M. L. Green

516 total citations
17 papers, 388 citations indexed

About

M. L. Green is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. L. Green has authored 17 papers receiving a total of 388 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in M. L. Green's work include Semiconductor materials and devices (12 papers), Semiconductor materials and interfaces (5 papers) and Silicon and Solar Cell Technologies (5 papers). M. L. Green is often cited by papers focused on Semiconductor materials and devices (12 papers), Semiconductor materials and interfaces (5 papers) and Silicon and Solar Cell Technologies (5 papers). M. L. Green collaborates with scholars based in United States, Germany and Canada. M. L. Green's co-authors include D. Brasen, M. E. Gross, R. Lévy, N. Lifshitz, V. Kannan, H. S. Luftman, L. C. Feldman, B. E. Weir, Ya Xie and Eugene A. Fitzgerald and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

M. L. Green

16 papers receiving 367 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. L. Green United States 9 325 163 108 87 43 17 388
A.A. Wronkowska Poland 12 232 0.7× 154 0.9× 72 0.7× 120 1.4× 51 1.2× 38 378
B. Blanchard France 12 254 0.8× 143 0.9× 47 0.4× 120 1.4× 23 0.5× 35 382
Goro Shimaoka Japan 12 253 0.8× 344 2.1× 101 0.9× 67 0.8× 12 0.3× 34 409
L.G. Gosset France 12 445 1.4× 209 1.3× 187 1.7× 65 0.7× 63 1.5× 37 508
Eda Goldenberg Türkiye 12 341 1.0× 232 1.4× 101 0.9× 67 0.8× 41 1.0× 31 463
Pengshou Xu China 11 223 0.7× 348 2.1× 148 1.4× 61 0.7× 26 0.6× 66 459
Mudassar Meer India 12 191 0.6× 177 1.1× 129 1.2× 83 1.0× 24 0.6× 24 406
Benjamin French United States 15 366 1.1× 260 1.6× 181 1.7× 88 1.0× 64 1.5× 25 527
B. Meyer Germany 10 229 0.7× 271 1.7× 66 0.6× 32 0.4× 21 0.5× 27 381
Chunlin Chai China 11 194 0.6× 381 2.3× 160 1.5× 93 1.1× 18 0.4× 36 458

Countries citing papers authored by M. L. Green

Since Specialization
Citations

This map shows the geographic impact of M. L. Green's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. L. Green with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. L. Green more than expected).

Fields of papers citing papers by M. L. Green

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. L. Green. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. L. Green. The network helps show where M. L. Green may publish in the future.

Co-authorship network of co-authors of M. L. Green

This figure shows the co-authorship network connecting the top 25 collaborators of M. L. Green. A scholar is included among the top collaborators of M. L. Green based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. L. Green. M. L. Green is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Emerson, A. B., Yanjun Ma, Michael L. Wise, M. L. Green, & S. W. Downey. (1996). Surface analysis, depth profiling, and evaluation of Si cleaning procedures by postionization sputtered neutral mass spectrometry. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(1). 301–304. 1 indexed citations
2.
Ma, Yuhang, M. L. Green, R. L. Opila, et al.. (1995). In Situ Vapor Phase Pregate Oxide Cleaning and Its Effects on Metal‐Oxide‐Semiconductor Device Characteristics. Journal of The Electrochemical Society. 142(11). L217–L219. 8 indexed citations
3.
Tang, Hong, W. N. Lennard, M. Zinke-Allmang, et al.. (1994). Nitrogen content of oxynitride films on Si(100). Applied Physics Letters. 64(25). 3473–3475. 28 indexed citations
4.
Green, M. L., D. Brasen, H. S. Luftman, T. Boone, & K.S. Krisch. (1993). In-Situ Processing of Si Film Structures in a Rapid Thermal Chemical Vapor Deposition Reactor. MRS Proceedings. 303. 1 indexed citations
5.
Manchanda, L., Gary R. Weber, L. C. Feldman, et al.. (1993). A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices. Microelectronic Engineering. 22(1-4). 69–72. 6 indexed citations
6.
Moriya, N., C. A. King, L. C. Feldman, et al.. (1992). Boron Diffusion in Si1−x Gex Strained Layers. MRS Proceedings. 281.
7.
Fitzgerald, Eugene A., Ya Xie, M. L. Green, et al.. (1991). Strain-Free GexSi1−x Layers with Low Threading Dislocation Densities Grown on Si Substrates. MRS Proceedings. 220. 14 indexed citations
8.
Green, M. L., D. Brasen, M. Geva, et al.. (1990). Oxygen and carbon incorporation in low temperature epitaxial Si films grown by rapid thermal chemical vapor deposition (RTCVD). Journal of Electronic Materials. 19(10). 1015–1019. 4 indexed citations
9.
Fitzgerald, Eugene A., Ya Xie, D. Brasen, et al.. (1990). Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge x Si1-x grown on patterned Si substrates. Journal of Electronic Materials. 19(9). 949–955. 28 indexed citations
10.
Green, M. L., D. Brasen, H. Temkin, V. Kannan, & H. S. Luftman. (1989). High Quality Si and Sil-xGex, Films and Heterojunction Bipolar Transistors Grown by Rapid Thermal Chemical Vapor Deposition (RTCVD). MRS Proceedings. 146. 1 indexed citations
11.
Green, M. L., D. Brasen, H. S. Luftman, & V. Kannan. (1989). High-quality homoepitaxial silicon films deposited by rapid thermal chemical vapor deposition. Journal of Applied Physics. 65(6). 2558–2560. 28 indexed citations
12.
Green, M. L., et al.. (1988). Deposition, post-deposition annealing, and characterization of epitaxial Ge films grown on Si(100) by pyrolysis of GeH4. Journal of Electronic Materials. 17(3). 229–237. 10 indexed citations
13.
Lifshitz, N. & M. L. Green. (1988). Comparative Study of the Low Pressure Chemical Vapor Deposition Processes of W and Mo. Journal of The Electrochemical Society. 135(7). 1832–1836. 16 indexed citations
14.
Lévy, R. & M. L. Green. (1987). Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications. Journal of The Electrochemical Society. 134(2). 37C–49C. 32 indexed citations
15.
Lévy, R. & M. L. Green. (1986). Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications. MRS Proceedings. 71. 1 indexed citations
16.
Lévy, R., et al.. (1986). Selective LPCVD Tungsten for Contact Barrier Applications. Journal of The Electrochemical Society. 133(9). 1905–1912. 15 indexed citations
17.
Green, M. L., et al.. (1985). Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films. Journal of The Electrochemical Society. 132(11). 2677–2685. 195 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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