Y. Ma

415 total citations
17 papers, 320 citations indexed

About

Y. Ma is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Y. Ma has authored 17 papers receiving a total of 320 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Y. Ma's work include Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). Y. Ma is often cited by papers focused on Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). Y. Ma collaborates with scholars based in United States, Germany and China. Y. Ma's co-authors include G. Lucovsky, S. Habermehl, Tetsuji Yasuda, J.S. Yuan, A. S. Oates, D. Monroe, F.H. Baumann, P. J. Silvėrman, Abdullah Hamad and J. Bude and has published in prestigious journals such as Applied Physics Letters, Journal of Non-Crystalline Solids and Solid-State Electronics.

In The Last Decade

Y. Ma

14 papers receiving 310 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Y. Ma United States 9 307 147 37 37 13 17 320
G. Weidner Germany 10 281 0.9× 171 1.2× 72 1.9× 37 1.0× 31 2.4× 37 315
D. Wristers United States 9 344 1.1× 118 0.8× 37 1.0× 26 0.7× 16 1.2× 25 354
Tsunehiro Ino Japan 11 447 1.5× 152 1.0× 80 2.2× 44 1.2× 19 1.5× 27 487
Katsunori Onishi United States 5 358 1.2× 118 0.8× 37 1.0× 52 1.4× 6 0.5× 10 369
L.B. La United States 7 399 1.3× 170 1.2× 48 1.3× 42 1.1× 10 0.8× 13 413
Elke Erben Germany 12 347 1.1× 170 1.2× 31 0.8× 44 1.2× 12 0.9× 31 364
Patrick M. Lenahan United States 12 656 2.1× 283 1.9× 56 1.5× 29 0.8× 7 0.5× 26 691
M. Bude United States 4 392 1.3× 217 1.5× 42 1.1× 55 1.5× 12 0.9× 5 409
Taeko Ikarashi Japan 13 319 1.0× 172 1.2× 99 2.7× 25 0.7× 39 3.0× 24 373
D. T. Krick United States 7 473 1.5× 303 2.1× 75 2.0× 47 1.3× 23 1.8× 11 491

Countries citing papers authored by Y. Ma

Since Specialization
Citations

This map shows the geographic impact of Y. Ma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Ma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Ma more than expected).

Fields of papers citing papers by Y. Ma

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Ma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Ma. The network helps show where Y. Ma may publish in the future.

Co-authorship network of co-authors of Y. Ma

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Ma. A scholar is included among the top collaborators of Y. Ma based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Ma. Y. Ma is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Cheng, Yu–Hsiang, Li‐Yin Chen, Y. Ma, et al.. (2025). Improved performance of highly sensitive room-temperature ammonia gas sensor with P-type doping carbazole-triazine derivative. Journal of the Taiwan Institute of Chemical Engineers. 174. 106197–106197.
2.
Ma, Y., et al.. (2024). Dynamic Analysis Strategy of Generalized Deployable Units via NCF-IGA with Force Constraint. International Journal of Structural Stability and Dynamics. 25(10).
3.
Poudel, Bed, Qing Hao, Y. Ma, et al.. (2008). High Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys.. Bulletin of the American Physical Society. 2 indexed citations
4.
Weir, B. E., P. J. Silvėrman, Muhammad A. Alam, et al.. (2003). Gate oxides in 50 nm devices: thickness uniformity improves projected reliability. 437–440. 14 indexed citations
5.
Weir, B. E., Md Ashraful Alam, P. J. Silvėrman, et al.. (2002). Ultra-thin gate oxide reliability projections. Solid-State Electronics. 46(3). 321–328. 10 indexed citations
6.
Yuan, J.S., et al.. (2001). Modeling of direct tunneling and surface roughness effects on C–V characteristics of ultra-thin gate MOS capacitors. Solid-State Electronics. 45(2). 373–377. 16 indexed citations
7.
Weir, B. E., Md Ashraful Alam, J. Bude, et al.. (2000). Gate oxide reliability projection to the sub-2 nm regime. Semiconductor Science and Technology. 15(5). 455–461. 66 indexed citations
8.
Yuan, J.S., et al.. (2000). Design optimization of stacked layer dielectrics for minimum gate leakage currents. Solid-State Electronics. 44(12). 2165–2170. 22 indexed citations
9.
Yuan, J.S., et al.. (2000). Modeling short channel effect on high-k and stacked-gate MOSFETs. Solid-State Electronics. 44(11). 2089–2091. 16 indexed citations
10.
Weir, B. E., P. J. Silvėrman, G. B. Alers, et al.. (1999). Soft Breakdown in Ultra-Thin Oxides. MRS Proceedings. 567. 5 indexed citations
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12.
13.
Yasuda, Tetsuji, C. H. Björkman, Y. Ma, et al.. (1993). A Low-Temperature Process for Device Quality Si/SiO2 Interfaces On Si(111). MRS Proceedings. 315(1). 375–380. 2 indexed citations
14.
Yasuda, Tetsuji, Y. Ma, S. Habermehl, & G. Lucovsky. (1992). Low-temperature formation of device-quality SiO2/Si interfaces by a two-step remote plasma-assisted oxidation/deposition process. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(4). 1844–1851. 35 indexed citations
15.
16.
Yasuda, Tetsuji, Y. Ma, S. Habermehl, & G. Lucovsky. (1992). Low-temperature preparation of SiO2/Si(100) interfaces using a two-step remote plasma-assisted oxidation-deposition process. Applied Physics Letters. 60(4). 434–436. 110 indexed citations
17.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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