F. Scholz

10.9k total citations · 1 hit paper
471 papers, 8.4k citations indexed

About

F. Scholz is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, F. Scholz has authored 471 papers receiving a total of 8.4k indexed citations (citations by other indexed papers that have themselves been cited), including 285 papers in Atomic and Molecular Physics, and Optics, 266 papers in Condensed Matter Physics and 263 papers in Electrical and Electronic Engineering. Recurrent topics in F. Scholz's work include GaN-based semiconductor devices and materials (260 papers), Semiconductor Quantum Structures and Devices (257 papers) and Semiconductor materials and devices (106 papers). F. Scholz is often cited by papers focused on GaN-based semiconductor devices and materials (260 papers), Semiconductor Quantum Structures and Devices (257 papers) and Semiconductor materials and devices (106 papers). F. Scholz collaborates with scholars based in Germany, United States and France. F. Scholz's co-authors include A. Hangleiter, J. Off, V. Härle, Jin Seo Im, H. Kollmer, C. Geng, A. Sohmer, H. Schweizer, K. Thonke and Thomas Wunderer and has published in prestigious journals such as Physical Review Letters, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

F. Scholz

459 papers receiving 8.1k citations

Hit Papers

Reduction of oscillator s... 1998 2026 2007 2016 1998 100 200 300 400 500
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
    1998 545 citations J. Off, F. Scholz et al. profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
F. Scholz 5.0k 4.5k 3.9k 3.1k 2.1k 471 8.4k
D. Hommel 4.1k 0.8× 5.2k 1.2× 4.5k 1.1× 4.8k 1.5× 2.1k 1.0× 558 9.6k
A. Trampert 6.0k 1.2× 3.8k 0.8× 3.3k 0.8× 5.7k 1.8× 3.9k 1.9× 369 10.3k
J. Massies 6.2k 1.3× 5.9k 1.3× 4.7k 1.2× 3.6k 1.1× 2.9k 1.4× 415 10.5k
B. Daudin 5.7k 1.2× 2.8k 0.6× 2.1k 0.5× 3.4k 1.1× 2.7k 1.3× 321 7.4k
O. Brandt 7.9k 1.6× 4.2k 0.9× 3.6k 0.9× 5.8k 1.9× 4.4k 2.1× 380 11.4k
F. A. Ponce 8.2k 1.6× 4.0k 0.9× 5.3k 1.4× 5.5k 1.8× 3.8k 1.8× 360 12.3k
Yoshinobu Aoyagi 2.1k 0.4× 2.6k 0.6× 3.6k 0.9× 2.7k 0.9× 1.4k 0.6× 328 6.7k
T. D. Moustakas 6.4k 1.3× 2.7k 0.6× 3.5k 0.9× 4.3k 1.4× 3.2k 1.5× 224 9.0k
E. Monroy 6.4k 1.3× 3.3k 0.7× 3.3k 0.8× 3.8k 1.2× 4.2k 2.0× 347 9.3k
Russell D. Dupuis 5.8k 1.2× 5.4k 1.2× 6.2k 1.6× 3.2k 1.0× 3.2k 1.5× 510 11.0k

Countries citing papers authored by F. Scholz

Since Specialization
Citations

This map shows the geographic impact of F. Scholz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Scholz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Scholz more than expected).

Fields of papers citing papers by F. Scholz

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Scholz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Scholz. The network helps show where F. Scholz may publish in the future.

Co-authorship network of co-authors of F. Scholz

This figure shows the co-authorship network connecting the top 25 collaborators of F. Scholz. A scholar is included among the top collaborators of F. Scholz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Scholz. F. Scholz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Scholz, F., et al.. (2023). Highly Sensitive Hydrogen Sulfide Sensor Based on GaN/GaInN Heterostructure. physica status solidi (a). 220(16). 1 indexed citations
2.
Thonke, K., et al.. (2019). Functionalized GaN/GaInN heterostructures for hydrogen sulfide sensing. Japanese Journal of Applied Physics. 58(SC). SC1028–SC1028. 6 indexed citations
3.
Langer, Torsten, H. Jönen, H. Bremers, et al.. (2015). Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells. physica status solidi (b). 253(1). 133–139. 19 indexed citations
4.
Biskupek, Johannes, Jannik C. Meyer, Simon Kurasch, et al.. (2015). Bottom-up formation of robust gold carbide. Scientific Reports. 5(1). 8891–8891. 14 indexed citations
5.
Wang, Junjun, et al.. (2015). Internal quantum efficiency and carrier injection efficiency of c‐plane, and InGaN/GaN‐based light‐emitting diodes. physica status solidi (b). 253(1). 174–179. 11 indexed citations
6.
Dinh, Duc V., Mahbub Akhter, Grzegorz Kozłowski, et al.. (2015). Semipolar (112) InGaN light‐emitting diodes grown on chemically–mechanically polished GaN templates. physica status solidi (a). 212(10). 2196–2200. 18 indexed citations
7.
Fikry, Mohamed, T. Aschenbrenner, Marco Schowalter, et al.. (2014). GaN tubes with coaxial non‐ and semipolar GaInN quantum wells. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 11(3-4). 648–651. 5 indexed citations
8.
Jetter, Michael, et al.. (2012). Differential phase contrast 2.0—Opening new “fields” for an established technique. Ultramicroscopy. 117. 7–14. 79 indexed citations
9.
Lazarev, Sergey, M. Barchuk, Kamran Forghani, et al.. (2012). Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system. Journal of Applied Crystallography. 46(1). 120–127. 13 indexed citations
10.
Singer, W., J. Iversen, Gary L. Kreps, et al.. (2011). Advances in Large Grain Resonators for the European XFEL. AIP conference proceedings. 13–24. 5 indexed citations
11.
Scholz, F., Thomas Wunderer, Martin Feneberg, et al.. (2010). GaInN‐based LED structures on selectively grown semi‐polar crystal facets. physica status solidi (a). 207(6). 1407–1413. 20 indexed citations
12.
Linder, N., Christian Karnutsch, W. Schmid, et al.. (2004). 900 mW continuous wave operation of AlInGaP tapered lasers and superluminescent diodes at 640 nm. Conference on Lasers and Electro-Optics. 1. 5 indexed citations
13.
Schömig, H., S. Halm, A. Forchel, et al.. (2004). Probing Individual Localization Centers in anInGaN/GaNQuantum Well. Physical Review Letters. 92(10). 106802–106802. 128 indexed citations
14.
Scholz, F., et al.. (2002). Investigations about series resistance of MOVPE grown GaN laser structures. Journal of Crystal Growth. 248. 507–512. 1 indexed citations
15.
Kita, Takashi, K. Yamashita, T. Nishino, et al.. (2000). Cooling Process of Hot Excitons in Ordered Ga0.5In0.5P. Japanese Journal of Applied Physics. 39(S1). 328–328. 2 indexed citations
16.
Wirth, R., et al.. (1998). Valence-band splitting and band-gap reduction in ordered GaInAs/InP. Journal of Applied Physics. 83(11). 6196–6198. 8 indexed citations
17.
Scholz, F., A. Hangleiter, H. Schweizer, & M. H. Pilkuhn. (1997). Ordering in GaInP: epitaxy, basic characteristics and device relevance. III-Vs Review. 10(4). 38–42. 2 indexed citations
18.
Geiger, M., et al.. (1996). Fabrication and investigation of nanostructures and their application in new laser devices. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(6). 4058–4061. 6 indexed citations
19.
Scholz, F., James C. M. Hwang, & D.K. Schroder. (1988). Low frequency noise and DLTS as semiconductor device characterization tools. Solid-State Electronics. 31(2). 205–217. 62 indexed citations
20.
Scholz, F.. (1968). Einfluß der Rohrreihenzahl auf den Druckverlust und Wärmeübergang von Rohrbündeln bei hohen Reynolds‐Zahlen. Chemie Ingenieur Technik. 40(20). 988–995. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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