Andrei Vescan

4.2k citations

211 papers · 3.4k indexed · h-index 30

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials 126
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials 62
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 73
- Silicon Carbide Semiconductor Technologies 26
Materials Chemistry top 5%
- 2D Materials and Applications 34
- ZnO doping and properties 30
- Diamond and Carbon-based Materials Research 25
Mechanics of Materials top 2%
- Metal and Thin Film Mechanics 29

Co-authors: H. Kalisch M. Heuken E. Kohn Wolfgang Ebert H. Hahn P. Gluche B. Reuters N. Ketteniss
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Semiconductor Science and Technology (15 papers)Journal of Crystal Growth (13 papers)IEEE Electron Device Letters (10 papers)
Partner nations: Germany United States Belarus

In The Last Decade

Andrei Vescan

201 papers receiving 3.2k citations

Peers

Countries citing papers authored by Andrei Vescan

Since Specialization

Citations

This map shows the geographic impact of Andrei Vescan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Andrei Vescan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Andrei Vescan more than expected).

Fields of papers citing papers by Andrei Vescan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Andrei Vescan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Andrei Vescan. The network helps show where Andrei Vescan may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Andrei Vescan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Andrei Vescan Line = papers co-authored together Andrei Vescan links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Contact Resistance Optimization in MoS₂ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications ACS Applied Materials & Interfaces ·Tommy Hedlund,Christos Sachanidis,Bart Macco,H. Kalisch,M. Heuken,Andrei Vescan,Zhenxing Wang,Max C. Lemme	2025	5
2	Band structure alignment in transfer-free MOCVD grown 2D-TMDC heterostructures revealed by ambient KPFM APL Materials ·李冬艳,家城隆次,Julian Klein,賢治城間,H. Cercellier,Annika Grundmann,M. Heuken,H. Kalisch,Andrei Vescan,T. Kümmell,W. Mertin,G. Bacher	2025	0
3	Photogating through Unidirectional Charge Carrier Funneling in Two-Dimensional Transition Metal Dichalcogenide/Perovskite Heterostructure Photodetectors ACS Applied Optical Materials ·M. Pashaee,桂连友,Annika Grundmann,H. Cercellier,Martin A. Schroer,Markus Winterer,H. Kalisch,M. Heuken,Andrei Vescan,G. Bacher,Franziska Muckel	2024	3
4	Self-Powered Photodetectors Based on Scalable MOCVD-Grown WS₂–MoS₂ Heterostructures ACS Photonics ·家城隆次,憲三合,د. أحمد يازجي,桂连友,李冬艳,Annika Grundmann,邹亚文,M. Heuken,H. Kalisch,Andrei Vescan,W. Mertin,T. Kümmell,G. Bacher	2024	7
5	Button shear testing for adhesion measurements of 2D materials Nature Communications ·N Thamizharasi,S. K. Artyushin,Rawan Mohammed Abdullah Mahyoub,W. Greil,Caroline Diard,Jae-myung Kim,王艳霞,映雄荒木,Hui Chen,Christos Sachanidis,Annika Grundmann,H. Kalisch,M. Heuken,Andrei Vescan,Stephan Pindl,Max C. Lemme	2024	8
6	Impact of synthesis temperature and precursor ratio on the crystal quality of MOCVD WSe₂ monolayers Nanotechnology ·Annika Grundmann,家城隆次,邹亚文,Zigler Ss,Beata Kardynał,Jordan Chick,Jochen M. Schneider,T. Kümmell,G. Bacher,M. Heuken,H. Kalisch,Andrei Vescan	2023	8
7	Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2 SHILAP Revista de lepidopterología ·邹亚文,Annika Grundmann,L. F. C. Duarte,Atonement Lutheran Church,Zhaodong Wang,M.Sc. Ilena Moreira,Susanne Hoffmann‐Eifert,M. Heuken,H. Kalisch,Andrei Vescan	2023	2
8	Migration-Enhanced Metal–Organic Chemical Vapor Deposition of Wafer-Scale Fully Coalesced WS₂ and WSe₂ Monolayers Crystal Growth & Design ·L. F. C. Duarte,Annika Grundmann,Atonement Lutheran Church,Zhaodong Wang,Susanne Hoffmann‐Eifert,邹亚文,П.А. Вишнякова,M. Heuken,Andrei Vescan,H. Kalisch	2023	9
9	The MoS₂-Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS₂ Band Structure The Journal of Physical Chemistry C ·B. Wigersma,Annika Grundmann,Zhaodong Wang,Susanne Hoffmann‐Eifert,H. Kalisch,Andrei Vescan,M. Heuken,Rainer Waser,Silvia Karthäuser	2023	2
10	Silver nanowire electrodes for transparent light emitting devices based on WS₂ monolayers Nanotechnology ·憲三合,Rena D. Salyer,Irene A. Goldthorpe,Anselmo Abdo Rodríguez,Kevin P. Musselman,Annika Grundmann,H. Kalisch,Andrei Vescan,M. Heuken,T. Kümmell,G. Bacher	2023	7
11	Suspended Two-Dimensional Material Membranes For Sensor Applications Fabricated With A High-Yield Transfer Process Caroline Diard,J-M. Blaquiere,Maximilian Prechtl,Oliver Hartwig,Annika Grundmann,H. Kalisch,Satender Kataria,M. Heuken,Andrei Vescan,Georg S. Duesberg,Max C. Lemme	2023	2
12	Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition Scientific Reports ·B. Wigersma,Silvia Karthäuser,Annika Grundmann,Zhaodong Wang,M.Sc. Ilena Moreira,H. Kalisch,Andrei Vescan,M. Heuken,Rainer Waser,Susanne Hoffmann‐Eifert	2022	13
13	Role of Surface Adsorbates on the Photoresponse of (MO)CVD-Grown Graphene–MoS₂ Heterostructure Photodetectors ACS Applied Materials & Interfaces ·家城隆次,Annika Grundmann,Intan Nur Azzahra,李冬艳,C. McAleese,Xiaochen Wang,Ben R. Conran,Sergej Pasko,Simonas Krotkus,M. Heuken,H. Kalisch,Andrei Vescan,W. Mertin,T. Kümmell,G. Bacher	2022	10
14	Transfer-free, scalable photodetectors based on MOCVD-grown 2D-heterostructures 2D Materials ·Ulrich Unterhinninghofen,Intan Nur Azzahra,Annika Grundmann,H. Cercellier,李冬艳,家城隆次,M. Heuken,W. Mertin,H. Kalisch,Andrei Vescan,G. Bacher,T. Kümmell	2021	12
15	Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks Semiconductor Science and Technology ·Meng Xiaozh,H. Hahn,Marshall Nadine,Canon Lau,Liu Qian,Vladimír Junek,聡白木,Renato Negra,H. Kalisch,Andrei Vescan,M. Heuken	2021	8
16	Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes Semiconductor Science and Technology ·П.А. Вишнякова,R.L. Zhang,Helen N. Boyle,M. Heuken,H. Kalisch,Andrei Vescan	2021	1
17	Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS₂ ACS Photonics ·Daniel Schneider,Annika Grundmann,Andreas Bablich,Vikram Passi,Satender Kataria,H. Kalisch,M. Heuken,Andrei Vescan,Daniel Neumaier,Max C. Lemme	2020	74
18	Flexible Large‐Area Light‐Emitting Devices Based on WS₂ Monolayers Advanced Optical Materials ·弘文櫻田,Deborah I. Adesanya,家城隆次,Annika Grundmann,M. Heuken,H. Kalisch,Andrei Vescan,T. Kümmell,G. Bacher	2020	42
19	Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures AIP Advances ·Shaobin Li,Elke Meißner,Vladimír Junek,Giorgos Kostopoulos,Dirk Fahle,H. Behmenburg,H. Kalisch,Andrei Vescan,Jochen Friedrich,Tobias Erlbacher	2020	19
20	H2S-free Metal-Organic Vapor Phase Epitaxy of Coalesced 2D WS2 Layers on Sapphire MRS Advances ·Annika Grundmann,弘文櫻田,T. Kümmell,G. Bacher,M. Heuken,H. Kalisch,Andrei Vescan	2019	11

About Andrei Vescan

Andrei Vescan is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 211 papers that have together received 3.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (126 papers), Semiconductor materials and devices (73 papers), Ga2O3 and related materials (62 papers), 2D Materials and Applications (34 papers), ZnO doping and properties (30 papers), Metal and Thin Film Mechanics (29 papers), Silicon Carbide Semiconductor Technologies (26 papers) and Diamond and Carbon-based Materials Research (25 papers). The work is most often cited by research in Condensed Matter Physics (2.0k citations), Electronic, Optical and Magnetic Materials (1.0k citations) and Electrical and Electronic Engineering (2.2k citations). Andrei Vescan has collaborated with scholars based in Germany, United States and Belarus. Frequent co-authors include H. Kalisch, M. Heuken, E. Kohn, Wolfgang Ebert, H. Hahn, P. Gluche, B. Reuters, N. Ketteniss, E. L. Piner and Sameer Singhal. Their work appears in journals such as Semiconductor Science and Technology, Journal of Crystal Growth, IEEE Electron Device Letters, Diamond and Related Materials and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact