W. N. Lennard

1.7k total citations
52 papers, 1.4k citations indexed

About

W. N. Lennard is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Radiation. According to data from OpenAlex, W. N. Lennard has authored 52 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Materials Chemistry, 21 papers in Electrical and Electronic Engineering and 17 papers in Radiation. Recurrent topics in W. N. Lennard's work include Electron and X-Ray Spectroscopy Techniques (15 papers), Semiconductor materials and devices (15 papers) and X-ray Spectroscopy and Fluorescence Analysis (14 papers). W. N. Lennard is often cited by papers focused on Electron and X-Ray Spectroscopy Techniques (15 papers), Semiconductor materials and devices (15 papers) and X-ray Spectroscopy and Fluorescence Analysis (14 papers). W. N. Lennard collaborates with scholars based in Canada, United States and Germany. W. N. Lennard's co-authors include K. Griffiths, J. A. Bardwell, G.R. Massoumi, M. Kasrai, G.M. Bancroft, I. V. Mitchell, K. H. Tan, Hong Tang, Simon R. Bare and D. F. Mitchell and has published in prestigious journals such as Physical Review Letters, SHILAP Revista de lepidopterología and Physical review. B, Condensed matter.

In The Last Decade

W. N. Lennard

51 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. N. Lennard Canada 20 708 580 253 228 206 52 1.4k
Motoyasu Imamura Japan 22 908 1.3× 394 0.7× 120 0.5× 374 1.6× 245 1.2× 77 1.5k
S. Scaglione Italy 18 812 1.1× 605 1.0× 186 0.7× 163 0.7× 309 1.5× 75 1.4k
Yuden Teraoka Japan 23 1.3k 1.8× 922 1.6× 378 1.5× 126 0.6× 168 0.8× 144 2.0k
E. Zoethout Netherlands 21 549 0.8× 614 1.1× 352 1.4× 94 0.4× 172 0.8× 83 1.4k
D.J. Fabian United Kingdom 19 900 1.3× 420 0.7× 386 1.5× 181 0.8× 231 1.1× 60 1.6k
R.L. Tapping Canada 20 867 1.2× 318 0.5× 428 1.7× 159 0.7× 68 0.3× 57 1.4k
P. Ascarelli Italy 23 1000 1.4× 341 0.6× 253 1.0× 275 1.2× 284 1.4× 63 1.4k
A. E. Morgan United States 20 613 0.9× 850 1.5× 624 2.5× 145 0.6× 257 1.2× 63 1.7k
L. J. Huang Canada 18 538 0.8× 375 0.6× 171 0.7× 199 0.9× 183 0.9× 71 982
O. Brümmer Germany 19 888 1.3× 360 0.6× 364 1.4× 300 1.3× 530 2.6× 125 1.6k

Countries citing papers authored by W. N. Lennard

Since Specialization
Citations

This map shows the geographic impact of W. N. Lennard's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. N. Lennard with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. N. Lennard more than expected).

Fields of papers citing papers by W. N. Lennard

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. N. Lennard. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. N. Lennard. The network helps show where W. N. Lennard may publish in the future.

Co-authorship network of co-authors of W. N. Lennard

This figure shows the co-authorship network connecting the top 25 collaborators of W. N. Lennard. A scholar is included among the top collaborators of W. N. Lennard based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. N. Lennard. W. N. Lennard is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Setoodehnia, K., A. A. Chen, Jun Chen, et al.. (2020). Level structure of S31 via S32(p,d)S31. Physical review. C. 102(4). 5 indexed citations
2.
Setoodehnia, K., A. A. Chen, Jun Chen, et al.. (2010). Study of astrophysically important resonant states in 30 S using the 32S(p,t)30 S reaction. SHILAP Revista de lepidopterología. 1 indexed citations
3.
4.
Elliman, R. G., R. Grötzschel, S. C. Gujrathi, et al.. (2004). Round Robin: measurement of H implantation distributions in Si by elastic recoil detection. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 222(3-4). 547–566. 23 indexed citations
5.
Gupta, J. A., D. Landheer, G. I. Sproule, et al.. (2001). Interfacial layer formation in Gd2O3 films deposited directly on Si(0 0 1). Applied Surface Science. 173(3-4). 318–326. 53 indexed citations
6.
Walker, Scott R., John Davies, Peter Mascher, et al.. (2000). Characterization of silicon oxynitride films using ion beam analysis techniques. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 170(3-4). 461–466. 11 indexed citations
7.
Fuller, Marina L. Suominen, et al.. (2000). The use of X‐ray absorption spectroscopy for monitoring the thickness of antiwear films from ZDDP. Tribology Letters. 8(4). 187–192. 91 indexed citations
8.
Xia, Hengchuan, L. Rodrı́guez-Fernández, W. N. Lennard, et al.. (1999). Range distribution of 31P ions implanted into Ge. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 149(1-2). 1–6. 3 indexed citations
9.
Rodrı́guez-Fernández, L., W. N. Lennard, Hengchuan Xia, & G.R. Massoumi. (1996). SPIX: a new technique for quantitative surface spectroscopy applied to. Applied Surface Science. 103(3). 289–298. 7 indexed citations
10.
Xia, Hengchuan, W. N. Lennard, L. J. Huang, et al.. (1996). Sulphur diffusion at the Si/GaAs(110) interface. Journal of Applied Physics. 80(8). 4354–4357. 1 indexed citations
11.
Huang, L. J., W. M. Lau, Hong Tang, et al.. (1996). Structure of the SiNx/GaAs (110) interface modified with ultrathin Si and sulfur passivation. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(4). 2895–2900. 2 indexed citations
12.
Green, M. L., D. Brasen, L. C. Feldman, W. N. Lennard, & Haozheng Tang. (1995). Effect of incorporated nitrogen on the kinetics of thin rapid thermal N2O oxides. Applied Physics Letters. 67(11). 1600–1602. 21 indexed citations
13.
Tong, S. Y. & W. N. Lennard. (1995). Ionization energy for charged particles in Ge. Physical review. B, Condensed matter. 51(2). 713–725. 1 indexed citations
14.
Mitchell, D. F., K. B. Clark, J. A. Bardwell, et al.. (1994). Film thickness measurements of SiO 2 by XPS. Surface and Interface Analysis. 21(1). 44–50. 145 indexed citations
15.
Tang, Hong, W. N. Lennard, M. Zinke-Allmang, et al.. (1994). Nitrogen content of oxynitride films on Si(100). Applied Physics Letters. 64(25). 3473–3475. 28 indexed citations
16.
Lennard, W. N., G.R. Massoumi, I. V. Mitchell, et al.. (1994). Measurements of thin oxide films of SiO2/Si(100). Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 85(1-4). 42–46. 8 indexed citations
17.
Lennard, W. N., et al.. (1993). Channeling measurements methodology. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 74(4). 581–596. 10 indexed citations
18.
McIntyre, N. S., Christopher G. Weisener, R. D. Davidson, et al.. (1990). Analysis of zirconium–niobium pressure tube surfaces for hydrogen using secondary ion mass spectrometry (SIMS). Surface and Interface Analysis. 15(10). 591–597. 12 indexed citations
19.
Lennard, W. N., M. L. Swanson, Д. Егер, A. J. SpringThorpe, & F. R. Shepherd. (1988). The lattice position of diffused Zn in InP. Journal of Electronic Materials. 17(1). 1–3. 6 indexed citations
20.
He, Jimin, U. Memmert, K. Griffiths, W. N. Lennard, & P.R. Norton. (1988). Absolute coverages for the various surface phases of CO and O adsorbed on Pd(110). Surface Science. 202(3). L555–L558. 41 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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