R.A. Reber

1.3k total citations · 1 hit paper
15 papers, 1.1k citations indexed

About

R.A. Reber is a scholar working on Electrical and Electronic Engineering, Control and Systems Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R.A. Reber has authored 15 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 1 paper in Control and Systems Engineering and 1 paper in Atomic and Molecular Physics, and Optics. Recurrent topics in R.A. Reber's work include Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). R.A. Reber is often cited by papers focused on Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). R.A. Reber collaborates with scholars based in United States. R.A. Reber's co-authors include Daniel M. Fleetwood, P.S. Winokur, M.R. Shaneyfelt, L.C. Riewe, J.R. Schwank, T.L. Meisenheimer, S.L. Kosier, Ronald D. Schrimpf, R.L. Pease and R.N. Nowlin and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Review of Scientific Instruments.

In The Last Decade

R.A. Reber

15 papers receiving 1.0k citations

Hit Papers

Effects of oxide traps, interface traps, and ‘‘border tra... 1993 2026 2004 2015 1993 100 200 300

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R.A. Reber United States 11 1.0k 152 86 41 35 15 1.1k
L.C. Riewe United States 16 1.4k 1.3× 160 1.1× 90 1.0× 35 0.9× 33 0.9× 24 1.4k
T. Kaga Japan 12 529 0.5× 118 0.8× 63 0.7× 38 0.9× 103 2.9× 29 601
K.S. Krisch United States 12 675 0.7× 171 1.1× 66 0.8× 46 1.1× 22 0.6× 23 694
K.P. MacWilliams United States 11 608 0.6× 100 0.7× 138 1.6× 42 1.0× 82 2.3× 36 658
A. Chou United States 11 657 0.6× 114 0.8× 80 0.9× 24 0.6× 71 2.0× 24 684
H.A.R. Wegener United States 12 407 0.4× 142 0.9× 132 1.5× 17 0.4× 23 0.7× 38 445
K. Rajkanan United States 9 418 0.4× 166 1.1× 180 2.1× 26 0.6× 46 1.3× 20 490
T.C. Holloway United States 13 523 0.5× 104 0.7× 190 2.2× 26 0.6× 61 1.7× 29 612
E. Harari United States 11 587 0.6× 213 1.4× 74 0.9× 34 0.8× 27 0.8× 17 628
L.D. Yau United States 13 711 0.7× 77 0.5× 145 1.7× 25 0.6× 59 1.7× 33 755

Countries citing papers authored by R.A. Reber

Since Specialization
Citations

This map shows the geographic impact of R.A. Reber's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.A. Reber with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.A. Reber more than expected).

Fields of papers citing papers by R.A. Reber

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.A. Reber. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.A. Reber. The network helps show where R.A. Reber may publish in the future.

Co-authorship network of co-authors of R.A. Reber

This figure shows the co-authorship network connecting the top 25 collaborators of R.A. Reber. A scholar is included among the top collaborators of R.A. Reber based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.A. Reber. R.A. Reber is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Winokur, P.S., et al.. (2002). Effects of reliability screens on MOS charge trapping. 199–206. 1 indexed citations
2.
Fleetwood, Daniel M., R.A. Reber, L.C. Riewe, & P.S. Winokur. (1999). Thermally stimulated current in SiO2. Microelectronics Reliability. 39(9). 1323–1336. 15 indexed citations
3.
Fleetwood, Daniel M., P.S. Winokur, L.C. Riewe, & R.A. Reber. (1998). Bulk oxide traps and border traps in metal–oxide–semiconductor capacitors. Journal of Applied Physics. 84(11). 6141–6148. 33 indexed citations
4.
Shaneyfelt, M.R., P.S. Winokur, Daniel M. Fleetwood, J.R. Schwank, & R.A. Reber. (1996). Effects of reliability screens on MOS charge trapping. IEEE Transactions on Nuclear Science. 43(3). 865–872. 34 indexed citations
5.
Shaneyfelt, M.R., W. L. Warren, Dale L. Hetherington, P.S. Winokur, & R.A. Reber. (1995). Radiation-induced defects in chemical-mechanical polished MOS oxides. IEEE Transactions on Nuclear Science. 42(6). 1725–1730. 3 indexed citations
6.
Fleetwood, Daniel M., S.L. Kosier, R.N. Nowlin, et al.. (1994). Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates. IEEE Transactions on Nuclear Science. 41(6). 1871–1883. 228 indexed citations
7.
Fleetwood, Daniel M., P.S. Winokur, R.A. Reber, et al.. (1993). Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices. Journal of Applied Physics. 73(10). 5058–5074. 393 indexed citations breakdown →
8.
Fleetwood, Daniel M., M.R. Shaneyfelt, L.C. Riewe, P.S. Winokur, & R.A. Reber. (1993). The role of border traps in MOS high-temperature postirradiation annealing response. IEEE Transactions on Nuclear Science. 40(6). 1323–1334. 70 indexed citations
9.
Miller, S. L., Daniel M. Fleetwood, P. J. McWhorter, R.A. Reber, & J. Murray. (1993). A general centroid determination methodology, with application to multilayer dielectric structures and thermally stimulated current measurements. Journal of Applied Physics. 74(8). 5068–5077. 5 indexed citations
10.
Reber, R.A. & Daniel M. Fleetwood. (1992). Thermally stimulated current measurements of SiO2 defect density and energy in irradiated metal-oxide-semiconductor capacitors. Review of Scientific Instruments. 63(12). 5714–5725. 38 indexed citations
11.
Fleetwood, Daniel M., R.A. Reber, & P.S. Winokur. (1992). Trapped-hole annealing and electron trapping in metal-oxide-semiconductor devices. Applied Physics Letters. 60(16). 2008–2010. 30 indexed citations
12.
Fleetwood, Daniel M., S. L. Miller, R.A. Reber, et al.. (1992). New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors). IEEE Transactions on Nuclear Science. 39(6). 2192–2203. 126 indexed citations
13.
Axness, Carl L., et al.. (1991). Radiation characteristics of SIPOS and polysilicon resistors. IEEE Transactions on Nuclear Science. 38(6). 1365–1369. 11 indexed citations
14.
Fleetwood, Daniel M., R.A. Reber, & P.S. Winokur. (1991). Effect of bias on thermally stimulated current (TSC) in irradiated MOS devices. IEEE Transactions on Nuclear Science. 38(6). 1066–1077. 71 indexed citations
15.
VanDevender, J. Pace & R.A. Reber. (1981). High voltage, magnetically switched pulsed power systems. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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