K.S. Krisch

989 citations

23 papers · 694 indexed · h-index 12

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Radiation Effects in Electronics
- Ferroelectric and Negative Capacitance Devices
Materials Chemistry
- Silicon Nanostructures and Photoluminescence
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 23
- Semiconductor materials and devices 20
- Advancements in Semiconductor Devices and Circuit Design 15
- Integrated Circuits and Semiconductor Failure Analysis 6
- Ferroelectric and Negative Capacitance Devices 3
- Low-power high-performance VLSI design 3
- Thin-Film Transistor Technologies 3
- Electrostatic Discharge in Electronics 2
Ceramics and Composites 1

Co-authors: L. Manchanda D. Brasen B. E. Weir L. C. Feldman C.G. Sodini P. J. Silvėrman D. Monroe G. B. Alers
Journals: Applied Physics Letters (5 papers)Journal of Applied Physics (3 papers)IEEE Electron Device Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)IEEE Transactions on Nuclear Science (1 paper)
Partner nations: United States Netherlands Italy

In The Last Decade

K.S. Krisch

22 papers receiving 657 citations

Peers

Countries citing papers authored by K.S. Krisch

Since Specialization

Citations

This map shows the geographic impact of K.S. Krisch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.S. Krisch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.S. Krisch more than expected).

Fields of papers citing papers by K.S. Krisch

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.S. Krisch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.S. Krisch. The network helps show where K.S. Krisch may publish in the future.

Co-authorship network

The 25 scholars most cited alongside K.S. Krisch, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K.S. Krisch Line = papers co-authored together K.S. Krisch links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Substrate injection and crosstalk in CMOS circuits J. Briaire, K.S. Krisch	2003	5
2	The impact of nitrogen profile engineering on ultrathin nitrided oxide films for dual-gate CMOS ULSI Eiji HASEGAWA, Lorenza De Filippis, K. Ando, Neil M. Brown, Yu-Xin Bai, Akihiko Ishitani, L. Manchanda, M. Schmid, K.S. Krisch, L. C. Feldman	2002	8
3	Physics-based RF noise modeling of submicron MOSFETs Simona Donati Guerrieri, M. A. Alam, K.S. Krisch, S. Sato, M.R. Pinto, H.-H. Vuong, Fabrizio Bonani, Giovanni Ghione	2002	7
4	Ultra-thin gate dielectrics: they break down, but do they fail? B. E. Weir, P. J. Silvėrman, D. Monroe, K.S. Krisch, Muhammad A. Alam, G. B. Alers, T. Sorsch, G. Timp, F.H. Baumann, V. Brisson, Yubin Ma, D. Hwang	2002	120
5	Impact of boron diffusion through O/sub 2/ and N/sub 2/O gate dielectrics on the process margin of dual-poly low power CMOS K.S. Krisch, L. Manchanda, F.H. Baumann, José E. López-Piña, D. Brasen, L. C. Feldman, A. Ourmazd	2002	6
6	Soft Breakdown in Ultra-Thin Oxides MRS Proceedings ·B. E. Weir, P. J. Silvėrman, G. B. Alers, D. Monroe, Muhammad A. Alam, T. Sorsch, Muhammet Ekincioğlu, G. Timp, Y. Ma, M. Frei, Ashish Singh, J. Bude, K.S. Krisch	1999	5
7	Precursor ion damage and angular dependence of single event gate rupture in thin oxides IEEE Transactions on Nuclear Science ·F.W. Sexton, Daniel M. Fleetwood, M.R. Shaneyfelt, P.E. Dodd, G.L. Hash, V I Dmitriev, Saint-Gobain UK & Ireland, K.S. Krisch, M. Classen, B. E. Weir, P. J. Silvėrman	1998	112
8	Evidence of annealing effects on a high-density Si/SiO2 interfacial layer Applied Physics Letters ·S. D. Kosowsky, P. S. Pershan, K.S. Krisch, J. Bevk, Xavier Lange, D. Brasen, L. C. Feldman, P.K. Roy	1997	64
9	Effect of electronic corrections on the thickness dependence of thin oxide reliability Applied Physics Letters ·G. B. Alers, A. S. Oates, D. Monroe, K.S. Krisch, B. E. Weir	1997	4
10	1/f Noise in the Tunneling Current of thin Gate Oxides MRS Proceedings ·G. B. Alers, D. Monroe, K.S. Krisch, B. E. Weir, A. M. Chang	1996	7
11	Gate capacitance attenuation in MOS devices with thin gate dielectrics IEEE Electron Device Letters ·K.S. Krisch, J. Bude, L. Manchanda	1996	54
12	Tunneling current noise in thin gate oxides Applied Physics Letters ·G. B. Alers, K.S. Krisch, D. Monroe, B. E. Weir, A. M. Chang	1996	39
13	Kinetic smoothening: Growth thickness dependence of the interface width of the Si(001)/SiO2 interface Journal of Applied Physics ·J.L. Dawson, K.S. Krisch, K. Evans‐Lutterodt, Mau‐Tsu Tang, L. Manchanda, Cleiton Sousa, D. Brasen, G. S. Higashi, T. Boone	1995	8
14	Growth temperature dependence of the Si(001)/SiO2 interface width Applied Physics Letters ·Mau‐Tsu Tang, K. Evans‐Lutterodt, Cleiton Sousa, D. Brasen, K.S. Krisch, L. Manchanda, G. S. Higashi, T. Boone	1994	21
15	Suppression of interface-state generation in reoxidized nitrided oxide gate dielectrics Journal of Applied Physics ·K.S. Krisch, C.G. Sodini	1994	13
16	Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness Applied Physics Letters ·M. L. Green, D. Brasen, K. Evans‐Lutterodt, L. C. Feldman, K.S. Krisch, W. N. Lennard, Haozheng Tang, L. Manchanda, M.-T. Tang	1994	102
17	In-Situ Processing of Si Film Structures in a Rapid Thermal Chemical Vapor Deposition Reactor MRS Proceedings ·M. L. Green, D. Brasen, H. S. Luftman, T. Boone, K.S. Krisch	1993	1
18	Low-temperature furnace-grown reoxidized nitrided oxide gate dielectrics as a barrier to boron penetration IEEE Electron Device Letters ·N. Morris, K.S. Krisch, B. Groß, C.G. Sodini, J.E. Chung, D.A. Antoniadis	1992	35
19	An optimized 850 degrees C low-pressure-furnace reoxidized nitrided oxide (ROXNOX) process IEEE Transactions on Electron Devices ·B. Groß, K.S. Krisch, C.G. Sodini	1991	14
20	Positive-charge trapping in nitrided oxide and reoxidized nitrided oxide gate dielectrics Journal of Applied Physics ·K.S. Krisch, B. Groß, C.G. Sodini	1991	19

About K.S. Krisch

K.S. Krisch is a scholar working on Electrical and Electronic Engineering, Ceramics and Composites, Condensed Matter Physics, Computational Mechanics and Surfaces, Coatings and Films, having authored 23 papers that have together received 694 indexed citations. Recurring topics across this work include Semiconductor materials and devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers), Ion-surface interactions and analysis (3 papers), Ferroelectric and Negative Capacitance Devices (3 papers), Low-power high-performance VLSI design (3 papers), Thin-Film Transistor Technologies (3 papers) and Electrostatic Discharge in Electronics (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (675 citations), Materials Chemistry (171 citations), Hardware and Architecture (20 citations), Condensed Matter Physics (30 citations) and Surfaces, Coatings and Films (18 citations). K.S. Krisch has collaborated with scholars based in United States, Netherlands and Italy. Frequent co-authors include L. Manchanda, D. Brasen, B. E. Weir, L. C. Feldman, C.G. Sodini, P. J. Silvėrman, D. Monroe, G. B. Alers, F.H. Baumann and J. Bude. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Electron Device Letters, IEEE Transactions on Electron Devices and IEEE Transactions on Nuclear Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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