L. C. Feldman

24.0k total citations · 5 hit papers
400 papers, 18.7k citations indexed

About

L. C. Feldman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, L. C. Feldman has authored 400 papers receiving a total of 18.7k indexed citations (citations by other indexed papers that have themselves been cited), including 257 papers in Electrical and Electronic Engineering, 121 papers in Atomic and Molecular Physics, and Optics and 106 papers in Materials Chemistry. Recurrent topics in L. C. Feldman's work include Semiconductor materials and devices (156 papers), Silicon Carbide Semiconductor Technologies (88 papers) and Semiconductor materials and interfaces (56 papers). L. C. Feldman is often cited by papers focused on Semiconductor materials and devices (156 papers), Silicon Carbide Semiconductor Technologies (88 papers) and Semiconductor materials and interfaces (56 papers). L. C. Feldman collaborates with scholars based in United States, Germany and Canada. L. C. Feldman's co-authors include Richard F. Haglund, James W. Mayer, John R. Williams, René López, M. Zinke-Allmang, Sarit Dhar, P. J. Silvėrman, F. Adams, Sokrates T. Pantelides and Marcia H. Grabow and has published in prestigious journals such as Nature, Science and Proceedings of the National Academy of Sciences.

In The Last Decade

L. C. Feldman

392 papers receiving 17.9k citations

Hit Papers

5 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Materials analysis by ion channeling

1982 718 citations L. C. Feldman profile →
Fundamentals of surface and thin film analysis

1989 686 citations L. C. Feldman et al. profile →
Clustering on surfaces

1992 563 citations L. C. Feldman et al. profile →
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

2001 538 citations John R. Williams, Sokrates T. Pantelides et al. profile →
Observation of long-range exciton diffusion in highly ordered organic semiconductors

2010 458 citations Hikmat Najafov, Qibin Zhou et al. Nature Materials profile →

Peers

Countries citing papers authored by L. C. Feldman

Since Specialization

Citations

This map shows the geographic impact of L. C. Feldman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. C. Feldman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. C. Feldman more than expected).

Fields of papers citing papers by L. C. Feldman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. C. Feldman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. C. Feldman. The network helps show where L. C. Feldman may publish in the future.

Co-authorship network of co-authors of L. C. Feldman

This figure shows the co-authorship network connecting the top 25 collaborators of L. C. Feldman. A scholar is included among the top collaborators of L. C. Feldman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. C. Feldman. L. C. Feldman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Dual interfacial H-bonding-enhanced deep-blue hybrid copper–iodide LEDs 2025 ·Nature ·Kun Zhu, Obadiah G. Reid, Sylvie Rangan, (unknown), Jingbai Li, (unknown), Kang Zhou, (unknown), (unknown), (unknown), Mingxing Li, (unknown), Kui Tan, Mircea Cotlet, Yi Liu, L. C. Feldman, Deirdre M. O’Carroll, Kai Zhu, Jing Li	4
2	Phonon-mediated temperature dependence of Er3+ optical transitions in Er2O3 2024 ·Communications Physics ·(unknown), (unknown), (unknown), (unknown), Andrew O’Hara, Benjamin J. Lawrie, Yongqiang Wang, (unknown), Halina Krzyżanowska, Michael Titze, James W. Davidson, Anthony B. Hmelo, Agham Posadas, Alexander A. Demkov, Sokrates T. Pantelides, L. C. Feldman, N. H. Tolk	2
3	Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing 2023 ·Journal of Applied Physics ·Suman Das, Hengfei Gu, (unknown), A. C. Ahyi, L. C. Feldman, Eric Garfunkel, Marcelo A. Kuroda, Sarit Dhar	4
4	Intrinsic (Trap‐Free) Transistors Based on Epitaxial Single‐Crystal Perovskites 2022 ·Advanced Materials ·Vladimir V. Bruevich, (unknown), Sylvie Rangan, (unknown), Zhenyuan Zhang, Thomas J. Emge, Eva Y. Andrei, R. A. Bartynski, L. C. Feldman, Vitaly Podzorov	26
5	A New Type of Hybrid Copper Iodide as Nontoxic and Ultrastable LED Emissive Layer Material 2021 ·ACS Energy Letters ·Kun Zhu, Zhongkai Cheng, Sylvie Rangan, Mircea Cotlet, (unknown), (unknown), Simon J. Teat, Wei Liu, Yifei Chen, L. C. Feldman, Deirdre M. O’Carroll, Jing Li	67
6	Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors 2021 ·Journal of Applied Physics ·(unknown), (unknown), Dallas Morisette, A. C. Ahyi, Ryan Thorpe, Marcelo A. Kuroda, L. C. Feldman, Sarit Dhar	12
7	Single Atomic Vacancy Catalysis 2019 ·ACS Nano ·Jieun Yang, Yan Wang, Maureen J. Lagos, Viacheslav Manichev, Raymond Fullon, Xiuju Song, Damien Voiry, Sudip Chakraborty, Wenjing Zhang, Philip E. Batson, L. C. Feldman, Torgny Gustafsson, Manish Chhowalla	140
8	Biological control of aragonite formation in stony corals 2017 ·Science ·Stanislas Von Euw, Qihong Zhang, Viacheslav Manichev, Nagarajan Murali, Juliane Groß, L. C. Feldman, Torgny Gustafsson, Carol R. Flach, Richard Mendelsohn, Paul G. Falkowski	153
9	Police Violence and the Legal Temporalities of Immunity 2017 ·Project Muse (Johns Hopkins University) ·L. C. Feldman	4
10	4H-SiC surface energy tuning by nitrogen up-take 2017 ·Applied Surface Science ·(unknown), (unknown), Can Xu, T. Gustafsson, F. C. Stedile, L. C. Feldman	4
11	Mitochondria Protection after Acute Ischemia Prevents Prolonged Upregulation of IL-1β and IL-18 and Arrests CKD 2016 ·Journal of the American Society of Nephrology ·Hazel H. Szeto, Shaoyi Liu, Yi Soong, Surya V. Seshan, Leona Cohen‐Gould, Viacheslav Manichev, L. C. Feldman, Torgny Gustafsson	142
12	Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence 2016 ·Journal of Applied Physics ·(unknown), A. C. Ahyi, Can Xu, Dallas Morisette, L. C. Feldman, Sarit Dhar	19
13	Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface 2015 ·Journal of Applied Physics ·Yi Xu, Can Xu, Gang Liu, (unknown), S. M. Shubeita, (unknown), (unknown), A. C. Ahyi, Yogesh Sharma, A. Wan, John R. Williams, (unknown), Sarit Dhar, Eric Garfunkel, L. C. Feldman	8
14	Photon‐Assisted Oxygen Diffusion and Oxygen‐Related Traps in Organic Semiconductors 2011 ·Advanced Materials ·(unknown), Daniel Mastrogiovanni, Eric Garfunkel, L. C. Feldman, Vitaly Podzorov	49
15	Observation of long-range exciton diffusion in highly ordered organic semiconductors breakdown → 2010 ·Nature Materials ·Hikmat Najafov, (unknown), Qibin Zhou, L. C. Feldman, Vitaly Podzorov	458
16	Vibrational Lifetimes and Frequency-Gap Law of Hydrogen Bending Modes in Semiconductors 2006 ·Physical Review Letters ·Baozhou Sun, Gang Shi, S. V. S. Nageswara Rao, Michael Stavola, N. H. Tolk, S. K. Dixit, L. C. Feldman, G. Lüpke	30
17	Modification of the oxide/semiconductor interface by high temperature NO treatments: A combined EPR, NRA and XPS study on oxidized porous and bulk n-type 4H-SiC 2004 ·HAL (Le Centre pour la Communication Scientifique Directe) ·H. J. von Bardeleben, J. L. Cantin, I. Vickridge, (unknown), Sarit Dhar, L. C. Feldman, (unknown), Linghong Ke, Y. Shishkin, Robert P. Devaty, W. J. Choyke	5
18	Vibrational Lifetimes and Isotope Effects of Interstitial Oxygen in Silicon and Germanium 2004 ·Physical Review Letters ·Baozhou Sun, (unknown), R. C. Newman, B. Pajot, N. H. Tolk, L. C. Feldman, G. Lüpke	15
19	Dynamic Scaling, Island Size Distribution, and Morphology in the Aggregation Regime of Submonolayer Pentacene Films 2003 ·Physical Review Letters ·Ricardo Ruiz, Bert Nickel, Norbert Koch, L. C. Feldman, Richard F. Haglund, Antoine Kahn, Fereydoon Family, G. Scoles	168
20	Lifetimes of Hydrogen and Deuterium Related Vibrational Modes in Silicon 2001 ·Physical Review Letters ·Michael Budde, G. Lüpke, (unknown), (unknown), N. H. Tolk, L. C. Feldman, Enver Tarhan, A. K. Ramdas, Michael Stavola	39

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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