). Gate Sinking Effect of 0. 1 /spl mu/m InP HEMT MMICs Using Pt/Ti/Pt/Au. 188–191. 4 indexed citations
10.
Sandhu, Rajinder, et al.. (2005). Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity. Journal of Physics D Applied Physics. 38(10A). A174–A178. 7 indexed citations
11.
Streit, D.C., A. Gutierrez-Aitken, M. Wójtowicz, & R. Lai. (2005). The future of compound semiconductors for aerospace and defense applications. 4 pp.–4 pp.. 8 indexed citations
12.
Goorsky, Mark S., et al.. (2005). Processing issues for wafer bonded III-V on insulator structures. 26. 358–361. 1 indexed citations
13.
Smorchkova, Ioulia, M. Wójtowicz, Rajinder Sandhu, et al.. (2003). AlGaN/GaN HEMTs---operation in the K-band and above. IEEE Transactions on Microwave Theory and Techniques. 51(2). 665–668. 26 indexed citations
14.
Oki, A.K., D.C. Streit, R. Lai, et al.. (2002). InP HBT and HEMT technology and applications. 7–8. 1 indexed citations
15.
Block, Thomas, et al.. (1998). Multiwafer molecular beam epitaxy for high volume production of GaAs/AlGaAs heterojunction bipolar transistor wafers. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1475–1478. 5 indexed citations
16.
Leibovitch, M., et al.. (1998). Surface photovoltage spectroscopy of a GaAs/AlGaAs heterojunction bipolar transistor. Applied Physics Letters. 73(5). 650–652. 12 indexed citations
17.
Streit, D.C., A.K. Oki, Thomas Block, et al.. (1996). Commercial heterojunction bipolar transistor production by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(3). 2216–2220. 17 indexed citations
18.
Streit, D.C., Thomas Block, A.C. Han, et al.. (1995). GaAs and InP selective molecular-beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(2). 771–773. 4 indexed citations
19.
Wójtowicz, M., R. Lai, D.C. Streit, et al.. (1994). 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/. IEEE Electron Device Letters. 15(11). 477–479. 70 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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