M. Kunze

975 citations

23 papers · 780 indexed · h-index 13

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 17
- GaN-based semiconductor devices and materials 17
Atomic and Molecular Physics, and Optics 10
- Semiconductor Quantum Structures and Devices 10

Co-authors: E. Kohn I. Daumiller A. Krost A. Dadgar Martin Neuburger A. Diez J. Bläsing Tom Zimmermann
Journals: Journal of Crystal Growth (3 papers)IEEE Electron Device Letters (3 papers)Electronics Letters (2 papers)Semiconductor Science and Technology (1 paper)Diamond and Related Materials (1 paper)
Partner nations: Germany United States

In The Last Decade

M. Kunze

23 papers receiving 751 citations

Peers

Countries citing papers authored by M. Kunze

Since Specialization

Citations

This map shows the geographic impact of M. Kunze's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Kunze with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Kunze more than expected).

Fields of papers citing papers by M. Kunze

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Kunze. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Kunze. The network helps show where M. Kunze may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Kunze, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Kunze Line = papers co-authored together M. Kunze links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	GaN Power Semiconductors for PV Inverter Applications ¿ Opportunities and Risks N Joshi, Regine Mallwitz, Roland Rupp, 浩丸川, W. Bergner, 唐雄民, M. Kunze	2014	14
2	Anisotropic bow and plastic deformation of GaN on silicon Journal of Crystal Growth ·A. Dadgar, S. Fritze, O. Schulz, Kon-Naah Moomin Amos, J. Bläsing, H. De Witte, A. Diez, V. Sunnydayal, M. Kunze, I. Daumiller, K. Haberland, A. Krost	2012	8
3	Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si(001) substrates Journal of Crystal Growth ·F. Schulze, Seiji Ishiguro, A. Dadgar, A. Krtschil, J. Bläsing, M. Kunze, I. Daumiller, Thomas Hempel, A. Diez, R. Clos, J. Christen, A. Krost	2006	10
4	Piezoelectric GaN sensor structures IEEE Electron Device Letters ·Tom Zimmermann, Martin Neuburger, Adelina Amorim, Ol'ga M. Kudrina, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, E. Kohn	2006	96
5	Unstrained InAlN/GaN HEMT structure Martin Neuburger, Tom Zimmermann, E. Kohn, A. Dadgar, F. Schulze, A. Krtschil, Michael Günther, H. W. White, J. Bläsing, A. Krost, I. Daumiller, M. Kunze	2005	7
6	GaN based piezo sensors Martin Neuburger, Tom Zimmermann, Adelina Amorim, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, E. Kohn	2004	5
7	UNSTRAINED InAlN/GaN HEMT STRUCTURE International Journal of High Speed Electronics and Systems ·Martin Neuburger, Tom Zimmermann, E. Kohn, A. Dadgar, F. Schulze, A. Krtschil, Junxian Mao, H. De Witte, 鄭讚植, A. Krost, I. Daumiller, M. Kunze	2004	35
8	P-channel InGaN-HFET structure based on polarization doping Tom Zimmermann, Martin Neuburger, M. Kunze, I. Daumiller, Andrej Denisenko, A. Dadgar, A. Krost, E. Kohn	2004	4
9	Analysis of Surface Charging Effects in Passivated AlGaN–GaN FETs Using a MOS Test Electrode IEEE Electron Device Letters ·Martin Neuburger, Shin-Chi, Tom Zimmermann, I. Daumiller, M. Kunze, R. Birkhahn, D. Gotthold, E. Kohn	2004	11
10	P-Channel InGaN-HFET Structure Based on Polarization Doping IEEE Electron Device Letters ·Tom Zimmermann, Martin Neuburger, M. Kunze, I. Daumiller, Andrej Denisenko, A. Dadgar, A. Krost, E. Kohn	2004	55
11	Diamond diodes and transistors Semiconductor Science and Technology ·A. Aleksov, A. Denisenko, M. Kunze, Andrei Vescan, A. Bergmaier, G. Dollinger, Wolfgang Ebert, E. Kohn	2003	50
12	Transient characteristics of gan-based heterostructure field-effect transistors IEEE Transactions on Microwave Theory and Techniques ·E. Kohn, I. Daumiller, M. Kunze, Martin Neuburger, Thomas P. Fuller, T. Jenkins, J. Sewell, S.H. Shin, Y. Smorchkova, Umesh K. Mishra	2003	57
13	Surface stability of InGaN-channel based HFETs Electronics Letters ·Martin Neuburger, I. Daumiller, Tom Zimmermann, M. Kunze, Goutam Koley, Michael G. Spencer, A. Dadgar, A. Krtschil, A. Krost, E. Kohn	2003	12
14	Influence of polarization on the properties of GaN based FET structures Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Martin Neuburger, I. Daumiller, M. Kunze, Thomas P. Fuller, T. Jenkins, 桂世子山下, E. Kohn	2003	5
15	The Role of Charge Dipoles in GaN HFET Design Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Martin Neuburger, I. Daumiller, M. Kunze, Tom Zimmermann, B. Jogai, 桂世子山下, J. Sewell, T. Jenkins, A. Dadgar, A. Krost, E. Kohn	2002	5
16	Switching behaviour of GaN-based HFETs: thermal and electronic transients Electronics Letters ·E. Kohn, I. Daumiller, M. Kunze, 桂世子山下, J. Sewell, T. Jenkins	2002	15
17	MOVPE growth of GaN on Si(111) substrates Journal of Crystal Growth ·A. Dadgar, M. Poschenrieder, J. Bläsing, O. Contreras, F. Bertram, T. Riemann, A. Reiher, M. Kunze, I. Daumiller, A. Krtschil, A. Diez, MN Gurcan, Yan-ling Nie, M. Kamp, J. Christen, F. A. Ponce, E. Kohn, A. Krost	2002	119
18	First demonstration of low temperature grown InP-channel HFET transferred onto GaAs substrate Solid-State Electronics ·M. Kunze, 芳一木村, Сарычева М. А., E. Kohn	1999	1
19	Diamond junction FETs based on δ-doped channels Diamond and Related Materials ·A. Aleksov, Andrei Vescan, M. Kunze, P. Gluche, Wolfgang Ebert, E. Kohn, Anna Chesner, G. Dollinger	1999	69
20	LEAP 96 : proceedings of the Fourth Biennial Conference on Low Energy Antiproton Physics, Dinkelsbühl, Germany, 27-31 August 1996 North-Holland eBooks ·Seok Won Jeong, M. Kunze, Κ. Peters	1997	1

About M. Kunze

M. Kunze is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Mechanics of Materials and Biomedical Engineering, having authored 23 papers that have together received 780 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (17 papers), Semiconductor Quantum Structures and Devices (10 papers), Semiconductor materials and devices (8 papers), Metal and Thin Film Mechanics (7 papers), Silicon Carbide Semiconductor Technologies (5 papers), Acoustic Wave Resonator Technologies (4 papers), Diamond and Carbon-based Materials Research (3 papers) and Ga2O3 and related materials (2 papers). The work is most often cited by research in Condensed Matter Physics (572 citations), Electronic, Optical and Magnetic Materials (226 citations), Mechanics of Materials (199 citations), Electrical and Electronic Engineering (404 citations) and Materials Chemistry (303 citations). M. Kunze has collaborated with scholars based in Germany and United States. Frequent co-authors include E. Kohn, I. Daumiller, A. Krost, A. Dadgar, Martin Neuburger, A. Diez, J. Bläsing, Tom Zimmermann, Andrei Vescan and F. Schulze. Their work appears in journals such as Journal of Crystal Growth, IEEE Electron Device Letters, Electronics Letters, Semiconductor Science and Technology and Diamond and Related Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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