R. Vetury

3.0k citations

39 papers · 2.5k indexed · 1 hit paper · h-index 17

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 35
- GaN-based semiconductor devices and materials 35
Electronic, Optical and Magnetic Materials 9
- Ga2O3 and related materials 9

Co-authors: Umesh K. Mishra S. Keller I. P. Smorchkova Steven P. DenBaars J.B. Shealy C. R. Elsass P. Fini B. Heying
Journals: Applied Physics Letters (2 papers)Electronics Letters (2 papers)Journal of Applied Physics (2 papers)IEEE Transactions on Electron Devices (2 papers)Journal of Crystal Growth (1 paper)
Partner nations: United States France Germany

In The Last Decade

R. Vetury

38 papers receiving 2.4k citations

Hit Papers

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The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs 2001 · 1.2k citations

Peers

Countries citing papers authored by R. Vetury

Since Specialization

Citations

This map shows the geographic impact of R. Vetury's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Vetury with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Vetury more than expected).

Fields of papers citing papers by R. Vetury

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Vetury. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Vetury. The network helps show where R. Vetury may publish in the future.

Co-authors

The 25 scholars most cited alongside R. Vetury, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R. Vetury Line = papers co-authored together R. Vetury links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Periodically poled aluminum scandium nitride bulk acoustic wave resonators and filters for communications in the 6G era Microsystems & Nanoengineering ·Izhar Izhar, Merrilyn Mercy Adzo Fiagbenu, L. Woltjer, Jin-long Dong, Pariasadat Musavigharavi, Yong Deng, Hui Xin Chan, Craig Moe, Abhay Kochhar, Eric A. Stach, R. Vetury, Roy H. Olsson	2025	13
2	452 MHz Bandwidth, High Rejection 5.6 GHz UNII XBAW Coexistence Filters Using Doped AlN-on-Silicon Yuhua Shen, Amalia Ridhawati, R. Vetury, J.B. Shealy	2019	33
3	Single crystal aluminum nitride film bulk acoustic resonators Ameer Elemy, J.B. Shealy, Amalia Ridhawati, Bella R. Grossman, R. Vetury, H. Mayer-Kaupp	2016	9
4	Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters IEEE Transactions on Electron Devices ·Eric R. Heller, R. Vetury, Klenikova Va	2011	16
5	100 W GaN HEMT power amplifier module with > 60% efficiency over 100–1000 MHz bandwidth 2010 IEEE MTT-S International Microwave Symposium ·K. Krishnamurthy, Febriana Wrdiastuti, R. Vetury, Jan M. L. Martin	2010	24
6	Status of GaN HEMT performance and reliability Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Daniel S. Green, Ermolaev Stepanovich, R. Vetury, M Scaglia, Shawn R. Gibb, K. Krishnamurthy, Agung Teguh setyadi, Jan M. L. Martin, J.B. Shealy	2008	5
7	GaN HEMT thermal behavior and implications for reliability testing and analysis Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Daniel S. Green, Manuel González-Hidalgo, RM Lorenzana, Shawn R. Gibb, Emmanuel J. Chikwelu, R. Vetury, J.B. Shealy, Thomas E. Beechem, Samuel Graham	2008	25
8	Voltage Dependent Characteristics of 48V AlGaN/GaN High Electron Mobility Transistor Technology on Silicon Carbide Ermolaev Stepanovich, M Scaglia, Prabodh Shukla, Jan M. L. Martin, R. Vetury, Agung Teguh setyadi, J.B. Shealy	2007	7
9	AlGaN/GaN 120W WCDMA Doherty Amplifier with Digital Pre-Distortion Correction Agung Teguh setyadi, Medini Srinivas, Khang Truong, J.B. Shealy, R. Vetury, Ermolaev Stepanovich, Shoya Hirao, Shawn R. Gibb, Chaowei Xiao	2006	4
10	GaN Wide Band Power Integrated Circuits 周训清, Christoph Nössing, Agung Teguh setyadi, J.B. Shealy, R. Vetury, Shoya Hirao, Ermolaev Stepanovich, Shawn R. Gibb	2006	7
11	Performance and RF Reliability of GaN-on-SiC HEMT's using Dual-Gate Architectures R. Vetury, J.B. Shealy, Tyler Thorn, J. Warr, Ermolaev Stepanovich, Shawn R. Gibb, Насирдинов М. А., Khang Truong, Agung Teguh setyadi	2006	11
12	High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications IEEE MTT-S International Microwave Symposium Digest, 2005. ·R. Vetury, J.E. Buster, Felipe Nicolau Manterola, Shawn R. Gibb, Laura Tonetto, Насирдинов М. А., Khang Truong, Agung Teguh setyadi, J.B. Shealy	2005	30
13	Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability Journal of Crystal Growth ·张茉楠, Shawn R. Gibb, Ming-tao XIANG, R. Vetury, D.E. Grider, J. Smart	2004	36
14	High sensitivity and wide-dynamic-range optical receiver for 40 Gbit/s optical communication networks Electronics Letters ·R. Vetury, I. Gontijo, Guy Guerlement, K. Krishnamurthy, R. Pullela, M.J.W. Rodwell	2003	10
15	40 Gbit/s optical receiver module with high conversion gain and sensitivity Electronics Letters ·K. Krishnamurthy, R. Vetury, Guy Guerlement, M.J.W. Rodwell, R. Pullela	2003	2
16	Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors R. Vetury, Yifeng Wu, P. Fini, Giacinta Parish, S. Keller, Steven P. DenBaars, Umesh K. Mishra	2002	19
17	Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors Applied Physics Letters ·S. Keller, R. Vetury, Giacinta Parish, Steven P. DenBaars, Umesh K. Mishra	2001	18
18	The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs IEEE Transactions on Electron Devices ·R. Vetury, V Mezzano, S. Keller, Umesh K. Mishra Hit paper breakdown →	2001	1180
19	Current instabilities in GaN-based devices IEEE Electron Device Letters ·I. Daumiller, D. Théron, Christophe Gaquière, Andrei Vescan, 宏司原田, A. Wieszt, H. Leier, R. Vetury, Umesh K. Mishra, I. P. Smorchkova, S. Keller, C. Nguyen, E. Kohn	2001	127
20	Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy Journal of Applied Physics ·I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	1999	364

About R. Vetury

R. Vetury is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 39 papers that have together received 2.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (35 papers), Radio Frequency Integrated Circuit Design (14 papers), Ga2O3 and related materials (9 papers), Silicon Carbide Semiconductor Technologies (9 papers), Advanced Power Amplifier Design (8 papers), Semiconductor materials and devices (8 papers), Semiconductor Quantum Structures and Devices (7 papers) and ZnO doping and properties (7 papers). The work is most often cited by research in Condensed Matter Physics (2.3k citations), Electronic, Optical and Magnetic Materials (968 citations), Electrical and Electronic Engineering (1.7k citations), Atomic and Molecular Physics, and Optics (656 citations) and Materials Chemistry (659 citations). R. Vetury has collaborated with scholars based in United States, France and Germany. Frequent co-authors include Umesh K. Mishra, S. Keller, I. P. Smorchkova, Steven P. DenBaars, J.B. Shealy, C. R. Elsass, P. Fini, B. Heying, J. P. Ibbetson and E. Haus. Their work appears in journals such as Applied Physics Letters, Electronics Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices and Journal of Crystal Growth.

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