C.H. Ling

790 citations

77 papers · 614 indexed · h-index 14

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 63
- Advancements in Semiconductor Devices and Circuit Design 48
- Integrated Circuits and Semiconductor Failure Analysis 25
- Ferroelectric and Negative Capacitance Devices 12
- Silicon and Solar Cell Technologies 8
- Thin-Film Transistor Technologies 7
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 16
Materials Chemistry
- Electronic and Structural Properties of Oxides 6
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Co-authors: D. S. Ang Y.T. Yeow J.C. Anderson Won Kook Choi K.L. Tan W. K. Choi Zhiyuan Cheng Hongqiang Liao
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Materials Chemistry
Journals: IEEE Transactions on Electron Devices (15 papers)IEEE Electron Device Letters (12 papers)Journal of Applied Physics (8 papers)
Partner nations: Singapore United Kingdom Australia

In The Last Decade

C.H. Ling

73 papers receiving 591 citations

Peers

Countries citing papers authored by C.H. Ling

Since Specialization

Citations

This map shows the geographic impact of C.H. Ling's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.H. Ling with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.H. Ling more than expected).

Fields of papers citing papers by C.H. Ling

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.H. Ling. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.H. Ling. The network helps show where C.H. Ling may publish in the future.

Co-authorship network

The 25 scholars most cited alongside C.H. Ling, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C.H. Ling Line = papers co-authored together C.H. Ling links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Investigation of synergistic activation effect of nanobubbles and fine-grained minerals on hydrate formation Fuel ·Dongyu Wu,Junxiang Liu,Jinsheng Sun,Ren Wang,(unknown),(unknown),Yanni Wang,C.H. Ling,Xinxin Zhang	2025	1
2	Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET IEEE Electron Device Letters ·D. S. Ang,André Uteng,C.H. Ling	2005	28
3	Nonlocal Hot-Electron Injection as the Mechanism for the Predominant Source-Side Gate Oxide Degradation in CHE-Stressed Deep Submicrometer n-MOSFETs IEEE Electron Device Letters ·D. S. Ang,Hongqiang Liao,C.H. Ling	2004	3
4	A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET IEEE Electron Device Letters ·D. S. Ang,C.H. Ling	2003	4
5	A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: device characterization and damage assessment IEEE Transactions on Electron Devices ·Hongqiang Liao,D. S. Ang,C.H. Ling	2002	7
6	Charge trapping in interpoly ONO film Claudia Saccoman,C.H. Ling	2002	2
7	Does short wavelength lithography process degrade the integrity of thin gate oxide? Microelectronics Reliability ·Yan Li-jian,B.J. Cho,F. Rougier,Eng Fong Chor,C. H. Ang,C.H. Ling,M. S. Joo,In‐Seok Yeo	2000	1
8	A comparison of hot-carrier degradation in tungsten polycide gate and poly gate p-MOSFETs IEEE Transactions on Electron Devices ·D. S. Ang,C.H. Ling	1998	1
9	Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFETs IEEE Transactions on Electron Devices ·C.H. Ling,Youngin Goh	1997	2
10	Fowler-Nordheim stress degradation in gate oxide: results from gate-to-drain capacitance and charge pumping current IEEE Transactions on Electron Devices ·C.H. Ling,Youngin Goh,Natalya Anatolyevna Kharlamova	1997	3
11	A study of hot carrier degradation in NMOSEET's by gate capacitance and charge pumping current IEEE Transactions on Electron Devices ·C.H. Ling,A. Charlier,D. S. Ang	1995	28
12	Measurement and simulation of hot carrier degradation in PMOSFET by gate capacitance IEEE Transactions on Electron Devices ·C.H. Ling,Betsy Seah,Ganesh S. Samudra,Cheng Gan	1995	7
13	Hot-electron degradation in NMOSFET's: results from temperature anneal IEEE Transactions on Electron Devices ·C.H. Ling,A Nikhil,Won Kook Choi,A. Charlier,D. S. Ang	1994	7
14	Measurement of the current transient in Ta2O5 films Thin Solid Films ·Kalpathy B. Sundaram,Won Kook Choi,C.H. Ling	1993	2
15	Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement IEEE Electron Device Letters ·Y.T. Yeow,C.H. Ling,A Nikhil	1991	41
16	Some Characteristics of the Zero-Temperature-Coefficient Capacitance of an MOS Capacitor in Accumulation Japanese Journal of Applied Physics ·C.H. Ling	1991	2
17	Electron and hole quasi-fermi levels in the vicinity of a grain boundary under uniform illumination: An approximate method of computation Solid-State Electronics ·C.H. Ling,一井孝久	1985	1
18	A diffusion model for carrier transport in a polycrystalline film Solid-State Electronics ·C.H. Ling	1984	4
19	Resisitivity change in Ti/Au bimetal films annealed in the temperature range 300 to 400 °C physica status solidi (a) ·C.H. Ling	1983	2
20	On the mechanism of the on-state multiple branching in thin chalcogenide films Thin Solid Films ·C.H. Ling	1975	0

About C.H. Ling

C.H. Ling is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Condensed Matter Physics and Electronic, Optical and Magnetic Materials, having authored 77 papers that have together received 614 indexed citations. Recurring topics across this work include Semiconductor materials and devices (63 papers), Advancements in Semiconductor Devices and Circuit Design (48 papers), Integrated Circuits and Semiconductor Failure Analysis (25 papers), Semiconductor materials and interfaces (16 papers), Ferroelectric and Negative Capacitance Devices (12 papers), Silicon and Solar Cell Technologies (8 papers), Thin-Film Transistor Technologies (7 papers) and Electronic and Structural Properties of Oxides (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (585 citations), Atomic and Molecular Physics, and Optics (95 citations), Materials Chemistry (124 citations), Condensed Matter Physics (23 citations) and Electronic, Optical and Magnetic Materials (32 citations). C.H. Ling has collaborated with scholars based in Singapore, United Kingdom and Australia. Frequent co-authors include D. S. Ang, Y.T. Yeow, J.C. Anderson, Won Kook Choi, K.L. Tan, W. K. Choi, Zhiyuan Cheng, Hongqiang Liao, F. C. Loh and W. K. Choi. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Journal of Applied Physics, Thin Solid Films and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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