Hirokuni Tokuda

1.3k total citations
71 papers, 1.1k citations indexed

About

Hirokuni Tokuda is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Hirokuni Tokuda has authored 71 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 58 papers in Condensed Matter Physics, 56 papers in Electrical and Electronic Engineering and 26 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Hirokuni Tokuda's work include GaN-based semiconductor devices and materials (58 papers), Semiconductor materials and devices (34 papers) and Ga2O3 and related materials (26 papers). Hirokuni Tokuda is often cited by papers focused on GaN-based semiconductor devices and materials (58 papers), Semiconductor materials and devices (34 papers) and Ga2O3 and related materials (26 papers). Hirokuni Tokuda collaborates with scholars based in Japan, United States and Philippines. Hirokuni Tokuda's co-authors include Masaaki Kuzuhara, Joel T. Asubar, Yoshiyuki Yamamoto, Takashi Asano, Md. Tanvir Hasan, Katsushi Akita, Shin Hashimoto, S. Hashimoto, J. Yamazaki and Fumio Sasaki and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

Hirokuni Tokuda

67 papers receiving 1.0k citations

Peers

Hirokuni Tokuda

CMP

EEE

EOMM

AMPO

Masakazu Kanechika Japan

Tsutomu Uesugi Japan

Masahiko Kuraguchi Japan

Yoshiharu Takada Japan

Minhan Mi China

Brian Romanczyk United States

Matthew Guidry United States

A.P. Zhang United States

Erin C. H. Kyle United States

Steven Wienecke United States

Masakazu Kanechika Japan

Hirokuni Tokuda

781 ×0.8

CMP

766 ×1.0

EEE

352 ×0.6

EOMM

175 ×0.7

149 ×0.8

AMPO

Citations per year, relative to Hirokuni Tokuda Hirokuni Tokuda (= 1×) peers Masakazu Kanechika

Countries citing papers authored by Hirokuni Tokuda

Since Specialization

Citations

This map shows the geographic impact of Hirokuni Tokuda's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hirokuni Tokuda with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hirokuni Tokuda more than expected).

Fields of papers citing papers by Hirokuni Tokuda

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hirokuni Tokuda. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hirokuni Tokuda. The network helps show where Hirokuni Tokuda may publish in the future.

Co-authorship network of co-authors of Hirokuni Tokuda

This figure shows the co-authorship network connecting the top 25 collaborators of Hirokuni Tokuda. A scholar is included among the top collaborators of Hirokuni Tokuda based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hirokuni Tokuda. Hirokuni Tokuda is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Asubar, Joel T., et al.. (2021). GaN-based MIS-HEMTs with Al₂O₃ dielectric deposited by low-cost and environmental-friendly mist-CVD technique. Applied Physics Express. 14(3). 31004–31004. 13 indexed citations

Tokuda, Hirokuni, et al.. (2019). Influence of reactive-ion-etching depth on interface properties in Al ₂ O ₃ /n-GaN MOS diodes. Japanese Journal of Applied Physics. 58(10). 106503–106503. 7 indexed citations

Yamamoto, Akio, Hirokuni Tokuda, Narihito Okada, et al.. (2019). GaN-on-GaN HEMTs with High Breakdown Critical Fields. The Japan Society of Applied Physics. 1 indexed citations

Yamamoto, Akio, et al.. (2019). Enhancement‐Mode AlGaN/GaN Vertical Trench Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors with a High Drain Current Fabricated Using the AlGaN Regrowth Technique. physica status solidi (a). 217(7). 4 indexed citations

Asubar, Joel T., et al.. (2018). Threshold voltage shift in vertical trench GaN-MOSFETs by negative gate-bias stress. The Japan Society of Applied Physics. 1 indexed citations

Asubar, Joel T., et al.. (2018). Correlation of AlGaN/GaN high-electron-mobility transistors electroluminescence characteristics with current collapse. Applied Physics Express. 11(2). 24101–24101. 7 indexed citations

Asubar, Joel T., et al.. (2018). Study on Threshold Voltage Hysteresis in GaN-Based Vertical Trench MOSFETs. 1–2. 2 indexed citations

Asubar, Joel T., et al.. (2016). Effect of metal electrode edge irregularities on breakdown voltages of AlGaN/GaN HEMTs. 1–2. 1 indexed citations

Asubar, Joel T., et al.. (2015). Cu/Al/Mo/Au and Ni/Al/Mo/Au ohmic contacts for AlGaN/GaN heterostructures. 28. 42–43. 1 indexed citations

10.

Tokuda, Hirokuni, et al.. (2014). Effect of passivation films on DC characteristics of AlGaN/GaN HEMT. 1–2. 6 indexed citations

11.

Kuzuhara, Masaaki & Hirokuni Tokuda. (2014). Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications. IEEE Transactions on Electron Devices. 62(2). 405–413. 102 indexed citations

12.

Hasan, Md. Tanvir, Takashi Asano, Hirokuni Tokuda, & Masaaki Kuzuhara. (2013). Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs. IEEE Electron Device Letters. 34(11). 1379–1381. 98 indexed citations

13.

Asano, Takashi, Naoki Yamada, T. Saito, Hirokuni Tokuda, & Masaaki Kuzuhara. (2012). Breakdown characteristics in AlGaN/GaN HEMTs with multi-field-plate structure. 25. 1–2. 2 indexed citations

14.

Tokuda, Hirokuni, et al.. (2011). Surface barrier height lowering at above 540K in AlInN/AlN/GaN heterostructures. 111(290). 29–33. 3 indexed citations

15.

Hashimoto, Shin, Katsushi Akita, Yoshiyuki Yamamoto, et al.. (2011). High carrier concentration in high Al‐composition AlGaN‐channnel HEMTs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(2). 373–376. 21 indexed citations

16.

Tokuda, Hirokuni, et al.. (2002). K-band GaAs MMIC phase shifter using self-switched filter circuits. 41–43. 1 indexed citations

17.

Mizuno, Hiroshi, et al.. (2002). A Q-band 1 watt 30% power-added-efficiency hetero-junction FET. 296–299. 1 indexed citations

18.

Saito, Y., et al.. (2002). Ku-band 20 W power GaAs FETs. 343–346. 2 indexed citations

19.

Sasaki, Fumio, et al.. (1993). Reliability of Low-Noise HEMTs under Gamma-Ray Irradiation. IEICE Transactions on Electronics. 1379–1383. 3 indexed citations

20.

Kawasaki, H., et al.. (1986). Extremely low-noise HEMT fabricated on MOCVD epi-wafer. 69. 294.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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