F. Scholz

10.9k total citations · 1 hit paper
471 papers, 8.4k citations indexed

About

F. Scholz is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, F. Scholz has authored 471 papers receiving a total of 8.4k indexed citations (citations by other indexed papers that have themselves been cited), including 285 papers in Atomic and Molecular Physics, and Optics, 266 papers in Condensed Matter Physics and 263 papers in Electrical and Electronic Engineering. Recurrent topics in F. Scholz's work include GaN-based semiconductor devices and materials (260 papers), Semiconductor Quantum Structures and Devices (257 papers) and Semiconductor materials and devices (106 papers). F. Scholz is often cited by papers focused on GaN-based semiconductor devices and materials (260 papers), Semiconductor Quantum Structures and Devices (257 papers) and Semiconductor materials and devices (106 papers). F. Scholz collaborates with scholars based in Germany, United States and France. F. Scholz's co-authors include A. Hangleiter, J. Off, V. Härle, Jin Seo Im, H. Kollmer, C. Geng, A. Sohmer, H. Schweizer, K. Thonke and Thomas Wunderer and has published in prestigious journals such as Physical Review Letters, Nano Letters and Physical review. B, Condensed matter.

In The Last Decade

F. Scholz

459 papers receiving 8.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells

1998 545 citations J. Off, F. Scholz et al. Physical review. B, Condensed matter profile →

Peers

Countries citing papers authored by F. Scholz

Since Specialization

Citations

This map shows the geographic impact of F. Scholz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Scholz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Scholz more than expected).

Fields of papers citing papers by F. Scholz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Scholz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Scholz. The network helps show where F. Scholz may publish in the future.

Co-authorship network of co-authors of F. Scholz

This figure shows the co-authorship network connecting the top 25 collaborators of F. Scholz. A scholar is included among the top collaborators of F. Scholz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Scholz. F. Scholz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Highly Sensitive Hydrogen Sulfide Sensor Based on GaN/GaInN Heterostructure 2023 ·physica status solidi (a) ·(unknown), F. Scholz	1
2	Functionalized GaN/GaInN heterostructures for hydrogen sulfide sensing 2019 ·Japanese Journal of Applied Physics ·(unknown), (unknown), K. Thonke, F. Scholz	6
3	Radiative and nonradiative recombination mechanisms in nonpolar and semipolar GaInN/GaN quantum wells 2015 ·physica status solidi (b) ·Torsten Langer, (unknown), (unknown), H. Jönen, H. Bremers, U. Rossów, Tobias Meisch, F. Scholz, A. Hangleiter	19
4	Internal quantum efficiency and carrier injection efficiency of c‐plane, and InGaN/GaN‐based light‐emitting diodes 2015 ·physica status solidi (b) ·Junjun Wang, Tobias Meisch, (unknown), (unknown), F. Scholz	11
5	Effects of miscut of prestructured sapphire substrates and MOVPE growth conditions on (112¯2) oriented GaN 2014 ·Journal of Crystal Growth ·(unknown), Tobias Meisch, (unknown), F. Scholz	9
6	(20$ \bar 2 $1) MOVPE and HVPE GaN grown on 2″ patterned sapphire substrates 2014 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Tobias Meisch, (unknown), Martin Klein, F. Scholz	10
7	Advances in Large Grain Resonators for the European XFEL 2011 ·AIP conference proceedings ·W. Singer, (unknown), J. Iversen, Gary L. Kreps, A. Matheisen, X. Singer, K. Twarowski, H. Weise, M. Pekeler, F. Scholz, (unknown), (unknown)	5
8	Efficient 350 nm LEDs on low edge threading dislocation density AlGaN buffer layers 2011 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown), T. Passow, W. Pletschen, M. Kunzer, Lutz Kirste, Kamran Forghani, F. Scholz, Oliver Klein, Ute Kaiser, K. Köhler, J. Wagner	2
9	900 mW continuous wave operation of AlInGaP tapered lasers and superluminescent diodes at 640 nm 2004 ·Conference on Lasers and Electro-Optics ·N. Linder, (unknown), Christian Karnutsch, W. Schmid, (unknown), K. Streubel, (unknown), H. Schweizer, F. Scholz	5
10	Investigations about series resistance of MOVPE grown GaN laser structures 2002 ·Journal of Crystal Growth ·F. Scholz, (unknown), (unknown), (unknown), H. Schweizer	1
11	Cooling Process of Hot Excitons in Ordered Ga_0.5In_0.5P 2000 ·Japanese Journal of Applied Physics ·Takashi Kita, (unknown), K. Yamashita, T. Nishino, C. Geng, F. Scholz, H. Schweizer	2
12	High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition 1999 ·Physical review. B, Condensed matter ·F. Binet, J.-Y. Duboz, J. Off, F. Scholz	89
13	Short-channel AlGaN/GaN HEMTs with 70 nm T-gate 1999 ·Electronics Letters ·(unknown), H. Gräbeldinger, Barbara Kühn, F. Scholz, (unknown), Manfred Berroth, I. Daumiller, (unknown), E. Kohn, H. Schweizer	6
14	Valence-band splitting and band-gap reduction in ordered GaInAs/InP 1998 ·Journal of Applied Physics ·R. Wirth, (unknown), M. Geiger, (unknown), F. Scholz, A. Hangleiter	8
15	Ordering in GaInP: epitaxy, basic characteristics and device relevance 1997 ·III-Vs Review ·F. Scholz, A. Hangleiter, H. Schweizer, M. H. Pilkuhn	2
16	Edge-on micro-Raman assessment of trigonal modes in partially ordered GaInP2 1996 ·Physical review. B, Condensed matter ·N. Mestres, F. Alsina, J. Pascual, Jean‐Marie Bluet, J. Camassel, C. Geng, F. Scholz	16
17	Fabrication and investigation of nanostructures and their application in new laser devices 1996 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·(unknown), (unknown), M. Geiger, (unknown), F. Scholz, H. Schweizer	6
18	ESPRIT MORSE: research for novel metal-organic precursors 1993 ·Materials Science and Engineering B ·F. Scholz	1
19	Optically detected microwave-induced impact ionization of ytterbium bound excitons in InP 1991 ·Applied Physics Letters ·(unknown), M. Godlewski, (unknown), T. Gregorkiewicz, C.A.J. Ammerlaan, J. Weber, M. Moser, F. Scholz	19
20	Einfluß der Rohrreihenzahl auf den Druckverlust und Wärmeübergang von Rohrbündeln bei hohen Reynolds‐Zahlen 1968 ·Chemie Ingenieur Technik ·F. Scholz	4

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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