M.R. Pinto

3.5k total citations · 1 hit paper
82 papers, 2.5k citations indexed

About

M.R. Pinto is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, M.R. Pinto has authored 82 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 79 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 4 papers in Computational Mechanics. Recurrent topics in M.R. Pinto's work include Advancements in Semiconductor Devices and Circuit Design (55 papers), Semiconductor materials and devices (54 papers) and Silicon Carbide Semiconductor Technologies (19 papers). M.R. Pinto is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (55 papers), Semiconductor materials and devices (54 papers) and Silicon Carbide Semiconductor Technologies (19 papers). M.R. Pinto collaborates with scholars based in United States, Italy and Germany. M.R. Pinto's co-authors include R. T. Tung, James P. Sullivan, W. R. M. Graham, Randall K. Smith, R.W. Dutton, J. Bude, C.S. Rafferty, Serge Luryi, E. Sangiorgi and J. H. Werner and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M.R. Pinto

70 papers receiving 2.4k citations

Hit Papers

Electron transport of inhomogeneous Schottky barriers: A ... 1991 2026 2002 2014 1991 200 400 600
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Electron transport of inhomogeneous Schottky barriers: A numerical study
    1991 671 citations M.R. Pinto et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M.R. Pinto United States 24 2.3k 1.2k 281 174 125 82 2.5k
D.J. Roulston Canada 18 2.4k 1.0× 855 0.7× 492 1.8× 343 2.0× 124 1.0× 139 2.6k
Kelin J. Kuhn United States 27 2.5k 1.1× 747 0.6× 306 1.1× 591 3.4× 67 0.5× 75 2.9k
Christoph Jungemann Germany 24 2.4k 1.0× 603 0.5× 236 0.8× 214 1.2× 82 0.7× 232 2.5k
R.F. Pierret United States 20 1.6k 0.7× 703 0.6× 540 1.9× 449 2.6× 138 1.1× 73 2.0k
M. I. Lutwyche Japan 17 813 0.4× 1.1k 1.0× 413 1.5× 669 3.8× 107 0.9× 36 1.7k
H. Shichijo United States 28 2.9k 1.3× 1.4k 1.3× 457 1.6× 293 1.7× 163 1.3× 121 3.2k
J.A. Hutchby United States 21 1.8k 0.8× 722 0.6× 417 1.5× 315 1.8× 382 3.1× 85 2.2k
R. Kotlyar United States 26 1.9k 0.8× 639 0.6× 586 2.1× 566 3.3× 249 2.0× 56 2.4k
T. Skotnicki France 29 3.8k 1.6× 755 0.7× 610 2.2× 774 4.4× 61 0.5× 276 4.3k
T.H. Ning United States 32 4.9k 2.1× 870 0.8× 716 2.5× 546 3.1× 84 0.7× 142 5.2k

Countries citing papers authored by M.R. Pinto

Since Specialization
Citations

This map shows the geographic impact of M.R. Pinto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M.R. Pinto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M.R. Pinto more than expected).

Fields of papers citing papers by M.R. Pinto

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M.R. Pinto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M.R. Pinto. The network helps show where M.R. Pinto may publish in the future.

Co-authorship network of co-authors of M.R. Pinto

This figure shows the co-authorship network connecting the top 25 collaborators of M.R. Pinto. A scholar is included among the top collaborators of M.R. Pinto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M.R. Pinto. M.R. Pinto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Pinto, M.R.. (2002). Integrated communications microsystems. 1. 17–18. 1 indexed citations
3.
4.
Vuong, H.-H., C.S. Rafferty, W Mansfield, et al.. (2002). Modeling C-V shifts in boron/BF/sub 2/-implanted capacitors. 311. 807–810. 3 indexed citations
5.
Bude, J., A. Frommer, M.R. Pinto, & Gary R. Weber. (2002). EEPROM/flash sub 3.0 V drain-source bias hot carrier writing. 989–992. 21 indexed citations
6.
Howard, J.W., et al.. (2002). The effects of ion track structure in simulating single event phenomena. 509–516. 23 indexed citations
7.
Pinto, M.R., et al.. (1997). The transistor´s discovery and what´s ahead. European Solid-State Device Research Conference. 125–132. 1 indexed citations
8.
King, C. A., et al.. (1996). In situ arsenic-doped polycrystalline silicon as a low thermal budget emitter contact for Si/Si1−xGex heterojunction bipolar transistors. Applied Physics Letters. 68(2). 226–228. 2 indexed citations
9.
Pinto, M.R., E. Sangiorgi, & J. Bude. (1993). Silicon MOS transconductance scaling into the overshoot regime. IEEE Electron Device Letters. 14(8). 375–378. 42 indexed citations
10.
Lifshitz, N., Serge Luryi, M.R. Pinto, & C.S. Rafferty. (1993). Active-gate thin-film transistor. IEEE Electron Device Letters. 14(8). 394–395. 12 indexed citations
11.
Bokor, Jeffrey, et al.. (1992). Ultrashallow junctions for ULSI using As/sub 2//sup +/ implantation and rapid thermal anneal. IEEE Electron Device Letters. 13(10). 507–509. 10 indexed citations
12.
Schubert, E. Fred, Li Tu, G. J. Zydzik, et al.. (1992). Elimination of heterojunction band discontinuities by modulation doping. Applied Physics Letters. 60(4). 466–468. 57 indexed citations
13.
Coughran, W.M., M.R. Pinto, & Randall K. Smith. (1989). Continuation methods in semiconductor device simulation. Journal of Computational and Applied Mathematics. 26(1-2). 47–65. 10 indexed citations
14.
Sangiorgi, E., M.R. Pinto, F. Venturi, & Wolf Fïchtner. (1988). A hot-carrier analysis of submicrometer MOSFET's. IEEE Electron Device Letters. 9(1). 13–16. 20 indexed citations
15.
Sangiorgi, E., M.R. Pinto, S.E. Swirhun, & R.W. Dutton. (1985). Two-dimensional numerical analysis of latchup in a VLSI CMOS technology. IEEE Transactions on Electron Devices. 32(10). 2117–2130. 20 indexed citations
16.
Pinto, M.R. & R.W. Dutton. (1985). Accurate trigger condition analysis for CMOS latchup. IEEE Electron Device Letters. 6(2). 100–102. 32 indexed citations
17.
Rafferty, C.S., M.R. Pinto, & R.W. Dutton. (1985). Iterative methods in semiconductor device simulation. IEEE Transactions on Electron Devices. 32(10). 2018–2027. 53 indexed citations
18.
Sangiorgi, E., S. Swirhun, M.R. Pinto, et al.. (1984). IIB-8 high-performance latchup-free CMOS. IEEE Transactions on Electron Devices. 31(12). 1967–1967. 1 indexed citations
19.
Pinto, M.R. & R.W. Dutton. (1983). An efficient numerical model of CMOS latch-up. IEEE Electron Device Letters. 4(11). 414–417. 10 indexed citations
20.
Hu, G.J., et al.. (1982). VA-6 two-dimensional simulation of latch-up in CMOS structure. IEEE Transactions on Electron Devices. 29(10). 1695–1695. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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