G. S. Higashi

7.4k citations

73 papers · 6.1k indexed · 4 hit papers · h-index 32

Electrical and Electronic Engineering top 0.5%
Materials Chemistry top 1%
Atomic and Molecular Physics, and Optics top 1%
Biomedical Engineering top 2%
Computational Mechanics top 1%

Co-authors: Yves J. Chabal Krishnan Raghavachari Gary W. Trucks R. S. Becker V. A. Burrows P. Dumas Cass Fleming S. B. Christman
Topics: Semiconductor materials and devices (30 papers)Silicon Nanostructures and Photoluminescence (14 papers)Force Microscopy Techniques and Applications (8 papers)
Cited by: Atomic and Molecular Physics, and Optics Surfaces, Coatings and Films Structural Biology
Journals: Physical Review Letters The Journal of Chemical Physics Physical review. B, Condensed matter
Partner nations: United States Germany France

In The Last Decade

G. S. Higashi

71 papers receiving 5.8k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Ideal hydrogen termination of the Si (111) surface

1990 1.2k citations G. S. Higashi, Yves J. Chabal et al. Applied Physics Letters profile →
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

1989 575 citations Yves J. Chabal, G. S. Higashi et al. profile →
Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF

1991 422 citations G. S. Higashi, R. S. Becker et al. Applied Physics Letters profile →
Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology

1988 387 citations Yves J. Chabal, G. S. Higashi et al. Applied Physics Letters profile →

Peers

Countries citing papers authored by G. S. Higashi

Since Specialization

Citations

This map shows the geographic impact of G. S. Higashi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. S. Higashi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. S. Higashi more than expected).

Fields of papers citing papers by G. S. Higashi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. S. Higashi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. S. Higashi. The network helps show where G. S. Higashi may publish in the future.

Co-authorship network of co-authors of G. S. Higashi

This figure shows the co-authorship network connecting the top 25 collaborators of G. S. Higashi. A scholar is included among the top collaborators of G. S. Higashi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. S. Higashi. G. S. Higashi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	27.6% Conversion efficiency, a new record for single-junction solar cells under 1 sun illumination 2011 ·Brendan M. Kayes,Hui Nie,(unknown),S.G. Spruytte,F. Reinhardt,I.C. Kizilyalli,G. S. Higashi	352
2	Multi-level metal CMOS manufacturing with deuterium for improved hot carrier reliability 2002 ·I.C. Kizilyalli,Gary R. Weber,Zhaozhong Chen,G. C. Abeln,(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),Manish I. Patel,(unknown),(unknown),(unknown),P.K. Roy,G. S. Higashi,(unknown),(unknown),Joseph W. Lyding,K. Hess	3
3	Chemomechanical polishing of silicon: Surface termination and mechanism of removal 1994 ·Applied Physics Letters ·G. J. Pietsch,G. S. Higashi,Yves J. Chabal	75
4	Growth temperature dependence of the Si(001)/SiO2 interface width 1994 ·Applied Physics Letters ·Mau‐Tsu Tang,K. Evans‐Lutterodt,(unknown),D. Brasen,K.S. Krisch,L. Manchanda,G. S. Higashi,T. Boone	21
5	Surface chemical cleaning and passivation for semiconductor processing 1993 ·G. S. Higashi,E. A. Irene,(unknown)	27
6	First-Principles Study of the Etching Reactions of HF and H2O with Si/SiO2 Surfaces 1993 ·MRS Proceedings ·Krishnan Raghavachari,G. S. Higashi,Yves J. Chabal,Gary W. Trucks	15
7	Ion Implanted Calibration Standards for Si Surface Contamination Detection by TXRF 1993 ·MRS Proceedings ·D. C. Jacobson,J. M. Poate,G. S. Higashi,T. Boone,D. J. Eaglesham,(unknown)	2
8	Improvement in heteroepitaxial film quality by a novel substrate patterning geometry 1992 ·Applied Physics Letters ·R. Hull,J. C. Bean,G. S. Higashi,(unknown),L. J. Peticolas,D. Bahnck,D. Brasen	32
9	Current gain enhancement in bipolar transistors by low-energy ion beam modification of the polycrystalline silicon emitter 1991 ·Applied Physics Letters ·Bahram Jalali,C. A. King,G. S. Higashi,J. C. Bean,R. Hull,Y. F. Hsieh,J. M. Macaulay,J. M. Poate	2
10	Selective electroless copper metallization of palladium silicide on silicon substrates 1991 ·Applied Physics Letters ·(unknown),Benjamin L. Miller,L. C. Feldman,B. E. Weir,G. S. Higashi,Eugene A. Fitzgerald,T. Boone,C. J. Doherty,R. B. van Dover	11
11	Ideal hydrogen termination of the Si (111) surfacebreakdown → 1990 ·Applied Physics Letters ·G. S. Higashi,Yves J. Chabal,Gary W. Trucks,Krishnan Raghavachari	1181
12	Monitoring low-coverage surface chemistry with bulk transport:NO2dissociation and oxygen penetration at a GaAs(110) surface 1990 ·Physical review. B, Condensed matter ·A. vom Felde,C. C. Bahr,Klaus Kern,G. S. Higashi,Yves J. Chabal,M. J. Cardillo	4
13	Oxidation of GaAs(110) withNO2: Infrared spectroscopy 1990 ·Physical review. B, Condensed matter ·A. vom Felde,Klaus Kern,G. S. Higashi,Yves J. Chabal,S. B. Christman,C. C. Bahr,M. J. Cardillo	22
14	Atomic-scale conversion of clean Si(111):H-1×1 to Si(111)-2×1 by electron-stimulated desorption 1990 ·Physical Review Letters ·R. S. Becker,G. S. Higashi,Yves J. Chabal,(unknown)	293
15	Laser projection patterned aluminum metallization for integrated circuit applications 1987 ·Applied Physics Letters ·G. E. Blonder,G. S. Higashi,Cass Fleming	31
16	Thermal disordering of langmuir-blodgett films of cadmium stearate on sapphire 1987 ·Chemical Physics Letters ·Lewis J. Rothberg,G. S. Higashi,David L. Allara,Stephen Garoff	31
17	New Reconstructions on Silicon (111) Surfaces 1986 ·Physical Review Letters ·R. S. Becker,J. A. Golovchenko,G. S. Higashi,B. S. Swartzentruber	125
18	Excitation-energy dependence of the photoluminescence total-light decay in arsenic chalcogenides 1983 ·Philosophical Magazine B ·G. S. Higashi,M. A. Kastner	49
19	Higashi and Kastner Respond: 1982 ·Physical Review Letters ·G. S. Higashi,M. A. Kastner	1
20	Measurement of the time evolution of the photoluminescence spectrum ofa-As2S3 1981 ·Physical review. B, Condensed matter ·G. S. Higashi,M. A. Kastner	29

About G. S. Higashi

G. S. Higashi is a scholar working on Surfaces, Coatings and Films, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 73 papers that have together received 6.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (30 papers), Silicon Nanostructures and Photoluminescence (14 papers) and Force Microscopy Techniques and Applications (8 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (2.5k citations), Surfaces, Coatings and Films (554 citations) and Structural Biology (108 citations). G. S. Higashi has collaborated with scholars based in United States, Germany and France. Frequent co-authors include Yves J. Chabal, Krishnan Raghavachari, Gary W. Trucks, R. S. Becker, V. A. Burrows, P. Dumas, Cass Fleming, S. B. Christman, M. A. Kastner and K. Raghavachari. Their work appears in journals such as Physical Review Letters, The Journal of Chemical Physics and Physical review. B, Condensed matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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