F. Schulze

999 total citations
26 papers, 770 citations indexed

About

F. Schulze is a scholar working on Condensed Matter Physics, Mechanics of Materials and Electrical and Electronic Engineering. According to data from OpenAlex, F. Schulze has authored 26 papers receiving a total of 770 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 14 papers in Mechanics of Materials and 10 papers in Electrical and Electronic Engineering. Recurrent topics in F. Schulze's work include GaN-based semiconductor devices and materials (23 papers), Metal and Thin Film Mechanics (14 papers) and Ga2O3 and related materials (9 papers). F. Schulze is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Metal and Thin Film Mechanics (14 papers) and Ga2O3 and related materials (9 papers). F. Schulze collaborates with scholars based in Germany and United States. F. Schulze's co-authors include A. Krost, A. Dadgar, J. Bläsing, A. Diez, Thomas Hempel, Peter Veit, I. Daumiller, M. Kunze, Martin Neuburger and E. Kohn and has published in prestigious journals such as Applied Physics Letters, Thin Solid Films and Journal of Crystal Growth.

In The Last Decade

F. Schulze

24 papers receiving 721 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Schulze Germany 14 651 295 292 256 188 26 770
Abdul Kadir India 15 293 0.5× 116 0.4× 161 0.6× 91 0.4× 136 0.7× 57 508
Monica Hansen United States 6 449 0.7× 217 0.7× 276 0.9× 60 0.2× 173 0.9× 10 621
Jordi Llobet Spain 16 122 0.2× 515 1.7× 71 0.2× 45 0.2× 273 1.5× 48 735
I. Belabbas Algeria 13 287 0.4× 246 0.8× 87 0.3× 174 0.7× 200 1.1× 46 484
Hongqiang Lu United States 10 202 0.3× 199 0.7× 139 0.5× 61 0.2× 154 0.8× 15 374
Tilo Finger Germany 8 251 0.4× 104 0.4× 141 0.5× 78 0.3× 146 0.8× 9 358
Hideaki Matsuyama Japan 8 398 0.6× 339 1.1× 159 0.5× 84 0.3× 79 0.4× 12 506
Yanbo Bai China 9 99 0.2× 222 0.8× 83 0.3× 86 0.3× 73 0.4× 23 545
M. Wurtele United States 6 175 0.3× 150 0.5× 105 0.4× 19 0.1× 109 0.6× 12 472
Janusz Nowak Poland 8 639 1.0× 208 0.7× 1.2k 4.2× 38 0.1× 825 4.4× 46 1.8k

Countries citing papers authored by F. Schulze

Since Specialization
Citations

This map shows the geographic impact of F. Schulze's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Schulze with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Schulze more than expected).

Fields of papers citing papers by F. Schulze

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Schulze. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Schulze. The network helps show where F. Schulze may publish in the future.

Co-authorship network of co-authors of F. Schulze

This figure shows the co-authorship network connecting the top 25 collaborators of F. Schulze. A scholar is included among the top collaborators of F. Schulze based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Schulze. F. Schulze is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Döring, Johanna, et al.. (2020). Spatial Differentiation of Physical and Chemical Soil Parameters under Integrated, Organic, and Biodynamic Viticulture. Plants. 9(10). 1361–1361. 10 indexed citations
2.
Schulze, F.. (2018). Die Reichskreise im Dreißigjährigen Krieg. 1 indexed citations
3.
Schulze, F., A. Dadgar, A. Krtschil, et al.. (2008). MOVPE growth of blue InxGa1–xN/GaN LEDs on 150 mm Si(001). Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 2238–2240. 2 indexed citations
4.
Schulze, F., A. Dadgar, F. Bertram, et al.. (2007). Blue light emitting diodes on Si(001) grown by MOVPE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(1). 41–44. 2 indexed citations
5.
Schulze, F., A. Dadgar, J. Bläsing, A. Diez, & A. Krost. (2006). Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrate. Applied Physics Letters. 88(12). 39 indexed citations
6.
Schulze, F., A. Dadgar, J. Bläsing, et al.. (2006). Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy. Journal of Crystal Growth. 289(2). 485–488. 27 indexed citations
7.
Fritsche, Uwe R., et al.. (2006). Sustainability standards for bioenergy. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 61 indexed citations
8.
Dadgar, A., Peter Veit, F. Schulze, et al.. (2006). MOVPE growth of GaN on Si – Substrates and strain. Thin Solid Films. 515(10). 4356–4361. 74 indexed citations
9.
Krost, A., et al.. (2005). Heteroepitaxy of GaN on Silicon: In Situ Measurements. Materials science forum. 483-485. 1051–1056. 1 indexed citations
10.
Neuburger, Martin, Tom Zimmermann, E. Kohn, et al.. (2005). Unstrained InAlN/GaN HEMT structure. 161–166. 7 indexed citations
11.
Krost, A., et al.. (2005). Simultaneous measurement of wafer curvature and true temperature during metalorganic growth of group‐III nitrides on silicon and sapphire. physica status solidi (b). 242(13). 2570–2574. 5 indexed citations
12.
Schulze, F., A. Dadgar, J. Bläsing, & A. Krost. (2004). GaN heteroepitaxy on Si(001). Journal of Crystal Growth. 272(1-4). 496–499. 12 indexed citations
13.
Krost, A., A. Dadgar, F. Schulze, et al.. (2004). In situ monitoring of the stress evolution in growing group-III-nitride layers. Journal of Crystal Growth. 275(1-2). 209–216. 37 indexed citations
14.
Dadgar, A., F. Schulze, K. Haberland, et al.. (2004). In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature. Journal of Crystal Growth. 272(1-4). 72–75. 38 indexed citations
15.
Schulze, F., J. Bläsing, A. Dadgar, & A. Krost. (2004). Exact determination of Indium incorporation in (In x Ga1– x N/GaN)-multiple quantum well structures by X-ray diffraction and -reflectivity and its impact on optical properties. Zeitschrift für Kristallographie - Crystalline Materials. 219(4). 191–194. 1 indexed citations
16.
Neuburger, Martin, Tom Zimmermann, E. Kohn, et al.. (2004). UNSTRAINED InAlN/GaN HEMT STRUCTURE. International Journal of High Speed Electronics and Systems. 14(3). 785–790. 35 indexed citations
17.
Schulze, F., J. Bläsing, A. Dadgar, & A. Krost. (2003). Time-delayed indium incorporation in ultrathin (InxGa1−xN/GaN) multiple quantum wells grown by metalorganic vapor phase epitaxy. Applied Physics Letters. 82(25). 4558–4560. 14 indexed citations
18.
Dadgar, A., M. Poschenrieder, O. Contreras, et al.. (2002). Bright, Crack-Free InGaN/GaN Light Emitters on Si(111). physica status solidi (a). 192(2). 308–313. 37 indexed citations
19.
Poschenrieder, M., F. Schulze, J. Bläsing, et al.. (2002). Bright blue to orange photoluminescence emission from high-quality InGaN/GaN multiple-quantum-wells on Si(111) substrates. Applied Physics Letters. 81(9). 1591–1593. 11 indexed citations
20.
Krost, A., J. Bläsing, F. Schulze, et al.. (2000). Nearly strain-free AlGaN on (0001) sapphire: X-ray measurements and a new crystallographic growth model. Journal of Crystal Growth. 221(1-4). 251–257. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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