B. Jogai

4.0k total citations
85 papers, 3.4k citations indexed

About

B. Jogai is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, B. Jogai has authored 85 papers receiving a total of 3.4k indexed citations (citations by other indexed papers that have themselves been cited), including 68 papers in Atomic and Molecular Physics, and Optics, 43 papers in Electrical and Electronic Engineering and 31 papers in Materials Chemistry. Recurrent topics in B. Jogai's work include Semiconductor Quantum Structures and Devices (62 papers), Quantum and electron transport phenomena (34 papers) and GaN-based semiconductor devices and materials (28 papers). B. Jogai is often cited by papers focused on Semiconductor Quantum Structures and Devices (62 papers), Quantum and electron transport phenomena (34 papers) and GaN-based semiconductor devices and materials (28 papers). B. Jogai collaborates with scholars based in United States, Singapore and South Korea. B. Jogai's co-authors include D. C. Reynolds, D. C. Look, D. C. Look, W.C. Harsch, G. Cantwell, C. W. Litton, T. C. Collins, H. Morkoç̌, P. W. Yu and R. E. Sherriff and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

B. Jogai

82 papers receiving 3.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Jogai United States 22 2.5k 1.8k 1.5k 835 826 85 3.4k
C. W. Litton United States 26 3.9k 1.5× 2.7k 1.5× 2.0k 1.3× 1.0k 1.2× 594 0.7× 94 4.8k
J. R. Sizelove United States 21 2.9k 1.2× 2.5k 1.4× 1.7k 1.1× 993 1.2× 1.2k 1.4× 49 4.2k
S. J. Chua Singapore 33 2.1k 0.8× 2.0k 1.2× 1.3k 0.9× 1.1k 1.3× 1.8k 2.2× 197 3.8k
A. V. Rodina Russia 30 3.9k 1.6× 2.8k 1.6× 1.3k 0.9× 1.4k 1.6× 405 0.5× 85 4.6k
L. K. Teles Brazil 28 2.1k 0.8× 1.1k 0.6× 870 0.6× 856 1.0× 1.2k 1.4× 98 3.0k
P. Bogusławski Poland 24 1.6k 0.6× 994 0.6× 1.1k 0.8× 965 1.2× 1.3k 1.5× 76 2.7k
Hiroshi Harima Japan 24 1.6k 0.6× 1.3k 0.7× 993 0.7× 877 1.1× 1.6k 1.9× 125 3.1k
E. Łusakowska Poland 24 1.8k 0.7× 1.1k 0.6× 471 0.3× 870 1.0× 467 0.6× 125 2.3k
Akihiro Wakahara Japan 27 2.0k 0.8× 2.0k 1.1× 839 0.6× 1.2k 1.4× 1.3k 1.6× 211 3.4k
Ding‐Fu Shao China 32 2.5k 1.0× 1.0k 0.6× 1.3k 0.9× 1.3k 1.6× 900 1.1× 97 3.7k

Countries citing papers authored by B. Jogai

Since Specialization
Citations

This map shows the geographic impact of B. Jogai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Jogai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Jogai more than expected).

Fields of papers citing papers by B. Jogai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Jogai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Jogai. The network helps show where B. Jogai may publish in the future.

Co-authorship network of co-authors of B. Jogai

This figure shows the co-authorship network connecting the top 25 collaborators of B. Jogai. A scholar is included among the top collaborators of B. Jogai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Jogai. B. Jogai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jogai, B.. (2004). Complex dielectric function of AlGaN/GaN/InGaN heterojunction structures. physica status solidi (b). 241(4). 952–961. 3 indexed citations
2.
Jogai, B.. (2002). Free electron distribution in AlGaN/GaN heterojunction field-effect transistors. Journal of Applied Physics. 91(6). 3721–3729. 64 indexed citations
3.
Reynolds, D. C., et al.. (2000). Identification of the Γ5 and Γ6 free excitons in GaN. Applied Physics Letters. 77(18). 2879–2881. 38 indexed citations
4.
Jogai, B.. (2000). Absorption coefficient of wurtzite GaN calculated from an empirical tight binding model. Solid State Communications. 116(3). 153–157. 8 indexed citations
5.
Reynolds, D. C., D. C. Look, B. Jogai, et al.. (1999). Strain splitting of the Γ5 and Γ6 free excitons in ZnO. Journal of Applied Physics. 86(10). 5598–5600. 15 indexed citations
6.
Ng, Geok Ing, et al.. (1997). Identification of room temperature photoluminescence in pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs quantum wells. Journal of Applied Physics. 82(3). 1345–1349. 6 indexed citations
7.
Reynolds, D. C., et al.. (1996). Magnetophotoluminescence study of excited states associated with donor bound excitons in high-purity GaAs. Physical review. B, Condensed matter. 53(4). 1891–1895. 1 indexed citations
8.
Reynolds, D. C., D. C. Look, B. Jogai, & C. E. Stutz. (1994). Observation of free and bound excitons associated with the two-dimensional electron gas in modulation-doped heterostructures. Physical review. B, Condensed matter. 49(16). 11456–11458. 2 indexed citations
9.
Reynolds, D. C., B. Jogai, P. W. Yu, K. R. Evans, & C. E. Stutz. (1994). Resonant coupling of orbital angular momentum components in the barrier with analogous components in the well in InxGa1−xAs-GaAs quantum wells. Applied Physics Letters. 64(5). 604–606. 4 indexed citations
10.
Reynolds, D. C., D. C. Look, B. Jogai, et al.. (1994). Radiative recombination at theAlxGa1−xAs-GaAs heterostructure interface by two-dimensional excitons. Physical review. B, Condensed matter. 50(11). 7461–7466. 9 indexed citations
11.
Yu, P. W., B. Jogai, T. J. Rogers, Paul Martin, & J. M. Ballingall. (1994). Temperature dependence of photoluminescence linewidth in modulation-doped pseudomorphic high electron mobility transistor AlxGa1−xAs/InyGa1−yAs/GaAs structures. Applied Physics Letters. 65(25). 3263–3265. 15 indexed citations
12.
Stutz, C. E., B. Jogai, D. C. Look, J. M. Ballingall, & T. J. Rogers. (1994). Electrochemical capacitance-voltage analysis of delta-doped pseudomorphic high electron mobility transistor material. Applied Physics Letters. 64(20). 2703–2705. 9 indexed citations
13.
Jogai, B.. (1994). Self-consistent k⋅p band structure calculation for AlGaAs/InGaAs pseudomorphic high electron mobility transistors. Journal of Applied Physics. 76(4). 2316–2323. 13 indexed citations
14.
Jogai, B.. (1992). Extrinsic tristability as the cause of bistability in resonant-tunneling diodes. Superlattices and Microstructures. 11(4). 383–385. 2 indexed citations
15.
Reynolds, D. C., K. R. Evans, B. Jogai, C. E. Stutz, & P. W. Yu. (1992). Fine-structure features due to wave-function localization in coupled GaAs-AlxGa1−xAs quantum wells. Physical review. B, Condensed matter. 46(8). 4748–4751.
16.
Jogai, B., et al.. (1991). A parametric study of extrinsic bistability in the current-voltage curves of resonant-tunneling diodes. Journal of Applied Physics. 69(5). 3381–3383. 11 indexed citations
17.
Jogai, B.. (1991). Valence-band offset in strained GaAs-InxGa1−xAs superlattices. Applied Physics Letters. 59(11). 1329–1331. 16 indexed citations
18.
Jogai, B., et al.. (1990). Charge-quantization effects on current-voltage characteristics of AlGaAs/GaAs resonant tunneling diodes with spacer layers. Journal of Applied Physics. 68(7). 3425–3430. 15 indexed citations
19.
Jogai, B., et al.. (1988). Sensitivity of the absorption edge to applied electric fields in GaAs-Ga1−xAlxAs superlattices. Physical review. B, Condensed matter. 38(2). 1251–1254. 1 indexed citations
20.
Jogai, B., et al.. (1986). Frequency and power limit of quantum well oscillators. Applied Physics Letters. 48(15). 1003–1005. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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