Yasuo Ohno

1.3k total citations
90 papers, 1.0k citations indexed

About

Yasuo Ohno is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Yasuo Ohno has authored 90 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 84 papers in Electrical and Electronic Engineering, 39 papers in Condensed Matter Physics and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Yasuo Ohno's work include Semiconductor materials and devices (53 papers), Advancements in Semiconductor Devices and Circuit Design (41 papers) and GaN-based semiconductor devices and materials (39 papers). Yasuo Ohno is often cited by papers focused on Semiconductor materials and devices (53 papers), Advancements in Semiconductor Devices and Circuit Design (41 papers) and GaN-based semiconductor devices and materials (39 papers). Yasuo Ohno collaborates with scholars based in Japan, China and Switzerland. Yasuo Ohno's co-authors include Jin‐Ping Ao, Kazuaki Kunihiro, Masaaki Kuzuhara, Yuji Takahashi, K. Kasahara, Yoshiki Naoi, Daigo Kikuta, Hitoshi Yano, Liuan Li and Naoki Shinohara and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

Yasuo Ohno

85 papers receiving 978 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yasuo Ohno Japan 17 832 706 262 240 179 90 1.0k
L. Kehias United States 10 823 1.0× 948 1.3× 288 1.1× 337 1.4× 189 1.1× 22 1.1k
T. Kikkawa Japan 22 1.3k 1.5× 1.3k 1.8× 334 1.3× 498 2.1× 258 1.4× 80 1.6k
M. Antcliffe United States 16 707 0.8× 565 0.8× 241 0.9× 199 0.8× 255 1.4× 27 884
Yue‐Ming Hsin Taiwan 16 620 0.7× 263 0.4× 162 0.6× 122 0.5× 105 0.6× 116 748
R. Schwindt United States 14 676 0.8× 687 1.0× 254 1.0× 238 1.0× 106 0.6× 30 822
C. Monier United States 18 781 0.9× 427 0.6× 504 1.9× 202 0.8× 191 1.1× 71 986
P. Saunier United States 24 1.6k 1.9× 1.5k 2.1× 529 2.0× 556 2.3× 210 1.2× 92 1.9k
J.A. Roussos United States 18 974 1.2× 1.1k 1.6× 290 1.1× 498 2.1× 320 1.8× 49 1.3k
D. Regan United States 17 1.1k 1.3× 1.1k 1.6× 311 1.2× 518 2.2× 161 0.9× 27 1.3k
Joel Wong United States 16 940 1.1× 1.0k 1.5× 285 1.1× 438 1.8× 150 0.8× 30 1.2k

Countries citing papers authored by Yasuo Ohno

Since Specialization
Citations

This map shows the geographic impact of Yasuo Ohno's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yasuo Ohno with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yasuo Ohno more than expected).

Fields of papers citing papers by Yasuo Ohno

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yasuo Ohno. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yasuo Ohno. The network helps show where Yasuo Ohno may publish in the future.

Co-authorship network of co-authors of Yasuo Ohno

This figure shows the co-authorship network connecting the top 25 collaborators of Yasuo Ohno. A scholar is included among the top collaborators of Yasuo Ohno based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yasuo Ohno. Yasuo Ohno is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ohno, Yasuo, et al.. (2013). Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors. Japanese Journal of Applied Physics. 52(8S). 08JN28–08JN28. 8 indexed citations
2.
Ao, Jin‐Ping, et al.. (2012). Effects of wetting to wireless power transmission by open-ring resonators coupling. 25. 97–100. 3 indexed citations
3.
Ao, Jin‐Ping, et al.. (2012). T-shaped anode GaN Schottky barrier diode for microwave power rectification. 195–198. 4 indexed citations
4.
Ao, Jin‐Ping, et al.. (2012). Analysis of loss mechanism in rectenna circuit with GaN Schottky barrier diode. 179–182. 9 indexed citations
5.
Ao, Jin‐Ping, et al.. (2010). Misalignment effects in inter-chip wireless connection with open-ring resonators. Asia-Pacific Microwave Conference. 908–911.
7.
Okada, Masaya, Hideki Ito, Jin‐Ping Ao, & Yasuo Ohno. (2008). Mechanism of AlGaN/GaN Heterostructure Field-Effect Transistor Threshold Voltage Shift by Illumination. Japanese Journal of Applied Physics. 47(4R). 2103–2103. 4 indexed citations
8.
Ao, Jin‐Ping, Yoshikazu Yonei, Yuya Yamaoka, & Yasuo Ohno. (2007). A monolithic Cockcroft‐Walton voltage multiplier based on AlGaN/GaN HFET structure. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(7). 2654–2657. 1 indexed citations
9.
Okada, Morihito, Motohiro Kamei, Daigo Kikuta, et al.. (2004). Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor. Applied Physics Letters. 84(20). 3996–3998. 6 indexed citations
10.
Kunihiro, Kazuaki, et al.. (2002). Effects of buried p-layers on substrate-trap induced phenomena in GaAs MESFETs. 32. 179–182. 1 indexed citations
12.
Kasahara, K., et al.. (1999). Microwave Power AlGaN/GaN HJFETs. 99(66). 37–42. 1 indexed citations
13.
Takahashi, Yuji, Kazuaki Kunihiro, & Yasuo Ohno. (1999). Two-Dimensional Cyclic Bias Device Simulator and Its Application to GaAs HJFET Pulse Pattern Effect Analysis. IEICE Transactions on Electronics. 82(6). 917–923. 1 indexed citations
14.
Ohno, Yasuo, et al.. (1999). Surface-states effects on GaAs FET electrical performance. IEEE Transactions on Electron Devices. 46(1). 214–219. 18 indexed citations
15.
Francis, P., et al.. (1996). Numerical simulations of surface states effects on GaAs power MESFETs. 117–118. 1 indexed citations
16.
Fujii, Masahiro, Masatoshi Tokushima, M. Fukaishi, et al.. (1992). Low power consumption 16:1 MUX/DMUX for the STM-16 transmission systems based on DMT DCFL circuits. 33(3). 313–323.
17.
Okuto, Y., M. Fukuma, & Yasuo Ohno. (1982). SOS/CMOS as a high-performance LSI device. IEEE Transactions on Electron Devices. 29(4). 574–577. 5 indexed citations
18.
Ohno, Yasuo & Y. Okuto. (1982). Electron mobility in n-channel depletion-type MOS transistors. IEEE Transactions on Electron Devices. 29(2). 190–194. 13 indexed citations
19.
Ohno, Yasuo. (1982). Short-channel MOSFET VT-VDScharacteristics model based on a point charge and its mirror images. IEEE Transactions on Electron Devices. 29(2). 211–216. 5 indexed citations
20.
Fukuma, M., Yasuo Ohno, & Y. Okuto. (1982). SOS MOSFET two-dimensional analysis. IEEE Transactions on Electron Devices. 29(3). 410–413. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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