D. Monroe

2.5k total citations · 1 hit paper
39 papers, 1.7k citations indexed

About

D. Monroe is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. Monroe has authored 39 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. Monroe's work include Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). D. Monroe is often cited by papers focused on Semiconductor materials and devices (28 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (8 papers). D. Monroe collaborates with scholars based in United States, Germany and Norway. D. Monroe's co-authors include J. M. Hergenrother, P. J. Silvėrman, B. E. Weir, Sang‐Hyun Oh, T. Erdoğan, V. Mizrahi, P. J. Lemaire, Eugene A. Fitzgerald, Ya‐Hong Xie and A. R. Kortan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

D. Monroe

39 papers receiving 1.6k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

1992 441 citations Eugene A. Fitzgerald, D. Monroe et al. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena profile →

Peers

Countries citing papers authored by D. Monroe

Since Specialization

Citations

This map shows the geographic impact of D. Monroe's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Monroe with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Monroe more than expected).

Fields of papers citing papers by D. Monroe

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Monroe. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Monroe. The network helps show where D. Monroe may publish in the future.

Co-authorship network of co-authors of D. Monroe

This figure shows the co-authorship network connecting the top 25 collaborators of D. Monroe. A scholar is included among the top collaborators of D. Monroe based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Monroe. D. Monroe is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Theory of "current-ratio" method for oxide reliability: proposal and validation of a new class two-dimensional breakdown-spot characterization techniques 2006 ·Muhammad A. Alam, D. Monroe, B. E. Weir, P. J. Silvėrman	4
2	Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing 2003 ·G. D. Wilk, (unknown), M.-Y. Ho, B. Busch, T. Sorsch, F. Klemens, Bert Brijs, R. B. van Dover, A. Kornblit, T. Gustafsson, Eric Garfunkel, S.J. Hillenius, D. Monroe, (unknown), J. M. Hergenrother	19
3	An anode hole injection percolation model for oxide breakdown-the "doom's day" scenario revisited 2003 ·Md Ashraful Alam, (unknown), B. E. Weir, P. J. Silvėrman, A. Ghetti, D. Monroe, Kin P. Cheung, S. Moccio	12
4	Gate oxides in 50 nm devices: thickness uniformity improves projected reliability 2003 ·B. E. Weir, P. J. Silvėrman, Muhammad A. Alam, F.H. Baumann, D. Monroe, A. Ghetti, J. Bude, G. Timp, Abdullah Hamad, (unknown), Ni Zhao, Y. Ma, (unknown), D. Hwang, T. Sorsch, (unknown)	14
5	Passivation of interface-states in large-area Si devices using hydrogen implantation 2003 ·IEEE Electron Device Letters ·Avid Kamgar, D. Monroe, W Mansfield	4
6	Ultra-thin gate oxide reliability projections 2002 ·Solid-State Electronics ·B. E. Weir, Md Ashraful Alam, P. J. Silvėrman, F.H. Baumann, D. Monroe, J. Bude, G. Timp, Abdullah Hamad, Y. Ma, (unknown), D. Hwang, T. Sorsch, A. Ghetti, G. D. Wilk	10
7	The vertical replacement-gate (VRG) process for scalable general-purpose complementary logic 2002 ·D. Monroe, J. M. Hergenrother	5
8	40 Gb/s photonic integrated receiver with -17 dBm sensitivity 2002 ·B. Mason, J. Geary, J. M. Freund, A. Ougazzaden, C.W. Lentz, K.G. Glogovsky, (unknown), L. J. Peticolas, F.S. Walters, L.D. Reynolds, (unknown), (unknown), (unknown), D. Monroe, L.J.P. Ketelsen	9
9	Gate oxide reliability projection to the sub-2 nm regime 2000 ·Semiconductor Science and Technology ·B. E. Weir, Md Ashraful Alam, J. Bude, P. J. Silvėrman, A. Ghetti, F.H. Baumann, (unknown), D. Monroe, T. Sorsch, G. Timp, Y. Ma, (unknown), Abdullah Hamad, D. Hwang, Philip E. Mason	66
10	Stress induced leakage current analysis via quantum yield experiments 2000 ·IEEE Transactions on Electron Devices ·A. Ghetti, (unknown), J. Bude, D. Monroe, E. Sangiorgi, (unknown)	35
11	1/f Noise in the Tunneling Current of thin Gate Oxides 1996 ·MRS Proceedings ·G. B. Alers, D. Monroe, K.S. Krisch, B. E. Weir, A. M. Chang	7
12	Antidot superlattices in two-dimensional hole gases confined in strained germanium layers 1995 ·Semiconductor Science and Technology ·D. Többen, Markus Holzmann, G. Abstreiter, Armin Kriele, H. Lorenz, J. P. Kotthaus, F. Schäffler, Y. H. Xie, P. J. Silvėrman, D. Monroe	5
13	Electron-beam induced current determination of shallow junction depth 1994 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Eugene A. Fitzgerald, H.‐J. Gossmann, F. C. Unterwald, H. S. Luftman, D. Monroe	7
14	Decay of ultraviolet-induced fiber Bragg gratings 1994 ·Journal of Applied Physics ·T. Erdoğan, V. Mizrahi, P. J. Lemaire, D. Monroe	345
15	Hydrogen-induced-loss increases in erbium-doped amplifier fibers: revised predictions 1994 ·P. J. Lemaire, D. Monroe, Harry A. J. Watson	2
16	Electrical characterization of an ultrahigh concentration boron delta-doping layer 1994 ·Applied Physics Letters ·B. E. Weir, L. C. Feldman, D. Monroe, (unknown), Randall L. Headrick, T. R. Hart	31
17	Thickness Dependence of Electrical Transport in Buried CoSi₂ Films Fabricated by Ion Beam Synthesis 1993 ·MRS Proceedings ·Klaus Radermacher, (unknown), (unknown), D. Monroe, Alice E. White, K. T. Short	2
18	Molecular Beam Epitaxial Growth of Very High Mobility Two-Dimensional Electron Gases in Si/GeSi Heterostructures 1991 ·MRS Proceedings ·Y. H. Xie, Eugene A. Fitzgerald, Y. J. Mii, D. Monroe, (unknown), B. E. Weir, L. C. Feldman	7
19	Effect of a defect level on multiple trapping: Exact results 1986 ·Solid State Communications ·D. Monroe	7
20	DENSITY OF STATES IN THE GAP OF a-As₂Se₃BY PHOTOCURRENT TRANSIENT SPECTROSCOPY 1981 ·Le Journal de Physique Colloques ·D. Monroe, J. Orenstein, M. A. Kastner	12

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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