L. C. Feldman

24.0k total citations · 5 hit papers
400 papers, 18.7k citations indexed

About

L. C. Feldman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, L. C. Feldman has authored 400 papers receiving a total of 18.7k indexed citations (citations by other indexed papers that have themselves been cited), including 257 papers in Electrical and Electronic Engineering, 121 papers in Atomic and Molecular Physics, and Optics and 106 papers in Materials Chemistry. Recurrent topics in L. C. Feldman's work include Semiconductor materials and devices (156 papers), Silicon Carbide Semiconductor Technologies (88 papers) and Semiconductor materials and interfaces (56 papers). L. C. Feldman is often cited by papers focused on Semiconductor materials and devices (156 papers), Silicon Carbide Semiconductor Technologies (88 papers) and Semiconductor materials and interfaces (56 papers). L. C. Feldman collaborates with scholars based in United States, Germany and Canada. L. C. Feldman's co-authors include Richard F. Haglund, James W. Mayer, John R. Williams, René López, M. Zinke-Allmang, Sarit Dhar, P. J. Silvėrman, F. Adams, Sokrates T. Pantelides and Marcia H. Grabow and has published in prestigious journals such as Nature, Science and Proceedings of the National Academy of Sciences.

In The Last Decade

L. C. Feldman

392 papers receiving 17.9k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Materials analysis by ion channeling

1982 718 citations L. C. Feldman profile →
Fundamentals of surface and thin film analysis

1989 686 citations L. C. Feldman et al. profile →
Clustering on surfaces

1992 563 citations L. C. Feldman et al. profile →
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

2001 538 citations Gil Yong Chung, C. C. Tin et al. profile →
Observation of long-range exciton diffusion in highly ordered organic semiconductors

2010 458 citations L. C. Feldman, Vitaly Podzorov et al. profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
L. C. Feldman	11.3k	6.3k	5.5k	2.7k	2.1k	400	18.7k
L. Ley	11.9k 1.1×	17.6k 2.8×	6.8k 1.2×	2.2k 0.8×	3.5k 1.7×	362	24.1k
P. A. Dowben	8.8k 0.8×	11.6k 1.8×	4.6k 0.8×	4.5k 1.7×	2.0k 1.0×	660	18.5k
F. J. Himpsel	6.3k 0.6×	7.3k 1.2×	9.0k 1.6×	1.9k 0.7×	2.0k 1.0×	257	17.2k
E. Umbach	8.3k 0.7×	7.1k 1.1×	6.4k 1.2×	862 0.3×	2.9k 1.4×	302	14.8k
Ute Kaiser	10.5k 0.9×	15.8k 2.5×	2.5k 0.4×	3.7k 1.4×	3.8k 1.9×	547	25.5k
David J. Smith	8.3k 0.7×	12.3k 1.9×	8.3k 1.5×	5.0k 1.9×	3.6k 1.8×	1.3k	28.7k
G. Margaritondo	5.9k 0.5×	4.8k 0.8×	6.0k 1.1×	2.3k 0.9×	2.4k 1.1×	713	15.1k
Nigel D. Browning	9.3k 0.8×	14.3k 2.3×	2.3k 0.4×	4.3k 1.6×	2.3k 1.1×	569	25.0k
R.F. Egerton	5.0k 0.4×	7.0k 1.1×	2.7k 0.5×	1.6k 0.6×	2.1k 1.0×	207	15.1k
L. A. Boatner	6.3k 0.6×	17.5k 2.8×	3.2k 0.6×	5.4k 2.0×	2.1k 1.0×	633	23.2k

Countries citing papers authored by L. C. Feldman

Since Specialization

Citations

This map shows the geographic impact of L. C. Feldman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. C. Feldman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. C. Feldman more than expected).

Fields of papers citing papers by L. C. Feldman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. C. Feldman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. C. Feldman. The network helps show where L. C. Feldman may publish in the future.

Co-authorship network of co-authors of L. C. Feldman

This figure shows the co-authorship network connecting the top 25 collaborators of L. C. Feldman. A scholar is included among the top collaborators of L. C. Feldman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. C. Feldman. L. C. Feldman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

O’Hara, Andrew, Benjamin J. Lawrie, Yongqiang Wang, et al.. (2024). Phonon-mediated temperature dependence of Er3+ optical transitions in Er2O3. Communications Physics. 7(1). 2 indexed citations

Das, Suman, Hengfei Gu, A. C. Ahyi, et al.. (2023). Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing. Journal of Applied Physics. 133(21). 4 indexed citations

Schultz, Albert J., et al.. (2023). Progress in Secondary Electron Yield Mapping in Charged Particle Microscopy. Microscopy and Microanalysis. 29(Supplement_1). 741–742. 1 indexed citations

Bruevich, Vladimir V., Sylvie Rangan, Zhenyuan Zhang, et al.. (2022). Intrinsic (Trap‐Free) Transistors Based on Epitaxial Single‐Crystal Perovskites. Advanced Materials. 34(43). e2205055–e2205055. 26 indexed citations

Zhu, Kun, Zhongkai Cheng, Sylvie Rangan, et al.. (2021). A New Type of Hybrid Copper Iodide as Nontoxic and Ultrastable LED Emissive Layer Material. ACS Energy Letters. 6(7). 2565–2574. 67 indexed citations

Morisette, Dallas, A. C. Ahyi, Ryan Thorpe, et al.. (2021). Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors. Journal of Applied Physics. 129(7). 12 indexed citations

Yang, Jieun, Yan Wang, Maureen J. Lagos, et al.. (2019). Single Atomic Vacancy Catalysis. ACS Nano. 13(9). 9958–9964. 140 indexed citations

Manichev, Viacheslav, L. C. Feldman, T. Gustafsson, et al.. (2019). Normal-state and superconducting properties of Co-doped BaFe ₂ As ₂ and MgB ₂ thin films after focused helium ion beam irradiation. Superconductor Science and Technology. 32(9). 95009–95009. 11 indexed citations

Euw, Stanislas Von, Qihong Zhang, Viacheslav Manichev, et al.. (2017). Biological control of aragonite formation in stony corals. Science. 356(6341). 933–938. 153 indexed citations

10.

Feldman, L. C.. (2017). Police Violence and the Legal Temporalities of Immunity. Project Muse (Johns Hopkins University). 20(2). 329–350. 4 indexed citations

11.

Xu, Can, et al.. (2017). 4H-SiC surface energy tuning by nitrogen up-take. Applied Surface Science. 402. 192–197. 4 indexed citations

12.

Szeto, Hazel H., Shaoyi Liu, Yi Soong, et al.. (2016). Mitochondria Protection after Acute Ischemia Prevents Prolonged Upregulation of IL-1β and IL-18 and Arrests CKD. Journal of the American Society of Nephrology. 28(5). 1437–1449. 142 indexed citations

13.

Ahyi, A. C., et al.. (2016). Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence. Journal of Applied Physics. 119(15). 19 indexed citations

14.

Xu, Yi, Can Xu, Gang Liu, et al.. (2015). Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface. Journal of Applied Physics. 118(23). 8 indexed citations

15.

Hachey, David L., Munirathinam Sundaramoorthy, Surajit Banerjee, et al.. (2008). Kinetics of a Collagen-Like Polypeptide Fragmentation after Mid-IR Free-Electron Laser Ablation. Biophysical Journal. 95(3). 1371–1381. 10 indexed citations

16.

Bardeleben, H. J. von, J. L. Cantin, I. Vickridge, et al.. (2004). Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC. HAL (Le Centre pour la Communication Scientifique Directe). 5 indexed citations

17.

Chung, Gil Yong, John R. Williams, C. C. Tin, et al.. (2001). Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation. Applied Surface Science. 184(1-4). 399–403. 28 indexed citations

18.

Zuhr, R. A., J. D. Budai, Panos G. Datskos, et al.. (1998). Nanostructured Arrays Formed by Finely Focused Ion Beams. MRS Proceedings. 536. 1 indexed citations

19.

Fitzgerald, Eugene A., Ya Xie, M. L. Green, et al.. (1991). Strain-Free Ge_xSi_1−x Layers with Low Threading Dislocation Densities Grown on Si Substrates. MRS Proceedings. 220. 14 indexed citations

20.

Feldman, L. C., W. M. Augustyniak, & J. L. Merz. (1970). implantation of Bi into GaP. II. channeling studies. Radiation Effects. 6(2). 293–299. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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