K. Ando

608 total citations
27 papers, 459 citations indexed

About

K. Ando is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, K. Ando has authored 27 papers receiving a total of 459 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in K. Ando's work include Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). K. Ando is often cited by papers focused on Semiconductor materials and devices (22 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). K. Ando collaborates with scholars based in Japan and United States. K. Ando's co-authors include Eiji HASEGAWA, Haruhiko Ono, Tomohisa Kitano, Taeko Ikarashi, Shinji Fujieda, Tsuyoshi Hirata, N. Ikezawa, Akihiko Ishitani, Masaru Tsukiji and T. Horiuchi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

K. Ando

25 papers receiving 434 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Ando Japan 10 397 137 69 44 30 27 459
K. F. Dombrowski Germany 10 213 0.5× 86 0.6× 58 0.8× 69 1.6× 11 0.4× 23 310
T. Horiuchi Japan 12 764 1.9× 52 0.4× 66 1.0× 79 1.8× 9 0.3× 51 820
Takuya Hoshi Japan 11 325 0.8× 62 0.5× 87 1.3× 176 4.0× 4 0.1× 57 418
Y. Tsuchiya Japan 10 296 0.7× 155 1.1× 81 1.2× 90 2.0× 2 0.1× 31 376
M. Morimoto Japan 13 413 1.0× 41 0.3× 60 0.9× 188 4.3× 4 0.1× 53 450
Raghunandan Swain India 13 244 0.6× 72 0.5× 84 1.2× 58 1.3× 4 0.1× 46 366
Y. Toyoshima Japan 16 834 2.1× 52 0.4× 138 2.0× 137 3.1× 7 0.2× 97 864
L. Ciampolini France 9 321 0.8× 55 0.4× 56 0.8× 115 2.6× 2 0.1× 35 361
Xiangliang Jin China 10 311 0.8× 61 0.4× 47 0.7× 28 0.6× 3 0.1× 98 362
L.C. Parrillo United States 10 372 0.9× 38 0.3× 18 0.3× 70 1.6× 6 0.2× 25 385

Countries citing papers authored by K. Ando

Since Specialization
Citations

This map shows the geographic impact of K. Ando's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Ando with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Ando more than expected).

Fields of papers citing papers by K. Ando

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Ando. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Ando. The network helps show where K. Ando may publish in the future.

Co-authorship network of co-authors of K. Ando

This figure shows the co-authorship network connecting the top 25 collaborators of K. Ando. A scholar is included among the top collaborators of K. Ando based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Ando. K. Ando is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Terai, Masayuki, et al.. (2008). Trapped-Hole-Enhanced Erase-Level Shift by FN-Stress Disturb in Sub-90-nm-Node Embedded SONOS Memory. IEEE Transactions on Electron Devices. 55(6). 1464–1471. 1 indexed citations
3.
5.
Fujieda, Shinji, et al.. (2003). Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems. Applied Physics Letters. 82(21). 3677–3679. 50 indexed citations
6.
Aoki, Yasuhiro, Tetsuzo Ueda, Hajime Shirai, et al.. (2003). Ultra-high-performance 0.13-μm embedded DRAM technology using TiN/HfO/sub 2//TiN/W capacitor and body-slightly-tied SOI. 831–834. 1 indexed citations
7.
HASEGAWA, Eiji, K. Ando, Akihiko Ishitani, et al.. (2002). The impact of nitrogen profile engineering on ultrathin nitrided oxide films for dual-gate CMOS ULSI. 327–330. 8 indexed citations
8.
Ito, Seiichi, Keiko Yamaguchi, Tsuyoshi Hirata, et al.. (2002). Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design. 247–250. 103 indexed citations
9.
Masuoka, S., K. Noda, S. Ito, et al.. (2002). A 0.99-μm/sup 2/ loadless four-transistor SRAM cell in 0.13-μm generation CMOS technology. 164–165. 3 indexed citations
10.
Wilde, Markus, et al.. (2002). Influence of H2-annealing on the hydrogen distribution near SiO2/Si(100) interfaces revealed by in situ nuclear reaction analysis. Journal of Applied Physics. 92(8). 4320–4329. 32 indexed citations
11.
Ono, Haruhiko, et al.. (2000). Reoxidation effects on the chemical bonding states of nitrogen accumulated at the oxynitride/silicon interface. Applied Physics Letters. 77(2). 220–222. 16 indexed citations
12.
Ando, K.. (1998). A 0.9-nsaccess, 700-MHz SRAM macro using a configurable organization technique with an automatic timing adjuster. Medical Entomology and Zoology. 182–183. 2 indexed citations
13.
Ono, Haruhiko, Taeko Ikarashi, K. Ando, & Tomohisa Kitano. (1998). Infrared studies of transition layers at SiO2/Si interface. Journal of Applied Physics. 84(11). 6064–6069. 47 indexed citations
15.
Sakai, Tetsuya, et al.. (1995). 0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTA. Thin Solid Films. 270(1-2). 537–543. 2 indexed citations
16.
Ishitani, Akihiko, Pierre‐Yves Lesaicherre, Satoshi Kamiyama, K. Ando, & Hirohito Watanabe. (1993). Trends in Capacitor Dielectrics for DRAMs (Special Issue on LSI Memories). IEICE Transactions on Electronics. 76(11). 1564–1581. 4 indexed citations
17.
Ando, K., et al.. (1993). Effect of ultraviolet irradiation upon the recombination lifetime of silicon wafers covered with a dielectric film. Applied Physics Letters. 63(9). 1246–1248. 4 indexed citations
18.
Ando, K., et al.. (1991). 250-MHz BiCMOS super-high-speed video signal processor (S-VSP) ULSI. IEEE Journal of Solid-State Circuits. 26(12). 1876–1884. 24 indexed citations
19.
Ando, K., Toshiaki Inoue, Masaki Ishida, et al.. (1991). A 250MHz 16b 1-million Transistor BICMOS Super-high-speed Video Signal Processor. 254–255. 20 indexed citations
20.
Yamashina, M., K. Ando, H. Yamada, et al.. (1989). A 200-MHz 16-bit super high-speed signal processor (SSSP) LSI. IEEE Journal of Solid-State Circuits. 24(6). 1668–1674. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026