M. Antcliffe

1.1k total citations
27 papers, 884 citations indexed

About

M. Antcliffe is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. Antcliffe has authored 27 papers receiving a total of 884 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 19 papers in Condensed Matter Physics and 11 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M. Antcliffe's work include Radio Frequency Integrated Circuit Design (20 papers), GaN-based semiconductor devices and materials (19 papers) and Graphene research and applications (7 papers). M. Antcliffe is often cited by papers focused on Radio Frequency Integrated Circuit Design (20 papers), GaN-based semiconductor devices and materials (19 papers) and Graphene research and applications (7 papers). M. Antcliffe collaborates with scholars based in United States. M. Antcliffe's co-authors include P. Hashimoto, M. Micovic, Ming Hu, I. Milosavljevic, A. Schmitz, D. Wong, J. S. Moon, C. McGuire, Jeong‐Sun Moon and P. J. Willadsen and has published in prestigious journals such as Applied Physics Letters, IEEE Electron Device Letters and Electronics Letters.

In The Last Decade

M. Antcliffe

27 papers receiving 838 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Antcliffe United States	16	707	565	255	241	199	27	884
Yasuo Ohno Japan	17	832 1.2×	706 1.2×	179 0.7×	262 1.1×	240 1.2×	90	1.0k
Ioulia Smorchkova United States	16	610 0.9×	586 1.0×	92 0.4×	206 0.9×	117 0.6×	31	724
L. Kehias United States	10	823 1.2×	948 1.7×	189 0.7×	288 1.2×	337 1.7×	22	1.1k
Jeong-Yeol Han South Korea	11	298 0.4×	471 0.8×	207 0.8×	191 0.8×	228 1.1×	31	580
Yingkui Zheng China	16	528 0.7×	645 1.1×	136 0.5×	165 0.7×	328 1.6×	45	706
Andreas R. Alt Switzerland	16	683 1.0×	680 1.2×	85 0.3×	261 1.1×	262 1.3×	29	834
C. McGuire United States	14	630 0.9×	340 0.6×	376 1.5×	233 1.0×	98 0.5×	22	823
J.C. de Jaeger France	13	424 0.6×	437 0.8×	176 0.7×	143 0.6×	203 1.0×	39	630
D. Regan United States	17	1.1k 1.5×	1.1k 2.0×	161 0.6×	311 1.3×	518 2.6×	27	1.3k

Countries citing papers authored by M. Antcliffe

Since Specialization

Citations

This map shows the geographic impact of M. Antcliffe's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Antcliffe with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Antcliffe more than expected).

Fields of papers citing papers by M. Antcliffe

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Antcliffe. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Antcliffe. The network helps show where M. Antcliffe may publish in the future.

Co-authorship network of co-authors of M. Antcliffe

This figure shows the co-authorship network connecting the top 25 collaborators of M. Antcliffe. A scholar is included among the top collaborators of M. Antcliffe based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Antcliffe. M. Antcliffe is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Moon, Jeong‐Sun, Joel Wong, M. Antcliffe, et al.. (2019). Novel High-speed Linear GaN Technology with High Efficiency. 1130–1132. 20 indexed citations

Moon, Jeong‐Sun, Joel Wong, M. Antcliffe, et al.. (2019). (Invited) High-Speed and Linear Graded-Channel GaN FETs. ECS Meeting Abstracts. MA2019-02(25). 1172–1172. 2 indexed citations

Moon, Jeong‐Sun, et al.. (2018). High‐speed FP GaN HEMT with f _T /f _MAX of 95/200 GHz. Electronics Letters. 54(10). 657–659. 12 indexed citations

Moon, J. S., M. Antcliffe, C. McGuire, et al.. (2013). Graphene FETs for Zero-Bias Linear Resistive FET Mixers. IEEE Electron Device Letters. 34(3). 465–467. 48 indexed citations

Moon, J. S., M. Antcliffe, Adele Schmitz, et al.. (2013). Lateral Graphene Heterostructure Field-Effect Transistor. IEEE Electron Device Letters. 34(9). 1190–1192. 37 indexed citations

Moon, J. S., H. P. Moyer, D. Wong, et al.. (2012). High efficiency X-band class-E GaN MMIC high-power amplifiers. 9–12. 17 indexed citations

Moon, J. S., M. Antcliffe, C. McGuire, et al.. (2012). Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection. IEEE Electron Device Letters. 33(10). 1357–1359. 37 indexed citations

Moon, Jeong‐Sun, M. Antcliffe, Daniel J. Curtis, et al.. (2012). Ultra-low resistance ohmic contacts in graphene field effect transistors. Applied Physics Letters. 100(20). 106 indexed citations

Moon, J. S., M. Antcliffe, A. Schmitz, et al.. (2011). Graphene transistors for RF applications: Opportunities and challenges. 1–2. 1 indexed citations

10.

Moyer, H. P., A. Kurdoghlian, M. Micovic, et al.. (2008). Q-Band GaN MMIC LNA Using a 0.15μm T-Gate Process. 1–4. 13 indexed citations

11.

Micovic, M., A. Kurdoghlian, H. P. Moyer, et al.. (2008). GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio. 1–4. 38 indexed citations

12.

Moon, J. S., D. Wong, Ming Hu, et al.. (2008). 55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge. IEEE Electron Device Letters. 29(8). 834–837. 89 indexed citations

13.

Micovic, M., A. Kurdoghlian, P. Hashimoto, et al.. (2008). GaN MMICs for RF power applications in the 50 GHz to 110 GHz frequency range. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 2044–2046. 7 indexed citations

14.

Hashimoto, P., D. Wong, Ming Hu, et al.. (2007). 10 W/mm and High PAE Field-plated AlGaN/GaN HEMTs at Ka-band with n+GaN Source Contact Ledge. 33–34. 1 indexed citations

15.

Micovic, M., A. Kurdoghlian, P. Hashimoto, et al.. (2006). GaN HFET for W-band Power Applications. 1–3. 75 indexed citations

16.

Moon, Jeong‐Sun, D. Wong, M. Antcliffe, et al.. (2006). High PAE 1mm AlGaN/GaN HEMTs for 20 W and 43% PAE X-band MMIC Amplifiers. 3. 1–2. 8 indexed citations

17.

Wong, D., I. Milosavljevic, Adam Conway, et al.. (2005). Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications. IEEE Electron Device Letters. 26(6). 348–350. 103 indexed citations

18.

Micovic, M., Ming Hu, P. Hashimoto, et al.. (2005). GaN enhancement/depletion-mode FET logic for mixed signal applications. Electronics Letters. 41(19). 1081–1083. 61 indexed citations

19.

Hussain, T., Y. Royter, Miguel Montes Bajo, et al.. (2005). First demonstration of sub-0.25μm-width emitter InP-DHBTs with <400 GHz f/sub t/ and <400 GHz f/sub max/. 553–556. 12 indexed citations

20.

Moon, J. S., D. Wong, T. Hussain, et al.. (2003). Submicron enhancement-mode AlGaN/GaN HEMTs. 23–24. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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