K. Doverspike

3.2k citations

48 papers · 2.7k indexed · 1 hit paper · h-index 22

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 37
- GaN-based semiconductor devices and materials 35
Electrical and Electronic Engineering 29
- Semiconductor materials and devices 13
- Silicon Carbide Semiconductor Technologies 7

Co-authors: D. Kurt Gaskill L.B. Rowland Weijin Qian Marek Skowroński S.T. Sheppard A. E. Wickenden G. Kelner S.C. Binari
Journals: Applied Physics Letters (6 papers)Journal of Applied Physics (4 papers)Electronics Letters (4 papers)Journal of Electronic Materials (3 papers)Diamond and Related Materials (3 papers)
Partner nations: United States China U.S. Virgin Islands

In The Last Decade

K. Doverspike

47 papers receiving 2.6k citations

Hit Papers

align trajectories log scale

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates 1999 · 462 citations

Peers

Countries citing papers authored by K. Doverspike

Since Specialization

Citations

This map shows the geographic impact of K. Doverspike's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Doverspike with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Doverspike more than expected).

Fields of papers citing papers by K. Doverspike

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Doverspike. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Doverspike. The network helps show where K. Doverspike may publish in the future.

Co-authorship network

The 25 scholars most cited alongside K. Doverspike, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K. Doverspike Line = papers co-authored together K. Doverspike links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide Materials science forum ·S.T. Sheppard, K. Doverspike, М.Л. Лимонтова, W.L. Pribble, Scott T. Allen, John W. Palmour	2000	3
2	Pendeoepitaxy of GaN and InGaN LEDs on SiC Materials science forum ·Hoyoul Kong, J. A. Edmond, K. Doverspike, David R. Emerson, G. E. Bulman, K. W. Haberern, Blaisdell, D.B. Slater	2000	4
3	High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates IEEE Electron Device Letters ·S.T. Sheppard, K. Doverspike, W.L. Pribble, Scott T. Allen, John W. Palmour, L. Kehias, T. Jenkins Hit paper breakdown →	1999	462
4	Gain characteristics of InGaN/GaN quantum well diode lasers Applied Physics Letters ·藤浩明, Martin Kuball, A. V. Nurmikko, G. E. Bulman, K. Doverspike, S.T. Sheppard, T. W. Weeks, М.Л. Лимонтова, Hoyoul Kong, Blaisdell, J. A. Edmond	1998	46
5	Nitride-Based Emitters on SiC Substrates Materials science forum ·J. A. Edmond, G. E. Bulman, Hoyoul Kong, М.Л. Лимонтова, K. Doverspike, H. A. Ready, Ming Hui-xian, S.T. Sheppard, Thomas Boll Kristensen, D.B. Slater, S. Rasouli, Hilde Lamo, L. Feijoo Lamagrande, D. Fourie, 藤浩明, Melany Heck, A. V. Nurmikko	1998	3
6	Vacancy structures on the GaN(0001) surface Journal of materials research/Pratt's guide to venture capital sources ·William E. Packard, John D. Dow, K. Doverspike, Ray Kaplan, 조수창	1997	14
7	Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC Electronics Letters ·G. E. Bulman, K. Doverspike, S.T. Sheppard, T. W. Weeks, Hoyoul Kong, Blaisdell, J. A. Edmond, J.D. Brown, Hilde Lamo, J. F. Schetzina	1997	112
8	GaN FETs for microwave and high-temperature applications Solid-State Electronics ·Steven C. Binari, K. Doverspike, G. Kelner, H.B. Dietrich, A. E. Wickenden	1997	133
9	Status of Nitride Based Light Emitting and Laser Diodes on SiC MRS Proceedings ·K. Doverspike, G. E. Bulman, S.T. Sheppard, Hoyoul Kong, М.Л. Лимонтова, Blaisdell, T. W. Weeks, J. A. Edmond, J.D. Brown, J. Lee, J. F. Schetzina, Yoon‐Kyu Song, Martin Kuball, A. V. Nurmikko	1997	13
10	Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films Materials science forum ·F. K. Koschnick, T R Dharshan, E. R. Glaser, K. Doverspike, L.B. Rowland, D. Kurt Gaskill, D. K. Wickenden	1995	5
11	The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire Journal of Electronic Materials ·K. Doverspike, L.B. Rowland, D. Kurt Gaskill, Jaime A. Freitas	1995	52
12	On Compensation and Impurities in State-of-the-Art GaN Epilayers Grown on Sapphire MRS Proceedings ·A. E. Wickenden, D. Kurt Gaskill, Daniel Koleske, K. Doverspike, David S. Simons, P. Chi	1995	21
13	Excitonic Recombination Processes in Undoped and Doped Wurtzite GaN Films Deposited on Sapphire Substrates MRS Proceedings ·Jaime A. Freitas, K. Doverspike, A. E. Wickenden	1995	9
14	Effect of Aluminum Nitride Buffer Layer Temperature on Gallium Nitride Grown by OMVPE MRS Proceedings ·L.B. Rowland, K. Doverspike, D. Kurt Gaskill, Jaime A. Freitas	1994	15
15	Luminescence studies of nitrogen- and boron-doped diamond films Diamond and Related Materials ·Jaime A. Freitas, K. Doverspike, P. B. Klein, Judith Anne Fenner Gentry, A T Collins	1994	20
16	Calorimetric absorption spectroscopy and photoluminescence study of defects in diamond Diamond and Related Materials ·Didier YJY van Berlo, K. Doverspike, U. Strom, Jaime A. Freitas, Raffael Rameshan	1993	8
17	Optical Evidence of Reduction of Radiative Defects in Diamond Films Grown by Acetylene-Oxygen Flames MRS Proceedings ·Jaime A. Freitas, U. Strom, K. Doverspike, Елена Юрьевна Цапук, Keith A. Snail	1992	3
18	Anisotropic thermal expansion of the 1:2:4 yttrium barium copper oxide superconductor Physica C Superconductivity ·K. Doverspike, C. R. Hubbard, R. K. Williams, K.B. Alexander, J. Brynestad, D. M. Kroeger	1991	4
19	Preparation and characterization of members of the system La2−xA1+xCu2O6±y where A = Ca,Sr Journal of Solid State Chemistry ·K. Doverspike, Mrs Engka Sukarsih, K. Dwight, A. Wold	1989	20
20	Preparation and properties of the system Cu2Zn1−xFexGeS4 Materials Research Bulletin ·K. Doverspike, R. Kershaw, K. Dwight, A. Wold	1988	3

About K. Doverspike

K. Doverspike is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials, Atomic and Molecular Physics, and Optics and Geophysics, having authored 48 papers that have together received 2.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (35 papers), Semiconductor materials and devices (13 papers), Metal and Thin Film Mechanics (12 papers), Semiconductor Quantum Structures and Devices (11 papers), Silicon Carbide Semiconductor Technologies (7 papers), ZnO doping and properties (6 papers), Ga2O3 and related materials (6 papers) and High-pressure geophysics and materials (6 papers). The work is most often cited by research in Condensed Matter Physics (2.4k citations), Electronic, Optical and Magnetic Materials (991 citations), Atomic and Molecular Physics, and Optics (846 citations), Electrical and Electronic Engineering (1.4k citations) and Mechanics of Materials (522 citations). K. Doverspike has collaborated with scholars based in United States, China and U.S. Virgin Islands. Frequent co-authors include D. Kurt Gaskill, L.B. Rowland, Weijin Qian, Marek Skowroński, S.T. Sheppard, A. E. Wickenden, G. Kelner, S.C. Binari, Scott T. Allen and W.L. Pribble. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Electronics Letters, Journal of Electronic Materials and Diamond and Related Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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