G. S. Higashi

7.4k total citations · 4 hit papers
73 papers, 6.1k citations indexed

About

G. S. Higashi is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G. S. Higashi has authored 73 papers receiving a total of 6.1k indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 32 papers in Materials Chemistry and 23 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G. S. Higashi's work include Semiconductor materials and devices (30 papers), Silicon Nanostructures and Photoluminescence (14 papers) and Force Microscopy Techniques and Applications (8 papers). G. S. Higashi is often cited by papers focused on Semiconductor materials and devices (30 papers), Silicon Nanostructures and Photoluminescence (14 papers) and Force Microscopy Techniques and Applications (8 papers). G. S. Higashi collaborates with scholars based in United States, Germany and France. G. S. Higashi's co-authors include Yves J. Chabal, Krishnan Raghavachari, Gary W. Trucks, R. S. Becker, V. A. Burrows, P. Dumas, Cass Fleming, S. B. Christman, M. A. Kastner and K. Raghavachari and has published in prestigious journals such as Physical Review Letters, The Journal of Chemical Physics and Physical review. B, Condensed matter.

In The Last Decade

G. S. Higashi

71 papers receiving 5.8k citations

Hit Papers

4 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Ideal hydrogen termination of the Si (111) surface

1990 1.2k citations G. S. Higashi, Yves J. Chabal et al. Applied Physics Letters profile →
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

1989 575 citations Yves J. Chabal, G. S. Higashi et al. profile →
Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HF

1991 422 citations G. S. Higashi, R. S. Becker et al. Applied Physics Letters profile →
Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology

1988 387 citations V. A. Burrows, Yves J. Chabal et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G. S. Higashi United States	32	4.3k	2.9k	2.5k	1.4k	676	73	6.1k
H. Wagner Germany	42	4.5k 1.0×	4.1k 1.4×	1.8k 0.7×	708 0.5×	480 0.7×	162	6.3k
J. C. Tsang United States	40	3.6k 0.8×	3.1k 1.1×	2.5k 1.0×	2.1k 1.5×	360 0.5×	122	6.6k
V. R. Deline United States	39	3.0k 0.7×	2.6k 0.9×	1.1k 0.5×	433 0.3×	840 1.2×	108	4.9k
C. R. Helms United States	37	2.9k 0.7×	1.7k 0.6×	1.6k 0.7×	577 0.4×	548 0.8×	164	4.4k
J. M. Woodall United States	47	5.8k 1.3×	2.1k 0.7×	5.3k 2.2×	801 0.6×	235 0.3×	268	7.6k
M. Henzler Germany	42	2.3k 0.5×	1.9k 0.6×	4.3k 1.7×	839 0.6×	463 0.7×	165	6.1k
E. Bertagnolli Austria	33	2.5k 0.6×	1.2k 0.4×	1.4k 0.6×	1.2k 0.9×	573 0.8×	230	4.2k
S. M. Gates United States	35	2.3k 0.5×	2.0k 0.7×	1.5k 0.6×	356 0.3×	396 0.6×	82	3.8k
Tomihiro Hashizume Japan	38	2.0k 0.5×	2.7k 0.9×	2.8k 1.1×	1.1k 0.8×	173 0.3×	206	5.8k
P. Soukiassian France	38	3.1k 0.7×	2.3k 0.8×	2.0k 0.8×	487 0.4×	291 0.4×	220	5.0k

Countries citing papers authored by G. S. Higashi

Since Specialization

Citations

This map shows the geographic impact of G. S. Higashi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. S. Higashi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. S. Higashi more than expected).

Fields of papers citing papers by G. S. Higashi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. S. Higashi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. S. Higashi. The network helps show where G. S. Higashi may publish in the future.

Co-authorship network of co-authors of G. S. Higashi

This figure shows the co-authorship network connecting the top 25 collaborators of G. S. Higashi. A scholar is included among the top collaborators of G. S. Higashi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. S. Higashi. G. S. Higashi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kayes, Brendan M., Hui Nie, S.G. Spruytte, et al.. (2011). 27.6% Conversion efficiency, a new record for single-junction solar cells under 1 sun illumination. 4–8. 352 indexed citations

Kizilyalli, I.C., Gary R. Weber, Zhaozhong Chen, et al.. (2002). Multi-level metal CMOS manufacturing with deuterium for improved hot carrier reliability. 935–938. 3 indexed citations

Tang, Mau‐Tsu, K. Evans‐Lutterodt, D. Brasen, et al.. (1994). Growth temperature dependence of the Si(001)/SiO2 interface width. Applied Physics Letters. 64(6). 748–750. 21 indexed citations

Pietsch, G. J., G. S. Higashi, & Yves J. Chabal. (1994). Chemomechanical polishing of silicon: Surface termination and mechanism of removal. Applied Physics Letters. 64(23). 3115–3117. 75 indexed citations

Higashi, G. S., et al.. (1993). Surface chemical cleaning and passivation for semiconductor processing. 27 indexed citations

Stevie, F. A., et al.. (1993). Effect of Hot Water Exposure on Bare Silicon Surfaces in Mos Processing. MRS Proceedings. 315(1). 485–490. 5 indexed citations

Hull, R., J. C. Bean, G. S. Higashi, et al.. (1992). Improvement in heteroepitaxial film quality by a novel substrate patterning geometry. Applied Physics Letters. 60(12). 1468–1470. 32 indexed citations

Miller, Benjamin L., L. C. Feldman, B. E. Weir, et al.. (1991). Selective electroless copper metallization of palladium silicide on silicon substrates. Applied Physics Letters. 59(26). 3449–3451. 11 indexed citations

Chabal, Yves J., P. Dumas, Philippe Guyot‐Sionnest, & G. S. Higashi. (1991). Vibrational dynamics of the ideally H-terminated Si(111) surface. Surface Science. 242(1-3). 524–530. 49 indexed citations

10.

Jalali, Bahram, C. A. King, G. S. Higashi, et al.. (1991). Current gain enhancement in bipolar transistors by low-energy ion beam modification of the polycrystalline silicon emitter. Applied Physics Letters. 58(18). 2009–2011. 2 indexed citations

11.

Felde, A. vom, C. C. Bahr, Klaus Kern, et al.. (1990). Monitoring low-coverage surface chemistry with bulk transport:NO2dissociation and oxygen penetration at a GaAs(110) surface. Physical review. B, Condensed matter. 42(10). 6865–6868. 4 indexed citations

12.

Felde, A. vom, Klaus Kern, G. S. Higashi, et al.. (1990). Oxidation of GaAs(110) withNO2: Infrared spectroscopy. Physical review. B, Condensed matter. 42(8). 5240–5248. 22 indexed citations

13.

Higashi, G. S., Yves J. Chabal, Gary W. Trucks, & Krishnan Raghavachari. (1990). Ideal hydrogen termination of the Si (111) surface. Applied Physics Letters. 56(7). 656–658. 1181 indexed citations breakdown →

14.

Higashi, G. S., et al.. (1990). Improved minority-carrier lifetime in Si/SiGe heterojunction bipolar transistors grown by molecular beam epitaxy. Applied Physics Letters. 56(25). 2560–2562. 15 indexed citations

15.

Burrows, V. A., Yves J. Chabal, G. S. Higashi, K. Raghavachari, & S. B. Christman. (1988). Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology. Applied Physics Letters. 53(11). 998–1000. 387 indexed citations breakdown →

16.

Blonder, G. E., G. S. Higashi, & Cass Fleming. (1987). Laser projection patterned aluminum metallization for integrated circuit applications. Applied Physics Letters. 50(12). 766–768. 31 indexed citations

17.

Becker, R. S., J. A. Golovchenko, G. S. Higashi, & B. S. Swartzentruber. (1986). New Reconstructions on Silicon (111) Surfaces. Physical Review Letters. 57(8). 1020–1023. 125 indexed citations

18.

Higashi, G. S. & M. A. Kastner. (1983). Excitation-energy dependence of the photoluminescence total-light decay in arsenic chalcogenides. Philosophical Magazine B. 47(1). 83–98. 49 indexed citations

19.

Becker, R. S., G. S. Higashi, & J. A. Golovchenko. (1983). Low Energy Electron Diffraction During Pulsed Laser Annealing: A Time Resolved Surface Structural Study. MRS Proceedings. 23. 1 indexed citations

20.

Higashi, G. S. & M. A. Kastner. (1981). Measurement of the time evolution of the photoluminescence spectrum ofa-As2S3. Physical review. B, Condensed matter. 24(4). 2295–2298. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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