Masahito Kanamura

1.4k total citations
44 papers, 1.1k citations indexed

About

Masahito Kanamura is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Masahito Kanamura has authored 44 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Condensed Matter Physics, 35 papers in Electrical and Electronic Engineering and 18 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Masahito Kanamura's work include GaN-based semiconductor devices and materials (41 papers), Ga2O3 and related materials (17 papers) and Semiconductor materials and devices (15 papers). Masahito Kanamura is often cited by papers focused on GaN-based semiconductor devices and materials (41 papers), Ga2O3 and related materials (17 papers) and Semiconductor materials and devices (15 papers). Masahito Kanamura collaborates with scholars based in Japan and France. Masahito Kanamura's co-authors include T. Kikkawa, Toshihiro Ohki, Kenji Imanishi, Naoki Hara, K. Joshin, H. Asahi, Tadahiro Imada, Masahiko Hashimoto, Kozo Makiyama and Yikai Zhou and has published in prestigious journals such as Japanese Journal of Applied Physics, Solid State Communications and Journal of Crystal Growth.

In The Last Decade

Masahito Kanamura

44 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Masahito Kanamura Japan 17 1.0k 776 490 364 180 44 1.1k
T. Kikkawa Japan 22 1.3k 1.3× 1.3k 1.6× 498 1.0× 258 0.7× 334 1.9× 80 1.6k
Daniel Piedra United States 20 1.5k 1.5× 1.3k 1.7× 784 1.6× 290 0.8× 288 1.6× 35 1.7k
Hirokuni Tokuda Japan 17 931 0.9× 750 1.0× 553 1.1× 255 0.7× 187 1.0× 71 1.1k
Tsutomu Uesugi Japan 21 1.1k 1.1× 1.1k 1.4× 491 1.0× 223 0.6× 215 1.2× 59 1.3k
A.P. Zhang United States 8 693 0.7× 549 0.7× 272 0.6× 197 0.5× 253 1.4× 12 791
Masahiko Kuraguchi Japan 14 1.3k 1.3× 1.1k 1.4× 610 1.2× 268 0.7× 255 1.4× 30 1.4k
Brian Romanczyk United States 20 1.1k 1.1× 894 1.2× 482 1.0× 282 0.8× 373 2.1× 58 1.3k
Yoshiharu Takada Japan 14 1.3k 1.3× 1.1k 1.5× 599 1.2× 266 0.7× 265 1.5× 32 1.4k
Shawn D. Burnham United States 21 1.0k 1.0× 885 1.1× 402 0.8× 217 0.6× 323 1.8× 38 1.2k
D. Buttari United States 18 1.3k 1.3× 990 1.3× 625 1.3× 360 1.0× 398 2.2× 39 1.5k

Countries citing papers authored by Masahito Kanamura

Since Specialization
Citations

This map shows the geographic impact of Masahito Kanamura's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Masahito Kanamura with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Masahito Kanamura more than expected).

Fields of papers citing papers by Masahito Kanamura

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Masahito Kanamura. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Masahito Kanamura. The network helps show where Masahito Kanamura may publish in the future.

Co-authorship network of co-authors of Masahito Kanamura

This figure shows the co-authorship network connecting the top 25 collaborators of Masahito Kanamura. A scholar is included among the top collaborators of Masahito Kanamura based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Masahito Kanamura. Masahito Kanamura is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gupta, Geetak, Masahito Kanamura, Brian L. Swenson, et al.. (2022). 1200V GaN Switches on Sapphire: A low-cost, high-performance platform for EV and industrial applications. 2022 International Electron Devices Meeting (IEDM). 35.2.1–35.2.4. 11 indexed citations
2.
Bisi, Davide, et al.. (2022). Short-Circuit Capability with GaN HEMTs : Invited. 5 indexed citations
3.
Kikkawa, T., Masahito Kanamura, Toshihiro Ohki, et al.. (2013). Current Status and Future Prospects of GaN HEMTs for High Power and High Frequency Applications. ECS Transactions. 50(3). 323–332. 15 indexed citations
4.
Ozaki, Shiro, Toshihiro Ohki, Masahito Kanamura, Naoya Okamoto, & T. Kikkawa. (2013). Effect of Atomic-Layer-Deposition Method on Threshold Voltage Shift in AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors. Japanese Journal of Applied Physics. 52(11S). 11NG04–11NG04. 20 indexed citations
5.
Kanamura, Masahito, Toshihiro Ohki, T. Kikkawa, Kenji Imanishi, & Naoki Hara. (2010). A Normally-Off GaN HEMT with Large Drain Current. IEEJ Transactions on Electronics Information and Systems. 130(6). 929–933. 1 indexed citations
6.
Yamada, Atsushi, Kozo Makiyama, Toshihiro Ohki, et al.. (2010). Suppression of current collapse for millimeter‐wave GaN‐HEMTs. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(10). 2429–2432. 15 indexed citations
7.
Kikkawa, T., Kozo Makiyama, Toshihiro Ohki, et al.. (2009). High performance and high reliability AlGaN/GaN HEMTs. physica status solidi (a). 206(6). 1135–1144. 90 indexed citations
8.
Makiyama, Kozo, Toshihiro Ohki, Masahito Kanamura, et al.. (2009). High‐power GaN‐HEMT with high three‐terminal breakdown voltage for W‐band applications. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 21 indexed citations
9.
Ohki, Toshihiro, T. Kikkawa, Yusuke Inoue, et al.. (2009). Reliability of GaN HEMTs: current status and future technology. 61–70. 35 indexed citations
10.
Kikkawa, T., Kozo Makiyama, Kenji Imanishi, et al.. (2007). High Fmax GaN-HEMT with High Breakdown Voltage for Millimeter-Wave Applications. 1–4. 5 indexed citations
11.
Makiyama, Kozo, Toshihiro Ohki, Masahito Kanamura, et al.. (2007). High‐fmax GaN HEMT with high breakdown voltage over 100 V for millimeter‐wave applications. physica status solidi (a). 204(6). 2054–2058. 14 indexed citations
12.
Kanamura, Masahito, et al.. (2006). High Power AlGaN/GaN MIS-HEMT. IEICE Technical Report; IEICE Tech. Rep.. 105(521). 51–55. 1 indexed citations
13.
Kanamura, Masahito, T. Kikkawa, Taisuke Iwai, et al.. (2006). An over 100 W n-GaN/n-AlGaN/GaN MIS-HEMT power amplifier for wireless base station applications. 572–575. 25 indexed citations
14.
Kanamura, Masahito. (2005). An Over 100 W n-GaN/n-AlGaN/GaN MIS-HEMT Power Amplifier for W-CDMA Base Station Applications. Medical Entomology and Zoology. 1 indexed citations
15.
Kanamura, Masahito, T. Kikkawa, & K. Joshin. (2005). A 100-W high-gain A1GaNIGaN HEMT power amplifier on a conductive N-SiC substrate for wireless base station applications. 799–802. 12 indexed citations
16.
Kikkawa, T., Miyuki Nagahara, S. Kato, et al.. (2003). High-power and high-efficiency AlGaN/GaN HEMT operated at 50 V drain bias voltage. 48. 167–170. 14 indexed citations
17.
18.
Hashimoto, Masahiko, Yi Zhou, Hitoshi Tampo, Masahito Kanamura, & H. Asahi. (2003). Magnetic and optical properties of GaMnN grown by ammonia-source molecular-beam epitaxy. Journal of Crystal Growth. 252(4). 499–504. 29 indexed citations
19.
Kanamura, Masahito, Yi Zhou, Kumiko Asami, et al.. (2002). Growth of InMnAsSb/InSb Heterostructures with Mid-Infrared-Light-Induced Ferromagnetic Properties. Japanese Journal of Applied Physics. 41(Part 1, No. 2B). 1019–1021. 2 indexed citations
20.
Zhou, Ying, H. Asahi, Masahito Kanamura, et al.. (2001). Growth and characterization of InMnAsSb for the sensor-memory device application at long wavelength region. Journal of Crystal Growth. 227-228. 614–618. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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