P. J. Silvėrman

6.6k total citations · 1 hit paper
117 papers, 4.8k citations indexed

About

P. J. Silvėrman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, P. J. Silvėrman has authored 117 papers receiving a total of 4.8k indexed citations (citations by other indexed papers that have themselves been cited), including 66 papers in Electrical and Electronic Engineering, 58 papers in Atomic and Molecular Physics, and Optics and 24 papers in Materials Chemistry. Recurrent topics in P. J. Silvėrman's work include Semiconductor materials and devices (49 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers) and Surface and Thin Film Phenomena (24 papers). P. J. Silvėrman is often cited by papers focused on Semiconductor materials and devices (49 papers), Advancements in Semiconductor Devices and Circuit Design (27 papers) and Surface and Thin Film Phenomena (24 papers). P. J. Silvėrman collaborates with scholars based in United States, Germany and United Kingdom. P. J. Silvėrman's co-authors include Y. Kuk, L. C. Feldman, B. E. Weir, Eugene A. Fitzgerald, I. Stensgaard, Ya‐Hong Xie, D. Monroe, Md Ashraful Alam, Robert Culbertson and L. C. Feldman and has published in prestigious journals such as Nature, Physical Review Letters and Physical review. B, Condensed matter.

In The Last Decade

P. J. Silvėrman

115 papers receiving 4.6k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

1992 441 citations Eugene A. Fitzgerald, Ya‐Hong Xie et al. profile →

Peers

Countries citing papers authored by P. J. Silvėrman

Since Specialization

Citations

This map shows the geographic impact of P. J. Silvėrman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. J. Silvėrman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. J. Silvėrman more than expected).

Fields of papers citing papers by P. J. Silvėrman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. J. Silvėrman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. J. Silvėrman. The network helps show where P. J. Silvėrman may publish in the future.

Co-authorship network of co-authors of P. J. Silvėrman

This figure shows the co-authorship network connecting the top 25 collaborators of P. J. Silvėrman. A scholar is included among the top collaborators of P. J. Silvėrman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. J. Silvėrman. P. J. Silvėrman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	FEL Applications in EUV Lithography 2005 ·Presented at ·(unknown), R. H. Pantell, David M. Williams, (unknown), P. J. Silvėrman, (unknown), (unknown), M. Goldstein	3
2	Gate dielectric breakdown in the time-scale of ESD events 2005 ·Microelectronics Reliability ·B. E. Weir, (unknown), P. J. Silvėrman, Muhammad A. Alam	12
3	Statistically independent soft breakdowns redefine oxide reliability specifications 2003 ·Md Ashraful Alam, (unknown), B. E. Weir, P. J. Silvėrman	45
4	Uncorrelated breakdown of integrated circuits 2002 ·Nature ·Md Ashraful Alam, (unknown), B. E. Weir, P. J. Silvėrman	55
5	Soft breakdown at all positions along the N-MOSFET 2001 ·Microelectronic Engineering ·B. E. Weir, Md Ashraful Alam, P. J. Silvėrman	11
6	Modeling and Simulation of Tunneling Current in MOS Devices Including Quantum Mechanical Effects 2000 ·IEICE Transactions on Electronics ·A. Ghetti, (unknown), P. J. Silvėrman, (unknown), (unknown)	13
7	Gate oxide reliability projection to the sub-2 nm regime 2000 ·Semiconductor Science and Technology ·B. E. Weir, Md Ashraful Alam, J. Bude, P. J. Silvėrman, A. Ghetti, F.H. Baumann, (unknown), D. Monroe, T. Sorsch, G. Timp, Y. Ma, (unknown), Abdullah Hamad, D. Hwang, Philip E. Mason	66
8	Understanding the limits of ultrathin SiO2 and SiON gate dielectrics for sub-50 nm CMOS 1999 ·Microelectronic Engineering ·(unknown), T. Sorsch, G. Timp, David A. Muller, B. E. Weir, P. J. Silvėrman, S. Moccio, (unknown)	55
9	Effect of tensile strain on B-type step energy on Si(001)-(2×1) surfaces determined by switch-kink counting 1999 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Eric R. Heller, (unknown), J. P. Pelz, Y. H. Xie, P. J. Silvėrman	3
10	Antidot superlattices in two-dimensional hole gases confined in strained germanium layers 1995 ·Semiconductor Science and Technology ·D. Többen, Markus Holzmann, G. Abstreiter, Armin Kriele, H. Lorenz, J. P. Kotthaus, F. Schäffler, Y. H. Xie, P. J. Silvėrman, D. Monroe	5
11	Near-field scanning optical microscopy imaging of individual threading dislocations on relaxed GexSi1−x films 1994 ·Applied Physics Letters ·Julia W. P. Hsu, Eugene A. Fitzgerald, Ya‐Hong Xie, P. J. Silvėrman	35
12	Very high mobility two-dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy 1993 ·Applied Physics Letters ·Ya‐Hong Xie, Don Monroe, Eugene A. Fitzgerald, P. J. Silvėrman, (unknown), G. P. Watson	160
13	Use of a scanning tunneling microscope to rectify optical frequencies and measure an operational tunneling time 1988 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·A. A. Lucas, P. H. Cutler, T. E. Feuchtwang, Tien T. Tsong, T. E. Sullivan, (unknown), Nguyễn Quang Hưng, P. J. Silvėrman	34
14	The effect of channeling on MeV ion-induced auger electron production in silicon 1985 ·Surface Science ·Jack R. MacDonald, L. C. Feldman, P. J. Silvėrman, John Davies, T. E. Jackman	5
15	Hydrogen adsorption on Si(111)–(7×7) 1982 ·Journal of Vacuum Science and Technology ·Robert Culbertson, L. C. Feldman, P. J. Silvėrman, R. C. Haight	88
16	Silicide Formation at Fe-Si Interfaces Studied by Mössbauer Spectroscopy and Rutherford Backscattering 1980 ·MRS Proceedings ·Richard L. Cohen, L. C. Feldman, K. W. West, P. J. Silvėrman	1
17	Reconstruction of the W (001) Surface and Its Reordering by Hydrogen Adsorption, Studied by MeV Ion Scattering 1979 ·Physical Review Letters ·I. Stensgaard, L. C. Feldman, P. J. Silvėrman	157
18	Structural studies of the reconstructed W(001) surface with MeV ion scattering 1979 ·Surface Science ·L. C. Feldman, P. J. Silvėrman, I. Stensgaard	34
19	Use of Thin Si Crystals in Backscattering-Channeling Studies of the Si-SiO2Interface 1978 ·Physical Review Letters ·L. C. Feldman, P. J. Silvėrman, J. S. Williams, T. E. Jackman, I. Stensgaard	85
20	Effect of annealing on the resistivity of quench-condensed Cu and Cu(Fe) thin films 1978 ·Journal of Low Temperature Physics ·P. J. Silvėrman, C. V. Briscoe	2

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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