G.L. Hash

2.1k total citations
48 papers, 1.6k citations indexed

About

G.L. Hash is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Safety, Risk, Reliability and Quality. According to data from OpenAlex, G.L. Hash has authored 48 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 8 papers in Hardware and Architecture and 3 papers in Safety, Risk, Reliability and Quality. Recurrent topics in G.L. Hash's work include Radiation Effects in Electronics (34 papers), Semiconductor materials and devices (34 papers) and Integrated Circuits and Semiconductor Failure Analysis (27 papers). G.L. Hash is often cited by papers focused on Radiation Effects in Electronics (34 papers), Semiconductor materials and devices (34 papers) and Integrated Circuits and Semiconductor Failure Analysis (27 papers). G.L. Hash collaborates with scholars based in United States, France and Canada. G.L. Hash's co-authors include M.R. Shaneyfelt, P.E. Dodd, F.W. Sexton, J.R. Schwank, P.S. Winokur, Daniel M. Fleetwood, B.L. Draper, D.S. Walsh, J. Baggio and Philippe Paillet and has published in prestigious journals such as IEEE Transactions on Nuclear Science, OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) and ESASP.

In The Last Decade

G.L. Hash

45 papers receiving 1.5k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
G.L. Hash 1.6k 339 136 98 85 48 1.6k
J.M. Palau 1.6k 1.0× 451 1.3× 99 0.7× 121 1.2× 72 0.8× 79 1.7k
James R. Schwank 1.6k 1.0× 242 0.7× 132 1.0× 128 1.3× 86 1.0× 50 1.6k
Jonathan A. Pellish 1.5k 0.9× 371 1.1× 174 1.3× 79 0.8× 125 1.5× 102 1.5k
T. Carrière 811 0.5× 177 0.5× 94 0.7× 73 0.7× 49 0.6× 37 925
C.M. Seidleck 1.2k 0.8× 280 0.8× 174 1.3× 66 0.7× 89 1.0× 64 1.3k
Gilles Gasiot 1.7k 1.1× 726 2.1× 134 1.0× 47 0.5× 68 0.8× 89 1.7k
David F. Heidel 1.0k 0.7× 379 1.1× 145 1.1× 54 0.6× 83 1.0× 54 1.2k
Brian D. Sierawski 1.6k 1.0× 368 1.1× 232 1.7× 101 1.0× 166 2.0× 73 1.7k
Ray Ladbury 1.0k 0.6× 227 0.7× 101 0.7× 73 0.7× 67 0.8× 83 1.1k
Kevin M. Warren 2.0k 1.2× 656 1.9× 238 1.8× 86 0.9× 180 2.1× 60 2.1k

Countries citing papers authored by G.L. Hash

Since Specialization
Citations

This map shows the geographic impact of G.L. Hash's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.L. Hash with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.L. Hash more than expected).

Fields of papers citing papers by G.L. Hash

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G.L. Hash. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.L. Hash. The network helps show where G.L. Hash may publish in the future.

Co-authorship network of co-authors of G.L. Hash

This figure shows the co-authorship network connecting the top 25 collaborators of G.L. Hash. A scholar is included among the top collaborators of G.L. Hash based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G.L. Hash. G.L. Hash is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Schwank, James R., M.R. Shaneyfelt, Daniel M. Fleetwood, et al.. (2008). Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging. IEEE Transactions on Nuclear Science. 55(6). 3206–3215. 6 indexed citations
2.
Dodd, P.E., J.R. Schwank, M.R. Shaneyfelt, et al.. (2007). Heavy Ion Energy Effects in CMOS SRAMs. IEEE Transactions on Nuclear Science. 54(4). 889–893. 35 indexed citations
3.
Felix, James A., P.E. Dodd, M.R. Shaneyfelt, James R. Schwank, & G.L. Hash. (2006). Radiation Response and Variability of Advanced Commercial Foundry Technologies. IEEE Transactions on Nuclear Science. 53(6). 3187–3194. 17 indexed citations
4.
Schwank, J.R., M.R. Shaneyfelt, J. Baggio, et al.. (2005). Effects of particle energy on proton-induced single-event latchup. IEEE Transactions on Nuclear Science. 52(6). 2622–2629. 88 indexed citations
5.
Shaneyfelt, M.R., Paiboon Tangyunyong, Matthew Jerry, et al.. (2004). Identification of Radiation-Induced Parasitic Leakage Paths Using Light Emission Microscopy. ESASP. 536. 113. 1 indexed citations
6.
Dodd, P.E., M.R. Shaneyfelt, J.R. Schwank, & G.L. Hash. (2003). Neutron-induced soft errors, latchup, and comparison of SER test methods for SRAM technologies. 333–336. 53 indexed citations
7.
8.
Schwank, J.R., P.E. Dodd, M.R. Shaneyfelt, et al.. (2002). Charge collection in SOI capacitors and circuits and its effect on SEU hardness. IEEE Transactions on Nuclear Science. 49(6). 2937–2947. 44 indexed citations
9.
Shaneyfelt, M.R., R.L. Pease, J.R. Schwank, et al.. (2002). Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs. IEEE Transactions on Nuclear Science. 49(6). 3171–3179. 68 indexed citations
10.
Hash, G.L., M.R. Shaneyfelt, F.W. Sexton, & P.S. Winokur. (2002). Radiation hardness assurance categories for COTS technologies. 35–40. 12 indexed citations
11.
Dodd, P.E., M.R. Shaneyfelt, James R. Schwank, et al.. (2000). Single-event upset and snapback in silicon-on-insulator devices. University of North Texas Digital Library (University of North Texas). 3 indexed citations
12.
Shaneyfelt, M.R., James R. Schwank, S.C. Witczak, et al.. (2000). Thermal-stress effects on enhanced low-dose-rate sensitivity of linear bipolar circuits. University of North Texas Digital Library (University of North Texas). 5 indexed citations
13.
Shaneyfelt, M.R., S.C. Witczak, Daniel M. Fleetwood, et al.. (2000). Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs. IEEE Transactions on Nuclear Science. 47(6). 2539–2545. 70 indexed citations
14.
Winokur, P.S., et al.. (1999). Use of COTS microelectronics in radiation environments. IEEE Transactions on Nuclear Science. 46(6). 1494–1503. 33 indexed citations
15.
Griffin, Patrick, et al.. (1997). The role of thermal and fission neutrons in reactor neutron-induced upsets in commercial SRAMs. IEEE Transactions on Nuclear Science. 44(6). 2079–2086. 23 indexed citations
16.
Shaneyfelt, M.R., P.S. Winokur, Daniel M. Fleetwood, et al.. (1997). Impact of aging on radiation hardness[CMOS SRAMs]. IEEE Transactions on Nuclear Science. 44(6). 2040–2047. 27 indexed citations
17.
Sexton, F.W., et al.. (1994). SEU and SEL response of the Westinghouse 64K E-2PROM, analog devices AD7876 12-bit ADC, and the Intel 82527 Serial Communications Controller. 18–22.
18.
Hash, G.L., et al.. (1991). Transient radiation hardness of the CMOSV 1.25 micron technology. IEEE Transactions on Nuclear Science. 38(6). 1392–1397. 7 indexed citations
19.
Winokur, P.S., F.W. Sexton, & G.L. Hash. (1987). Failure mechanisms of integrated circuits in space. 1 indexed citations
20.
Wrobel, T. F., et al.. (1985). Current Induced Avalanche in Epitaxial Structures. IEEE Transactions on Nuclear Science. 32(6). 3991–3995. 49 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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