K.P. MacWilliams

890 citations

36 papers · 658 indexed · h-index 11

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Radiation Effects in Electronics
- Silicon and Solar Cell Technologies
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 35
- Semiconductor materials and devices 28
- Advancements in Semiconductor Devices and Circuit Design 18
- Integrated Circuits and Semiconductor Failure Analysis 7
- 3D IC and TSV technologies 5
- Silicon and Solar Cell Technologies 5
- Silicon Carbide Semiconductor Technologies 5
Ceramics and Composites 2

Co-authors: J.C.S. Woo Deepak Kumar Nayak J. S. Park J.D. Plummer William R. Crain S. D. LaLumondiere R. Koga Steven C. Moss
Journals: IEEE Electron Device Letters (5 papers)IEEE Transactions on Electron Devices (3 papers)IEEE Transactions on Nuclear Science (2 papers)IEEE Transactions on Semiconductor Manufacturing (1 paper)Applied Physics Letters (1 paper)
Partner nations: United States Japan South Korea

In The Last Decade

K.P. MacWilliams

29 papers receiving 628 citations

Peers

Countries citing papers authored by K.P. MacWilliams

Since Specialization

Citations

This map shows the geographic impact of K.P. MacWilliams's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.P. MacWilliams with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.P. MacWilliams more than expected).

Fields of papers citing papers by K.P. MacWilliams

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.P. MacWilliams. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.P. MacWilliams. The network helps show where K.P. MacWilliams may publish in the future.

Co-authorship network

The 25 scholars most cited alongside K.P. MacWilliams, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K.P. MacWilliams Line = papers co-authored together K.P. MacWilliams links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Use of E-Beam Lithography to Optimize Lithography Patterning on SiC Wafers IEEE Transactions on Semiconductor Manufacturing ·M. Diachenko, Jonathan Fernández, 諛뺥삎以, Marina A. Turrin, Zhong Chen, Nelson Enrique Conde Parada, 黄国祥, K.P. MacWilliams	2025	1
2	Transcending the Reticle Limit in On-Wafer Die Integration and Advanced Packaging: Full-Wafer Patterning with High-Productivity Electron Beam Lithography David Magaña Lemus, 黄国祥, K.P. MacWilliams, Nelson Enrique Conde Parada, David Lam, Jonathan Sebat, Suresh Gunadal, Natalie S. Olesnicky, Inés Martín-Barrio	2024	0
3	High-productivity direct-write e-beam lithography: an enabling patterning technology to augment your lithography toolbox K.P. MacWilliams, 黄国祥, Nelson Enrique Conde Parada, David Lam	2023	3
4	Production ready noval texture etching process for fabrication of single crystalline silicon solar cells Arianna Introna, Timothy W. Weidman, Louis Ernest Slesin, K.P. MacWilliams	2010	13
5	Effects of UV cure on glass structure and fracture properties of nanoporous carbon-doped oxide thin films Journal of Applied Physics ·David M. Gage, Jonathan F. Stebbins, Luming Peng, S. L. Voitsekhovsky, A. Al-Bayati, K.P. MacWilliams, Harry Balda Zambrano, Reinhold H. Dauskardt	2008	29
6	Can GaAs ICs achieve Si VLSI reliability? K.P. MacWilliams, Bruce K. Janousek	2003	0
7	CMOS hot-carrier degradation and device lifetime at cryogenic temperatures Mackean, R.C. Lacoe, K.P. MacWilliams, Mejouyo Paul Huisken	2002	1
8	Footing reduction of positive deep-UV photoresists on plasma-enhanced ARL (PE ARL) SiON substrates Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·T. A. Targett, Felipe Pinheiro Correia, R.O. Moody, Molly Kathleen Powers, B V Manjunath, Judith Zimmer, K.P. MacWilliams, Mamyrah A. Dougé-Prosper	1998	3
9	New understanding of LDD NMOS hot-carrier degradation and device lifetime at cryogenic temperatures Microelectronics Reliability ·Mackean, R.C. Lacoe, K.P. MacWilliams, Mejouyo Paul Huisken, Stephanie Brown, Prathan Leucha	1997	2
10	Comparison of NMOS and PMOS hot carrier effects from 300 to 77 K IEEE Transactions on Electron Devices ·Mejouyo Paul Huisken, K.P. MacWilliams, J.C.S. Woo	1997	63
11	Hole confinement in a Si/GeSi/Si quantum well on SIMOX IEEE Transactions on Electron Devices ·Deepak Kumar Nayak, J.C.S. Woo, E Vigil, Danilo da Silva Dutra, K.P. MacWilliams	1996	7
12	Quantifying ESD/EOS latent damage and integrated circuit leakage currents Mejouyo Paul Huisken, D. Eng, K.P. MacWilliams	1995	10
13	<title>One-micrometer, radiation-hardened complementary metal oxide semiconductor for cryogenic analog applications</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Sandino Escobar, George Brown, G. Pollack, Fisca Ardi Prasetiawati, F Espejo, Arvind I. D'Souza, 藤原直之, Mejouyo Paul Huisken, Chun Hwang, Jason C. S. Woo, K.P. MacWilliams	1994	1
14	High-Mobility p-Channel MOSFET on Strained Si Deepak Kumar Nayak, J.C.S. Woo, 金玉红, Rebecca Evans, K.P. MacWilliams	1993	2
15	High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si Applied Physics Letters ·Deepak Kumar Nayak, J.C.S. Woo, J. S. Park, Charlie Ward, K.P. MacWilliams	1993	116
16	Device physics and technology of complementary silicon MESFET's for VLSI applications IEEE Transactions on Electron Devices ·K.P. MacWilliams, J.D. Plummer	1991	27
17	Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS IEEE Electron Device Letters ·Deepak Kumar Nayak, J.C.S. Woo, Antonio Lucas R. Santos, X. Guo, K.P. MacWilliams	1991	144
18	Enhanced Gate Oxide Reliability through Fluorine Incorporation and the Influence of Polysilicon Process Variations MRS Proceedings ·K.P. MacWilliams, 俊己小西, Laurie Beth Donnachie, Mejouyo Paul Huisken, Emmanuel Ayomide, Stephanie Brown	1991	2
19	Improved yield and reliability in aluminum interconnects through fluorine incorporation K.P. MacWilliams, 俊己小西, M. C. Perillo Isaac, 弘鳴戸, Ivana Lucia Kharisma	1990	4
20	Improved hot-carrier resistance with fluorinated gate oxides IEEE Electron Device Letters ·K.P. MacWilliams, L. F. Halle, Thomas C. Zietlow	1990	40

About K.P. MacWilliams

K.P. MacWilliams is a scholar working on Electrical and Electronic Engineering, Ceramics and Composites, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 36 papers that have together received 658 indexed citations. Recurring topics across this work include Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers), Copper Interconnects and Reliability (5 papers), Semiconductor materials and interfaces (5 papers), 3D IC and TSV technologies (5 papers), Silicon and Solar Cell Technologies (5 papers) and Silicon Carbide Semiconductor Technologies (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (608 citations), Atomic and Molecular Physics, and Optics (138 citations), Hardware and Architecture (17 citations), Ceramics and Composites (14 citations) and Electronic, Optical and Magnetic Materials (42 citations). K.P. MacWilliams has collaborated with scholars based in United States, Japan and South Korea. Frequent co-authors include J.C.S. Woo, Deepak Kumar Nayak, J. S. Park, J.D. Plummer, William R. Crain, S. D. LaLumondiere, R. Koga, Steven C. Moss, Thomas C. Zietlow and L. F. Halle. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Nuclear Science, IEEE Transactions on Semiconductor Manufacturing and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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